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Liu Z, Zhang Q, Xie D, Zhang M, Li X, Zhong H, Li G, He M, Shang D, Wang C, Gu L, Yang G, Jin K, Ge C. Interface-type tunable oxygen ion dynamics for physical reservoir computing. Nat Commun 2023; 14:7176. [PMID: 37935751 PMCID: PMC10630289 DOI: 10.1038/s41467-023-42993-x] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 06/18/2023] [Accepted: 10/26/2023] [Indexed: 11/09/2023] Open
Abstract
Reservoir computing can more efficiently be used to solve time-dependent tasks than conventional feedforward network owing to various advantages, such as easy training and low hardware overhead. Physical reservoirs that contain intrinsic nonlinear dynamic processes could serve as next-generation dynamic computing systems. High-efficiency reservoir systems require nonlinear and dynamic responses to distinguish time-series input data. Herein, an interface-type dynamic transistor gated by an Hf0.5Zr0.5O2 (HZO) film was introduced to perform reservoir computing. The channel conductance of Mott material La0.67Sr0.33MnO3 (LSMO) can effectively be modulated by taking advantage of the unique coupled property of the polarization process and oxygen migration in hafnium-based ferroelectrics. The large positive value of the oxygen vacancy formation energy and negative value of the oxygen affinity energy resulted in the spontaneous migration of accumulated oxygen ions in the HZO films to the channel, leading to the dynamic relaxation process. The modulation of the channel conductance was found to be closely related to the current state, identified as the origin of the nonlinear response. In the time series recognition and prediction tasks, the proposed reservoir system showed an extremely low decision-making error. This work provides a promising pathway for exploiting dynamic ion systems for high-performance neural network devices.
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Affiliation(s)
- Zhuohui Liu
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, 100190, Beijing, China
- College of Materials Science and Opto-Electronic Technology, University of Chinese Academy of Sciences, 100049, Beijing, China
| | - Qinghua Zhang
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, 100190, Beijing, China
- Yangtze River Delta Physics Research Center Co. Ltd., 213300, Liyang, China
| | - Donggang Xie
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, 100190, Beijing, China
- School of Physical Sciences, University of Chinese Academy of Science, 100049, Beijing, China
| | - Mingzhen Zhang
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, 100190, Beijing, China
- School of Physical Sciences, University of Chinese Academy of Science, 100049, Beijing, China
| | - Xinyan Li
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, 100190, Beijing, China
- College of Materials Science and Opto-Electronic Technology, University of Chinese Academy of Sciences, 100049, Beijing, China
| | - Hai Zhong
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, 100190, Beijing, China
- School of Physics and Optoelectronics Engineering, Ludong University, 264025, Yantai, Shandong, China
| | - Ge Li
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, 100190, Beijing, China
- School of Physical Sciences, University of Chinese Academy of Science, 100049, Beijing, China
| | - Meng He
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, 100190, Beijing, China
| | - Dashan Shang
- Key Laboratory of Microelectronic Devices and Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, 100029, Beijing, China
| | - Can Wang
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, 100190, Beijing, China
- School of Physical Sciences, University of Chinese Academy of Science, 100049, Beijing, China
| | - Lin Gu
- Beijing National Center for Electron Microscopy and Laboratory of Advanced Materials, Department of Materials Science and Engineering, Tsinghua University, 100084, Beijing, China
| | - Guozhen Yang
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, 100190, Beijing, China
| | - Kuijuan Jin
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, 100190, Beijing, China.
- School of Physical Sciences, University of Chinese Academy of Science, 100049, Beijing, China.
| | - Chen Ge
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, 100190, Beijing, China.
- School of Physical Sciences, University of Chinese Academy of Science, 100049, Beijing, China.
