Scanning gate imaging of quantum dots in 1D ultra-thin InAs/InP nanowires

Quantum Lissajous Scars

A quantum scar-an enhancement of a quantum probability density in the vicinity of a classical periodic orbit-is a fundamental phenomenon connecting quantum and classical mechanics. Here we demonstrate that some of the eigenstates of the perturbed two-dimensional anisotropic (elliptic) harmonic oscillator are strongly scarred by the Lissajous orbits of the unperturbed classical counterpart. In particular, we show that the occurrence and geometry of these quantum Lissajous scars are connected to the anisotropy of the harmonic confinement, but unlike the classical Lissajous orbits the scars survive under a small perturbation of the potential. This Lissajous scarring is caused by the combined effect of the quantum (near) degeneracies in the unperturbed system and the localized character of the perturbation. Furthermore, we discuss experimental schemes to observe this perturbation-induced scarring.

Strong quantum scarring by local impurities

We discover and characterise strong quantum scars, or quantum eigenstates resembling classical periodic orbits, in two-dimensional quantum wells perturbed by local impurities. These scars are not explained by ordinary scar theory, which would require the existence of short, moderately unstable periodic orbits in the perturbed system. Instead, they are supported by classical resonances in the unperturbed system and the resulting quantum near-degeneracy. Even in the case of a large number of randomly scattered impurities, the scars prefer distinct orientations that extremise the overlap with the impurities. We demonstrate that these preferred orientations can be used for highly efficient transport of quantum wave packets across the perturbed potential landscape. Assisted by the scars, wave-packet recurrences are significantly stronger than in the unperturbed system. Together with the controllability of the preferred orientations, this property may be very useful for quantum transport applications.

The electronic transport of top subband and disordered sea in an InAs nanowire in the presence of a mobile gate

We performed measurements at helium temperatures of the electronic transport in an InAs quantum wire (R(wire) ∼ 30 kΩ) in the presence of a charged tip of an atomic force microscope serving as a mobile gate. The period and the amplitude of the observed quasi-periodic oscillations are investigated in detail as a function of electron concentration in the linear and non-linear regime. We demonstrate the influence of the tip-to-sample distance on the ability to locally affect the top subband electrons as well as the electrons in the disordered sea. Furthermore, we introduce a new method of detection of the subband occupation in an InAs wire, which allows us to evaluate the number of electrons in the conductive band of the wire.