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Equilibrium crystal shape of GaAs and InAs considering surface vibration and new (111)B reconstruction: ab-initio thermodynamics. Sci Rep 2019; 9:1127. [PMID: 30718922 PMCID: PMC6361998 DOI: 10.1038/s41598-018-37910-y] [Citation(s) in RCA: 10] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 08/08/2018] [Accepted: 12/17/2018] [Indexed: 11/16/2022] Open
Abstract
This work reports on the theoretical equilibrium crystal shapes of GaAs and InAs as a function of temperature and pressure, taking into account the contribution of the surface vibration, using ab-initio thermodynamic calculations. For this purpose, new (111)B reconstructions, which are energetically stable at a high temperature, are suggested. It was found that there was a feasible correspondence between the calculated equilibrium shapes and the experimental shapes, which implied that the previous experimental growth was performed under conditions that were close to equilibrium. In this study, GaAs and InAs were selected as prototype compound semiconductors, but the developed calculation methodology can also be applied to other III–V compound semiconductor materials.
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Biccari F, Boschetti A, Pettinari G, La China F, Gurioli M, Intonti F, Vinattieri A, Sharma M, Capizzi M, Gerardino A, Businaro L, Hopkinson M, Polimeni A, Felici M. Site-Controlled Single-Photon Emitters Fabricated by Near-Field Illumination. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2018; 30:e1705450. [PMID: 29611235 DOI: 10.1002/adma.201705450] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/20/2017] [Revised: 02/07/2018] [Indexed: 06/08/2023]
Abstract
Many of the most advanced applications of semiconductor quantum dots (QDs) in quantum information technology require a fine control of the QDs' position and confinement potential, which cannot be achieved with conventional growth techniques. Here, a novel and versatile approach for the fabrication of site-controlled QDs is presented. Hydrogen incorporation in GaAsN results in the formation of N-2H and N-2H-H complexes, which neutralize all the effects of N on GaAs, including the N-induced large reduction of the bandgap energy. Starting from a fully hydrogenated GaAs/GaAsN:H/GaAs quantum well, the NH bonds located within the light spot generated by a scanning near-field optical microscope tip are broken, thus obtaining site-controlled GaAsN QDs surrounded by a barrier of GaAsN:H (laterally) and GaAs (above and below). By adjusting the laser power density and exposure time, the optical properties of the QDs can be finely controlled and optimized, tuning the quantum confinement energy over more than 100 meV and resulting in the observation of single-photon emission from both the exciton and biexciton recombinations. This novel fabrication technique reaches a position accuracy <100 nm and it can easily be applied to the realization of more complex nanostructures.
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Affiliation(s)
- Francesco Biccari
- Department of Physics and Astronomy, and LENS, University of Florence, Via Sansone 1, I-50019, Sesto Fiorentino (FI), Italy
| | - Alice Boschetti
- Department of Physics and Astronomy, and LENS, University of Florence, Via Sansone 1, I-50019, Sesto Fiorentino (FI), Italy
| | - Giorgio Pettinari
- National Research Council, Institute for Photonics and Nanotechnologies (IFN-CNR), Via Cineto Romano 42, I-00156, Rome, Italy
| | - Federico La China
- Department of Physics and Astronomy, and LENS, University of Florence, Via Sansone 1, I-50019, Sesto Fiorentino (FI), Italy
| | - Massimo Gurioli
- Department of Physics and Astronomy, and LENS, University of Florence, Via Sansone 1, I-50019, Sesto Fiorentino (FI), Italy
| | - Francesca Intonti
- Department of Physics and Astronomy, and LENS, University of Florence, Via Sansone 1, I-50019, Sesto Fiorentino (FI), Italy
| | - Anna Vinattieri
- Department of Physics and Astronomy, and LENS, University of Florence, Via Sansone 1, I-50019, Sesto Fiorentino (FI), Italy
| | - MayankShekhar Sharma
- Department of Physics and CNISM, Sapienza-University of Rome, Piazzale Aldo Moro 5, I-00185, Roma, Italy
| | - Mario Capizzi
- Department of Physics and CNISM, Sapienza-University of Rome, Piazzale Aldo Moro 5, I-00185, Roma, Italy
| | - Annamaria Gerardino