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Han S, Xia CJ, Li M, Zhao XM, Zhang GQ, Li LB, Su YH, Fang QL. Interfacial electronic states and self-formed asymmetric Schottky contacts in polar α-In 2Se 3/Au contacts. Sci Rep 2023; 13:19228. [PMID: 37932366 PMCID: PMC10628281 DOI: 10.1038/s41598-023-46514-0] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 03/29/2023] [Accepted: 11/02/2023] [Indexed: 11/08/2023] Open
Abstract
In recent years, the two-dimensional (2D) semiconductor α-In2Se3 has great potential for applications in the fields of electronics and optoelectronics due to its spontaneous iron electrolysis properties. Through ab initio electronic structure calculations and quantum transport simulations, the interface properties and transport properties of α-In2Se3/Au contacts with different polarization directions are studied, and a two-dimensional α-In2Se3 asymmetric metal contact design is proposed. When α-In2Se3 is polarized upward, it forms an n-type Schottky contact with Au. While when α-In2Se3 is polarized downward, it forms a p-type Schottky contact with Au. More importantly, significant rectification effect is found in the asymmetric Au/α-In2Se3/Au field-effect transistor. The carrier transports under positive and negative bias voltages are found to be dominated by thermionic excitation and tunneling, respectively. These findings provide guidance for the further design of 2D α-In2Se3-based transistors.
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Affiliation(s)
- Sha Han
- School of Science, Xi'an Polytechnic University, Xi'an, 710048, Shaanxi, China
| | - Cai-Juan Xia
- School of Science, Xi'an Polytechnic University, Xi'an, 710048, Shaanxi, China.
- Engineering Research Center of Flexible Radiation Protection Technology, University of Shaanxi Province, Xi'an Polytechnic University, Xi'an, 710048, Shaanxi, China.
- Xi'an Key Laboratory of Nuclear Protection Textile Equipment Technology, Xi'an Polytechnic University, Xi'an, 710048, Shaanxi, China.
| | - Min Li
- School of Science, Xi'an Polytechnic University, Xi'an, 710048, Shaanxi, China
| | - Xu-Mei Zhao
- School of Science, Xi'an Polytechnic University, Xi'an, 710048, Shaanxi, China
| | - Guo-Qing Zhang
- School of Science, Xi'an Polytechnic University, Xi'an, 710048, Shaanxi, China
- Engineering Research Center of Flexible Radiation Protection Technology, University of Shaanxi Province, Xi'an Polytechnic University, Xi'an, 710048, Shaanxi, China
- Xi'an Key Laboratory of Nuclear Protection Textile Equipment Technology, Xi'an Polytechnic University, Xi'an, 710048, Shaanxi, China
| | - Lian-Bi Li
- School of Science, Xi'an Polytechnic University, Xi'an, 710048, Shaanxi, China
- Engineering Research Center of Flexible Radiation Protection Technology, University of Shaanxi Province, Xi'an Polytechnic University, Xi'an, 710048, Shaanxi, China
- Xi'an Key Laboratory of Nuclear Protection Textile Equipment Technology, Xi'an Polytechnic University, Xi'an, 710048, Shaanxi, China
| | - Yao-Heng Su
- School of Science, Xi'an Polytechnic University, Xi'an, 710048, Shaanxi, China
- Engineering Research Center of Flexible Radiation Protection Technology, University of Shaanxi Province, Xi'an Polytechnic University, Xi'an, 710048, Shaanxi, China
- Xi'an Key Laboratory of Nuclear Protection Textile Equipment Technology, Xi'an Polytechnic University, Xi'an, 710048, Shaanxi, China
| | - Qing-Long Fang
- School of Science, Xi'an Polytechnic University, Xi'an, 710048, Shaanxi, China.
- Engineering Research Center of Flexible Radiation Protection Technology, University of Shaanxi Province, Xi'an Polytechnic University, Xi'an, 710048, Shaanxi, China.
- Xi'an Key Laboratory of Nuclear Protection Textile Equipment Technology, Xi'an Polytechnic University, Xi'an, 710048, Shaanxi, China.
