Electron beam stimulated oxidation of carbon

Sidewall angle tuning in focused electron beam-induced processing

Structures fabricated using focused electron beam-induced deposition (FEBID) have sloped sidewalls because of the very nature of the deposition process. For applications this is highly undesirable, especially when neighboring structures are interconnected. A new technique combining FEBID and focused electron beam-induced etching (FEBIE) has been developed to fabricate structures with vertical sidewalls. The sidewalls of carbon FEBID structures have been modified by etching with water and it is shown, using transmission electron microscopy imaging, that the sidewall angle can be tuned from outward to inward by controlling the etch position on the sidewall. A surprising under-etching due to the emission of secondary electrons from the deposit was observed, which was not indicated by a simple model based on etching. An analytical model was developed to include continued etching once the deposit has been removed at the exposed pixel. At this stage the secondary electrons from the substrate then cause the adsorbed water molecules to become effective in etching the deposit from below, resulting in under-etched structures. The evolution of the sidewall angle during etching has also been experimentally observed in a scanning electron microscope by continuously monitoring the secondary electron detector signal.

Aligned Stacking of Nanopatterned 2D Materials for High-Resolution 3D Device Fabrication

Two-dimensional materials can be combined by placing individual layers on top of each other, so that they are bound only by their van der Waals interaction. The sequence of layers can be chosen arbitrarily, enabling an essentially atomic-level control of the material and thereby a wide choice of properties along one dimension. However, simultaneous control over the structure in the in-plane directions is so far still rather limited. Here, we combine spatially controlled modifications of 2D materials, using focused electron irradiation or electron beam induced etching, with the layer-by-layer assembly of van der Waals heterostructures. The presented assembly process makes it possible to structure each layer with an arbitrary pattern prior to the assembly into the heterostructure. Moreover, it enables a stacking of the layers with accurate lateral alignment, with an accuracy of currently 10 nm, under observation in an electron microscope. Together, this enables the fabrication of almost arbitrary 3D structures with highest spatial resolution.

A novel shaped-controlled fabrication of nanopore and its applications in quantum electronics

High-intensity (10⁷–10⁸ A m⁻²) electron beams can be used to fabricate nanoscale pores. This approach enables real-time observation of nanopore drilling and precise control of the diameter of the nanopore. Nevertheless, it is not suitable for tuning the nanopore’s sidewall shape. In this study, we demonstrate the use of low-intensity electron beams to fabricate nanopores on a silicon nitride (SiN_x) membrane. This technique allows the precise adjustment of the nanopore dimension and the shaping of its three-dimensional (3D) nanostructure. The 3D structures of the nanopore were evaluated by electron tomography, and series of oblique images were used in reconstructing the 3D images of nanopores using a weighted back-projection method. The sidewall shape of the nanopore was observed at different electron-beam conditions, and the formation mechanism was elucidated based on these results. The nanopore fabricated with this technique can be used as a template to develop electronics at the nanoscale based on which a quantum-dot device can be prepared with a simple evaporation process. The measured results show that the device can resolve well-defined electronic states that are characteristic for the behaviors of the quantum-dot device.

Electron beam induced etching of carbon nanotubes enhanced by secondary electrons in oxygen

Multi-walled carbon nanotubes (CNTs) are subjected to electron-beam-induced etching (EBIE) in oxygen. The EBIE process is observed in situ by environmental transmission electron microscopy. The partial pressure of oxygen (10 and 100 Pa), energy of the primary electrons (80 and 200 keV), and environment of the CNTs (suspended or supported on a silicon nitride membrane) are investigated as factors affecting the etching rate. The EBIE rate of CNTs was markedly promoted by the effects of secondary electrons that were emitted from a silicon nitride membrane under irradiation by primary electrons. Membrane supported CNTs can be cut by EBIE with a spatial accuracy better than 3 nm, and a nanogap of 2 nm can be successfully achieved between the ends of two suspended CNTs.