- National Research Council, Institute for Photonics and Nanotechnologies (IFN-CNR), Via Cineto Romano 42, I-00156, Rome, Italy
| | - Luca Businaro
- National Research Council, Institute for Photonics and Nanotechnologies (IFN-CNR), Via Cineto Romano 42, I-00156, Rome, Italy
| | - Mark Hopkinson
- Department of Electronic and Electrical Engineering, University of Sheffield, Sheffield, S3 3JD, UK
| | - Antonio Polimeni
- Department of Physics and CNISM, Sapienza-University of Rome, Piazzale Aldo Moro 5, I-00185, Roma, Italy
| | - Marco Felici
- Department of Physics and CNISM, Sapienza-University of Rome, Piazzale Aldo Moro 5, I-00185, Roma, Italy
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Halder NN, Kelrich A, Cohen S, Ritter D. Pure wurtzite GaP nanowires grown on zincblende GaP substrates by selective area vapor liquid solid epitaxy. NANOTECHNOLOGY 2017; 28:465603. [PMID: 28885983 DOI: 10.1088/1361-6528/aa8b60] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.1] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/07/2023]
Abstract
We report on the growth of single phase wurtzite (WZ) GaP nanowires (NWs) on GaP (111) B substrates by metal organic molecular beam epitaxy following the selective area vapor-liquid-solid (SA-VLS) approach. During the SA-VLS process, precursors are supplied directly to the NW sidewalls, and the short diffusion length of gallium (or its precursors) does not significantly limit axial growth. Transmission electron microscopy (TEM) images reveal that no stacking faults are present along a 600 nm long NW. The lattice constants of the pure WZ GaP obtained from the TEM images agree with values determined previously by x-ray diffraction from non-pure NW ensembles.
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Affiliation(s)
- Nripendra N Halder
- Electrical Engineering Faculty, Technion Israel Institute of Technology, Haifa 32000, Israel
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Zhang J, Lu S, Chattaraj S, Madhukar A. Triggered single photon emission up to 77K from ordered array of surface curvature-directed mesa-top GaAs/InGaAs single quantum dots. OPTICS EXPRESS 2016; 24:29955-29962. [PMID: 28059380 DOI: 10.1364/oe.24.029955] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/06/2023]
Abstract
We demonstrate triggered single photon emission up to 77K from an ordered 5x8 array of InGaAs single quantum dots (SQDs). The SQDs are grown selectively on patterned mesa tops utilizing substrate-encoded size-reducing epitaxy (SESRE). It exploits designed surface-curvature stress gradients to preferentially direct atom migration from mesa sidewalls to the top during growth. The emission from the SQDs exhibits a g(2)(0) of 0.19 ± 0.03 at 8K and decent emission spectral uniformity (standard deviation <1% of emission wavelength). The SESRE QDs are inherently compatible with on-chip integrated light manipulation elements, thereby enabling a path towards integrated nanophotonic systems for quantum information processing.
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Metaferia W, Dev A, Kataria H, Junesand C, Sun YT, Anand S, Tommila J, Pozina G, Hultman L, Guina M, Niemi T, Lourdudoss S. High quality InP nanopyramidal frusta on Si. CrystEngComm 2014. [DOI: 10.1039/c3ce42231c] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022]
Abstract
Octagonal nanopyramidal InP frusta grown selectively on silicon.
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Affiliation(s)
| | - Apurba Dev
- Laboratory of Semiconductor Materials
- KTH
- 164 40 Kista, Sweden
| | | | - Carl Junesand
- Laboratory of Semiconductor Materials
- KTH
- 164 40 Kista, Sweden
| | - Yan-Ting Sun
- Laboratory of Semiconductor Materials
- KTH
- 164 40 Kista, Sweden
| | | | - Juha Tommila
- Optoelectronics Research Centre
- Tampere University of Technology
- FIN-33101 Tampere, Finland
| | - Galia Pozina
- Thin Film Physics Division
- Department of Physics (IFM)
- Linköping University
- S-581 83 Linköping, Sweden
| | - Lars Hultman
- Thin Film Physics Division
- Department of Physics (IFM)
- Linköping University
- S-581 83 Linköping, Sweden
| | - Mircea Guina
- Optoelectronics Research Centre
- Tampere University of Technology
- FIN-33101 Tampere, Finland
| | - Tapio Niemi
- Optoelectronics Research Centre
- Tampere University of Technology
- FIN-33101 Tampere, Finland
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