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3
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Xia W, Pei Z, Leng K, Zhu X. Research Progress in Rare Earth-Doped Perovskite Manganite Oxide Nanostructures. NANOSCALE RESEARCH LETTERS 2020; 15:9. [PMID: 31933031 PMCID: PMC6957627 DOI: 10.1186/s11671-019-3243-0] [Citation(s) in RCA: 15] [Impact Index Per Article: 3.8] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/23/2019] [Accepted: 12/27/2019] [Indexed: 05/12/2023]
Abstract
Perovskite manganites exhibit a broad range of structural, electronic, and magnetic properties, which are widely investigated since the discovery of the colossal magnetoresistance effect in 1994. As compared to the parent perovskite manganite oxides, rare earth-doped perovskite manganite oxides with a chemical composition of LnxA1-xMnO3 (where Ln represents rare earth metal elements such as La, Pr, Nd, A is divalent alkaline earth metal elements such as Ca, Sr, Ba) exhibit much diverse electrical properties due to that the rare earth doping leads to a change of valence states of manganese which plays a core role in the transport properties. There is not only the technological importance but also the need to understand the fundamental mechanisms behind the unusual magnetic and transport properties that attract enormous attention. Nowadays, with the rapid development of electronic devices toward integration and miniaturization, the feature sizes of the microelectronic devices based on rare earth-doped perovskite manganite are down-scaled into nanoscale dimensions. At nanoscale, various finite size effects in rare earth-doped perovskite manganite oxide nanostructures will lead to more interesting novel properties of this system. In recent years, much progress has been achieved on the rare earth-doped perovskite manganite oxide nanostructures after considerable experimental and theoretical efforts. This paper gives an overview of the state of art in the studies on the fabrication, structural characterization, physical properties, and functional applications of rare earth-doped perovskite manganite oxide nanostructures. Our review first starts with the short introduction of the research histories and the remarkable discoveries in the rare earth-doped perovskite manganites. In the second part, different methods for fabricating rare earth-doped perovskite manganite oxide nanostructures are summarized. Next, structural characterization and multifunctional properties of the rare earth-doped perovskite manganite oxide nanostructures are in-depth reviewed. In the following, potential applications of rare earth-doped perovskite manganite oxide nanostructures in the fields of magnetic memory devices and magnetic sensors, spintronic devices, solid oxide fuel cells, magnetic refrigeration, biomedicine, and catalysts are highlighted. Finally, this review concludes with some perspectives and challenges for the future researches of rare earth-doped perovskite manganite oxide nanostructures.
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Affiliation(s)
- Weiren Xia
- National Laboratory of Solid State Microstructures, School of Physics, Nanjing University, Nanjing, 210093 China
| | - Zhipeng Pei
- National Laboratory of Solid State Microstructures, School of Physics, Nanjing University, Nanjing, 210093 China
| | - Kai Leng
- National Laboratory of Solid State Microstructures, School of Physics, Nanjing University, Nanjing, 210093 China
| | - Xinhua Zhu
- National Laboratory of Solid State Microstructures, School of Physics, Nanjing University, Nanjing, 210093 China
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4
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Molinari A, Hahn H, Kruk R. Voltage-Control of Magnetism in All-Solid-State and Solid/Liquid Magnetoelectric Composites. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2019; 31:e1806662. [PMID: 30785649 DOI: 10.1002/adma.201806662] [Citation(s) in RCA: 26] [Impact Index Per Article: 5.2] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/14/2018] [Revised: 12/20/2018] [Indexed: 06/09/2023]
Abstract
The control of magnetism by means of low-power electric fields, rather than dissipative flowing currents, has the potential to revolutionize conventional methods of data storage and processing, sensing, and actuation. A promising strategy relies on the utilization of magnetoelectric composites to finely tune the interplay between electric and magnetic degrees of freedom at the interface of two functional materials. Albeit early works predominantly focused on the magnetoelectric coupling at solid/solid interfaces; however, recently there has been an increased interest related to the opportunities offered by liquid-gating techniques. Here, a comparative overview on voltage control of magnetism in all-solid-state and solid/liquid composites is presented within the context of the principal coupling mediators, i.e., strain, charge carrier doping, and ionic intercalation. Further, an exhaustive and critical discussion is carried out, concerning the suitability of using the common definition of coupling coefficient α C = Δ M Δ E to compare the strength of the interaction between electricity and magnetism among different magnetoelectric systems.