Electron-beam induced nano-etching of suspended graphene

Besides its interesting physical properties, graphene as a two-dimensional lattice of carbon atoms promises to realize devices with exceptional electronic properties, where freely suspended graphene without contact to any substrate is the ultimate, truly two-dimensional system. The practical realization of nano-devices from suspended graphene, however, relies heavily on finding a structuring method which is minimally invasive. Here, we report on the first electron beam-induced nano-etching of suspended graphene and demonstrate high-resolution etching down to ~7 nm for line-cuts into the monolayer graphene. We investigate the structural quality of the etched graphene layer using two-dimensional (2D) Raman maps and demonstrate its high electronic quality in a nano-device: A 25 nm-wide suspended graphene nanoribbon (GNR) that shows a transport gap with a corresponding energy of ~60 meV. This is an important step towards fast and reliable patterning of suspended graphene for future ballistic transport, nano-electronic and nano-mechanical devices.

Insights into the growth of bismuth nanoparticles on 2D structured BiOCl photocatalysts: an in situ TEM investigation

The formation and growth of bismuth nanoparticles onto BiOCl have been directly observed and characterized using a transmission electron microscope.

Dynamic surface site activation: a rate limiting process in electron beam induced etching

We report a new mechanism that limits the rate of electron beam induced etching (EBIE). Typically, the etch rate is assumed to scale directly with the precursor adsorbate dissociation rate. Here, we show that this is a special case, and that the rate can instead be limited by the concentration of active sites at the surface. Novel etch kinetics are expected if surface sites are activated during EBIE, and observed experimentally using the electron sensitive material ultra nanocrystalline diamond (UNCD). In practice, etch kinetics are of interest because they affect resolution, throughput, proximity effects, and the topography of nanostructures and nanostructured devices fabricated by EBIE.

Applications of Carbon Nanotubes for Lithium Ion Battery Anodes

Carbon nanotubes (CNTs) have displayed great potential as anode materials for lithium ion batteries (LIBs) due to their unique structural, mechanical, and electrical properties. The measured reversible lithium ion capacities of CNT-based anodes are considerably improved compared to the conventional graphite-based anodes. Additionally, the opened structure and enriched chirality of CNTs can help to improve the capacity and electrical transport in CNT-based LIBs. Therefore, the modification of CNTs and design of CNT structure provide strategies for improving the performance of CNT-based anodes. CNTs could also be assembled into free-standing electrodes without any binder or current collector, which will lead to increased specific energy density for the overall battery design. In this review, we discuss the mechanism of lithium ion intercalation and diffusion in CNTs, and the influence of different structures and morphologies on their performance as anode materials for LIBs.

Electron beam induced chemical dry etching and imaging in gaseous NH3 environments

We report the use of ammonia (NH(3)) vapor as a new precursor for nanoscale electron beam induced etching (EBIE) of carbon, and an efficient imaging medium for environmental scanning electron microscopy (ESEM). Etching is demonstrated using amorphous carbonaceous nanowires grown by electron beam induced deposition (EBID). It is ascribed to carbon volatilization by hydrogen radicals generated by electron dissociation of NH(3) adsorbates. The volatilization process is also effective at preventing the buildup of residual hydrocarbon impurities that often compromise EBIE, EBID and electron imaging. We also show that ammonia is a more efficient electron imaging medium than H(2)O, which up to now has been the most commonly used ESEM imaging gas.

Fabrication and characterization of a solid-state nanopore with self-aligned carbon nanoelectrodes for molecular detection

Stochastic molecular sensors based on resistive pulse nanopore modalities are envisioned as facile DNA sequencers. However, recent advances in nanotechnology fabrication have highlighted promising alternative detection mechanisms with higher sensitivity and potential single-base resolution. In this paper we present the novel self-aligned fabrication of a solid-state nanopore device with integrated transverse graphene-like carbon nanoelectrodes for polyelectrolyte molecular detection. The electrochemical transduction mechanism is characterized and found to result primarily from thermionic emission between the two transverse electrodes. Response of the nanopore to Lambda dsDNA and short (16-mer) ssDNA is demonstrated and distinguished.

Nanopore formation by low-energy focused electron beam machining

The fabrication of nanopores in thin silicon nitride and aluminum oxide membranes by water vapor assisted, low-energy (0.2-20 kV) electron beam machining using a scanning electron microscope (SEM) is described. Using this technique, pores with diameters ranging in size from < 5 to 20 nm are easily formed. The nanopores are characterized by SEM, transmission electron microscopy (TEM) and atomic force microscopy (AFM). The mechanism of etching is briefly discussed.