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Affiliation(s)
- Alan Molinari
- Institute of Nanotechnology (INT), Karlsruhe Institute of Technology (KIT), Hermann-von-Helmholtz-Platz 1, 76344, Eggenstein-Leopoldshafen, Germany
| | - Horst Hahn
- Institute of Nanotechnology (INT), Karlsruhe Institute of Technology (KIT), Hermann-von-Helmholtz-Platz 1, 76344, Eggenstein-Leopoldshafen, Germany
- KIT-TUD-Joint Research Laboratory Nanomaterials, Technical University Darmstadt, Jovanka-Bontschits-Strasse 2, 64287, Darmstadt, Germany
| | - Robert Kruk
- Institute of Nanotechnology (INT), Karlsruhe Institute of Technology (KIT), Hermann-von-Helmholtz-Platz 1, 76344, Eggenstein-Leopoldshafen, Germany
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5
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Frantti J, Fujioka Y, Molaison JJ, Boehler R, Haberl B, Tulk CA, Dos Santos AM. Compression mechanisms of ferroelectric PbTiO 3 via high pressure neutron scattering. JOURNAL OF PHYSICS. CONDENSED MATTER : AN INSTITUTE OF PHYSICS JOURNAL 2018; 30:435702. [PMID: 30239333 DOI: 10.1088/1361-648x/aae342] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/08/2023]
Abstract
Switchable atomic displacements generate electric dipole moments in ferroelectric materials utilized in many contemporary devices. Lead titanate, a perovskite oxide with formula PbTiO3, has been referred to as a textbook example of a prototype displacive ferroelectric and is a testing platform of widely used models of piezoelectric response of complex solid-solutions. PbTiO3 has been addressed by experimental and computational studies, often with apparently conflicting conclusions. To date, hydrostatic pressure experiments have been interpreted in terms of a model in which the dipole moments gradually diminish with increasing pressure until a transition to a cubic phase, characterized by a zero average dipole moment, occurs. The model unrealistically assumes an even compression of the crystal. Here we show by high-pressure neutron powder diffraction measurements that a fast and slow shrinkage of 12-oxygen cages around Pb and octahedra around Ti, respectively, takes place. A phase diagram consolidating earlier and present results is given.
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Affiliation(s)
- J Frantti
- Finnish Research and Engineering, Jaalaranta, Helsinki 00180, Finland
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6
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Mulaosmanovic H, Mikolajick T, Slesazeck S. Accumulative Polarization Reversal in Nanoscale Ferroelectric Transistors. ACS APPLIED MATERIALS & INTERFACES 2018; 10:23997-24002. [PMID: 29947210 DOI: 10.1021/acsami.8b08967] [Citation(s) in RCA: 9] [Impact Index Per Article: 1.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/23/2023]
Abstract
The electric-field-driven and reversible polarization switching in ferroelectric materials provides a promising approach for nonvolatile information storage. With the advent of ferroelectricity in hafnium oxide, it has become possible to fabricate ultrathin ferroelectric films suitable for nanoscale electronic devices. Among them, ferroelectric field-effect transistors (FeFETs) emerge as attractive memory elements. While the binary switching between the two logic states, accomplished through a single voltage pulse, is mainly being investigated in FeFETs, additional and unusual switching mechanisms remain largely unexplored. In this work, we report the natural property of ferroelectric hafnium oxide, embedded within a nanoscale FeFET, to accumulate electrical excitation, followed by a sudden and complete switching. The accumulation is attributed to the progressive polarization reversal through localized ferroelectric nucleation. The electrical experiments reveal a strong field and time dependence of the phenomenon. These results not only offer novel insights that could prove critical for memory applications but also might inspire to exploit FeFETs for unconventional computing.
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Affiliation(s)
| | - Thomas Mikolajick
- NaMLab gGmbH , 01187 Dresden , Germany
- Chair of Nanoelectronic Materials , TU Dresden , 01062 Dresden , Germany
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7
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Scheiderer P, Schmitt M, Gabel J, Zapf M, Stübinger M, Schütz P, Dudy L, Schlueter C, Lee TL, Sing M, Claessen R. Tailoring Materials for Mottronics: Excess Oxygen Doping of a Prototypical Mott Insulator. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2018; 30:e1706708. [PMID: 29732633 DOI: 10.1002/adma.201706708] [Citation(s) in RCA: 8] [Impact Index Per Article: 1.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/16/2017] [Revised: 02/02/2018] [Indexed: 06/08/2023]
Abstract
The Mott transistor is a paradigm for a new class of electronic devices-often referred to by the term Mottronics-which are based on charge correlations between the electrons. Since correlation-induced insulating phases of most oxide compounds are usually very robust, new methods have to be developed to push such materials right to the boundary to the metallic phase in order to enable the metal-insulator transition to be switched by electric gating. Here, it is demonstrated that thin films of the prototypical Mott insulator LaTiO3 grown by pulsed laser deposition under oxygen atmosphere are readily tuned by excess oxygen doping across the line of the band-filling controlled Mott transition in the electronic phase diagram. The detected insulator to metal transition is characterized by a strong change in resistivity of several orders of magnitude. The use of suitable substrates and capping layers to inhibit oxygen diffusion facilitates full control of the oxygen content and renders the films stable against exposure to ambient conditions. These achievements represent a significant advancement in control and tuning of the electronic properties of LaTiO3+x thin films making it a promising channel material in future Mottronic devices.
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Affiliation(s)
- Philipp Scheiderer
- Physikalisches Institut and Röntgen Center for Complex Material Systems (RCCM), Universität Würzburg, Am Hubland, D-97074, Würzburg, Germany
| | - Matthias Schmitt
- Physikalisches Institut and Röntgen Center for Complex Material Systems (RCCM), Universität Würzburg, Am Hubland, D-97074, Würzburg, Germany
| | - Judith Gabel
- Physikalisches Institut and Röntgen Center for Complex Material Systems (RCCM), Universität Würzburg, Am Hubland, D-97074, Würzburg, Germany
| | - Michael Zapf
- Physikalisches Institut and Röntgen Center for Complex Material Systems (RCCM), Universität Würzburg, Am Hubland, D-97074, Würzburg, Germany
| | - Martin Stübinger
- Physikalisches Institut and Röntgen Center for Complex Material Systems (RCCM), Universität Würzburg, Am Hubland, D-97074, Würzburg, Germany
| | - Philipp Schütz
- Physikalisches Institut and Röntgen Center for Complex Material Systems (RCCM), Universität Würzburg, Am Hubland, D-97074, Würzburg, Germany
| | - Lenart Dudy
- Physikalisches Institut and Röntgen Center for Complex Material Systems (RCCM), Universität Würzburg, Am Hubland, D-97074, Würzburg, Germany
| | | | - Tien-Lin Lee
- Diamond Light Source Ltd., Didcot, Oxfordshire, OX11 0DE, UK
| | - Michael Sing
- Physikalisches Institut and Röntgen Center for Complex Material Systems (RCCM), Universität Würzburg, Am Hubland, D-97074, Würzburg, Germany
| | - Ralph Claessen
- Physikalisches Institut and Röntgen Center for Complex Material Systems (RCCM), Universität Würzburg, Am Hubland, D-97074, Würzburg, Germany
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8
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Malashevich A, Marshall MSJ, Visani C, Disa AS, Xu H, Walker FJ, Ahn CH, Ismail-Beigi S. Controlling Mobility in Perovskite Oxides by Ferroelectric Modulation of Atomic-Scale Interface Structure. NANO LETTERS 2018; 18:573-578. [PMID: 29251937 DOI: 10.1021/acs.nanolett.7b04715] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/07/2023]
Abstract
Coherent and epitaxial interfaces permit the realization of electric field driven devices controlled by atomic-scale structural and electronic effects at interfaces. Compared to conventional field effect devices where channel conductivity is modulated by carrier density modification, the propagation of atomic-scale distortions across an interface can control the atomic scale bonding, interatomic electron tunneling rates and thus the mobility of the channel material. We use first-principles theory to design an atomically abrupt epitaxial perovskite heterostructure involving an oxide ferroelectric (PbZr0.2Ti0.8O3) and conducting oxide channel (LaNiO3) where coupling of polar atomic motions to structural distortions can induce large, reversible changes in the channel mobility. We fabricate and characterize the heterostructure and measure record values, larger than 1000%, for the conductivity modulation. Our results describe how purely interfacial effects can be engineered to deliver unique electronic device properties and large responses to external fields.
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Affiliation(s)
- Andrei Malashevich
- Center for Research on Interface Structures and Phenomena (CRISP), Yale University , New Haven, Connecticut 06520, United States
- Department of Applied Physics, Yale University , New Haven, Connecticut 06520, United States
| | - Matthew S J Marshall
- Center for Research on Interface Structures and Phenomena (CRISP), Yale University , New Haven, Connecticut 06520, United States
- Department of Applied Physics, Yale University , New Haven, Connecticut 06520, United States
| | - Cristina Visani
- Center for Research on Interface Structures and Phenomena (CRISP), Yale University , New Haven, Connecticut 06520, United States
- Department of Applied Physics, Yale University , New Haven, Connecticut 06520, United States
| | - Ankit S Disa
- Center for Research on Interface Structures and Phenomena (CRISP), Yale University , New Haven, Connecticut 06520, United States
| | - Haichao Xu
- Center for Research on Interface Structures and Phenomena (CRISP), Yale University , New Haven, Connecticut 06520, United States
- Department of Applied Physics, Yale University , New Haven, Connecticut 06520, United States
- Advanced Materials Laboratory, Fudan University , Shanghai 200433, People's Republic of China
| | - Frederick J Walker
- Center for Research on Interface Structures and Phenomena (CRISP), Yale University , New Haven, Connecticut 06520, United States
- Department of Applied Physics, Yale University , New Haven, Connecticut 06520, United States
| | - Charles H Ahn
- Center for Research on Interface Structures and Phenomena (CRISP), Yale University , New Haven, Connecticut 06520, United States
- Department of Applied Physics, Yale University , New Haven, Connecticut 06520, United States
- Department of Mechanical Engineering and Materials Science, Yale University , New Haven, Connecticut 06520, United States
- Department of Physics, Yale University , New Haven, Connecticut 06520, United States
| | - Sohrab Ismail-Beigi
- Center for Research on Interface Structures and Phenomena (CRISP), Yale University , New Haven, Connecticut 06520, United States
- Department of Applied Physics, Yale University , New Haven, Connecticut 06520, United States
- Department of Mechanical Engineering and Materials Science, Yale University , New Haven, Connecticut 06520, United States
- Department of Physics, Yale University , New Haven, Connecticut 06520, United States
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9
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Rajapitamahuni A, Zhang L, Koten MA, Singh VR, Burton JD, Tsymbal EY, Shield JE, Hong X. Giant Enhancement of Magnetic Anisotropy in Ultrathin Manganite Films via Nanoscale 1D Periodic Depth Modulation. PHYSICAL REVIEW LETTERS 2016; 116:187201. [PMID: 27203341 DOI: 10.1103/physrevlett.116.187201] [Citation(s) in RCA: 12] [Impact Index Per Article: 1.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/22/2015] [Indexed: 06/05/2023]
Abstract
The relatively low magnetocrystalline anisotropy (MCA) in strongly correlated manganites (La,Sr)MnO_{3} has been a major hurdle for implementing them in spintronic applications. Here we report an unusual, giant enhancement of in-plane MCA in 6 nm La_{0.67}Sr_{0.33}MnO_{3} (LSMO) films grown on (001) SrTiO_{3} substrates when the top 2 nm is patterned into periodic stripes of 100 or 200 nm width. Planar Hall effect measurements reveal an emergent uniaxial anisotropy superimposed on one of the original biaxial easy axes for unpatterned LSMO along ⟨110⟩ directions, with a 50-fold enhanced anisotropy energy density of 5.6×10^{6} erg/cm^{3} within the nanostripes, comparable to the value for cobalt. The magnitude and direction of the uniaxial anisotropy exclude shape anisotropy and the step edge effect as its origin. High resolution transmission electron microscopy studies reveal a nonequilibrium strain distribution and drastic suppression in the c-axis lattice constant within the nanostructures, which is the driving mechanism for the enhanced uniaxial MCA, as suggested by first-principles density functional calculations.
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Affiliation(s)
- A Rajapitamahuni
- Department of Physics and Astronomy, University of Nebraska-Lincoln, Lincoln, Nebraska 68588-0299, USA
| | - L Zhang
- Department of Physics and Astronomy, University of Nebraska-Lincoln, Lincoln, Nebraska 68588-0299, USA
| | - M A Koten
- Department of Mechanical & Materials Engineering, University of Nebraska-Lincoln, Lincoln, Nebraska 68588-0299, USA
| | - V R Singh
- Department of Physics and Astronomy, University of Nebraska-Lincoln, Lincoln, Nebraska 68588-0299, USA
| | - J D Burton
- Department of Physics and Astronomy, University of Nebraska-Lincoln, Lincoln, Nebraska 68588-0299, USA
| | - E Y Tsymbal
- Department of Physics and Astronomy, University of Nebraska-Lincoln, Lincoln, Nebraska 68588-0299, USA
- Nebraska Center for Materials and Nanoscience, University of Nebraska-Lincoln, Lincoln, Nebraska 68588-0299, USA
| | - J E Shield
- Department of Mechanical & Materials Engineering, University of Nebraska-Lincoln, Lincoln, Nebraska 68588-0299, USA
- Nebraska Center for Materials and Nanoscience, University of Nebraska-Lincoln, Lincoln, Nebraska 68588-0299, USA
| | - X Hong
- Department of Physics and Astronomy, University of Nebraska-Lincoln, Lincoln, Nebraska 68588-0299, USA
- Nebraska Center for Materials and Nanoscience, University of Nebraska-Lincoln, Lincoln, Nebraska 68588-0299, USA
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10
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Hong X. Emerging ferroelectric transistors with nanoscale channel materials: the possibilities, the limitations. JOURNAL OF PHYSICS. CONDENSED MATTER : AN INSTITUTE OF PHYSICS JOURNAL 2016; 28:103003. [PMID: 26881391 DOI: 10.1088/0953-8984/28/10/103003] [Citation(s) in RCA: 22] [Impact Index Per Article: 2.8] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/05/2023]
Abstract
Combining the nonvolatile, locally switchable polarization field of a ferroelectric thin film with a nanoscale electronic material in a field effect transistor structure offers the opportunity to examine and control a rich variety of mesoscopic phenomena and interface coupling. It is also possible to introduce new phases and functionalities into these hybrid systems through rational design. This paper reviews two rapidly progressing branches in the field of ferroelectric transistors, which employ two distinct classes of nanoscale electronic materials as the conducting channel, the two-dimensional (2D) electron gas graphene and the strongly correlated transition metal oxide thin films. The topics covered include the basic device physics, novel phenomena emerging in the hybrid systems, critical mechanisms that control the magnitude and stability of the field effect modulation and the mobility of the channel material, potential device applications, and the performance limitations of these devices due to the complex interface interactions and challenges in achieving controlled materials properties. Possible future directions for this field are also outlined, including local ferroelectric gate control via nanoscale domain patterning and incorporating other emergent materials in this device concept, such as the simple binary ferroelectrics, layered 2D transition metal dichalcogenides, and the 4d and 5d heavy metal compounds with strong spin-orbit coupling.
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Affiliation(s)
- Xia Hong
- Department of Physics and Astronomy and Nebraska Center for Materials and Nanoscience University of Nebraska-Lincoln, Lincoln, NE 68588, USA
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11
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Hu JM, Chen LQ, Nan CW. Multiferroic Heterostructures Integrating Ferroelectric and Magnetic Materials. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2016; 28:15-39. [PMID: 26551616 DOI: 10.1002/adma.201502824] [Citation(s) in RCA: 90] [Impact Index Per Article: 11.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/11/2015] [Revised: 08/18/2015] [Indexed: 06/05/2023]
Abstract
Multiferroic heterostructures can be synthesized by integrating monolithic ferroelectric and magnetic materials, with interfacial coupling between electric polarization and magnetization, through the exchange of elastic, electric, and magnetic energy. Although the nature of the interfaces remains to be unraveled, such cross coupling can be utilized to manipulate the magnetization (or polarization) with an electric (or magnetic) field, known as a converse (or direct) magnetoelectric effect. It can be exploited to significantly improve the performance of or/and add new functionalities to many existing or emerging devices such as memory devices, tunable microwave devices, sensors, etc. The exciting technological potential, along with the rich physical phenomena at the interface, has sparked intensive research on multiferroic heterostructures for more than a decade. Here, we summarize the most recent progresses in the fundamental principles and potential applications of the interface-based magnetoelectric effect in multiferroic heterostructures, and present our perspectives on some key issues that require further study in order to realize their practical device applications.
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Affiliation(s)
- Jia-Mian Hu
- State Key Laboratory of New Ceramics and Fine Processing and School of Materials Science and Engineering, Tsinghua University, Beijing, 100084, P. R. China
- Department of Materials Science and Engineering, Pennsylvania State University, University Park, PA, 16802, USA
| | - Long-Qing Chen
- State Key Laboratory of New Ceramics and Fine Processing and School of Materials Science and Engineering, Tsinghua University, Beijing, 100084, P. R. China
- Department of Materials Science and Engineering, Pennsylvania State University, University Park, PA, 16802, USA
| | - Ce-Wen Nan
- State Key Laboratory of New Ceramics and Fine Processing and School of Materials Science and Engineering, Tsinghua University, Beijing, 100084, P. R. China
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Vaz CAF, Walker FJ, Ahn CH, Ismail-Beigi S. Intrinsic interfacial phenomena in manganite heterostructures. JOURNAL OF PHYSICS. CONDENSED MATTER : AN INSTITUTE OF PHYSICS JOURNAL 2015; 27:123001. [PMID: 25721578 DOI: 10.1088/0953-8984/27/12/123001] [Citation(s) in RCA: 4] [Impact Index Per Article: 0.4] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/04/2023]
Abstract
We review recent advances in our understanding of interfacial phenomena that emerge when dissimilar materials are brought together at atomically sharp and coherent interfaces. In particular, we focus on phenomena that are intrinsic to the interface and review recent work carried out on perovskite manganites interfaces, a class of complex oxides whose rich electronic properties have proven to be a useful playground for the discovery and prediction of novel phenomena.
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Affiliation(s)
- C A F Vaz
- Swiss Light Source, Paul Scherrer Institute, 5232 Villigen PSI, Switzerland
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Mukherjee R, Ghosh B, Saha S, Bharti C, Sinha T. Structural and electrical transport properties of a rare earth double perovskite oxide: Ba2ErNbO6. J RARE EARTH 2014. [DOI: 10.1016/s1002-0721(14)60076-4] [Citation(s) in RCA: 11] [Impact Index Per Article: 1.1] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/26/2022]
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14
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Bretos I, Jiménez R, Wu A, Kingon AI, Vilarinho PM, Calzada ML. Activated solutions enabling low-temperature processing of functional ferroelectric oxides for flexible electronics. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2014; 26:1405-9. [PMID: 24339131 DOI: 10.1002/adma.201304308] [Citation(s) in RCA: 18] [Impact Index Per Article: 1.8] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/27/2013] [Revised: 10/21/2013] [Indexed: 05/26/2023]
Abstract
Functional ferroelectric oxides for flexible electronics are achieved from activated solutions enabling low-temperature processing and large-area deposition directly on polymeric substrates. This processing technology reaches the lower limit temperature of crystallization at 300 °C, using a strategy that combines seeded diphasic precursors and photochemical solution deposition. Properties of these materials are comparable to those of high-temperature-processed counterparts and organic ferroelectrics.
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Affiliation(s)
- Iñigo Bretos
- Instituto de Ciencia de Materiales de Madrid (ICMM-CSIC), Cantoblanco, 28049, Madrid, Spain
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15
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Abstract
The electric field control of functional properties is an important goal in oxide-based electronics. To endow devices with memory, ferroelectric gating is interesting, but usually weak compared to volatile electrolyte gating. Here, we report a very large ferroelectric field-effect in perovskite heterostructures combining the Mott insulator CaMnO3 and the ferroelectric BiFeO3 in its “supertetragonal” phase. Upon polarization reversal of the BiFeO3 gate, the CaMnO3 channel resistance shows a fourfold variation around room temperature, and a tenfold change at ~200 K. This is accompanied by a carrier density modulation exceeding one order of magnitude. We have analyzed the results for various CaMnO3 thicknesses and explain them by the electrostatic doping of the CaMnO3 layer and the presence of a fixed dipole at the CaMnO3/BiFeO3 interface. Our results suggest the relevance of ferroelectric gates to control orbital- or spin-ordered phases, ubiquitous in Mott systems, and pave the way toward efficient Mott-tronics devices.
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Vaz CAF. Electric field control of magnetism in multiferroic heterostructures. JOURNAL OF PHYSICS. CONDENSED MATTER : AN INSTITUTE OF PHYSICS JOURNAL 2012; 24:333201. [PMID: 22824827 DOI: 10.1088/0953-8984/24/33/333201] [Citation(s) in RCA: 44] [Impact Index Per Article: 3.7] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/01/2023]
Abstract
We review the recent developments in the electric field control of magnetism in multiferroic heterostructures, which consist of heterogeneous materials systems where a magnetoelectric coupling is engineered between magnetic and ferroelectric components. The magnetoelectric coupling in these composite systems is interfacial in origin, and can arise from elastic strain, charge, and exchange bias interactions, with different characteristic responses and functionalities. Moreover, charge transport phenomena in multiferroic heterostructures, where both magnetic and ferroelectric order parameters are used to control charge transport, suggest new possibilities to control the conduction paths of the electron spin, with potential for device applications.
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Affiliation(s)
- C A F Vaz
- SwissFEL, Paul Scherrer Institut, Villigen PSI, Switzerland.
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