Large-area regular nanodomain patterning in He-irradiated lithium niobate crystals

Effects of the Domain Wall Conductivity on the Domain Formation under AFM-Tip Voltages in Ion-Sliced LiNbO3 Films

The specified domain patterns were written by AFM-tip voltages in LiNbO3 films composing LNOI (LiNbO3-on-insulator). The domain wall conductivity (DWC) was estimated in the written patterns. This estimate was based on the effects of load resistors RL inserted between DWs and the ground, on the features of occurring domains. In this case, the domain formation is controlled by the ratio between RL and the DWs’ resistance RDW. Starting from the comparison of patterns appearing at different RL, the value of RDW in a specified pattern was estimated. The corresponding DWC is of σDW ≈ 10−3 (Ohm cm)−1 which exceeds the tabular bulk conductivity of LiNbO3 by no less than twelve orders of magnitude. A small DW inclination angle of (10−4)0 responsible for this DWC is not caused by any external action and characterizes the domain frontal growth under an AFM-tip voltage.

Nano-Domains Produced through a Two-Step Poling Technique in Lithium Niobate on Insulators

We proposed a two-step poling technique to fabricate nanoscale domains based on the anti-parallel polarization reversal effect in lithium niobate on insulator (LNOI). The anti-parallel polarization reversal is observed when lithium niobate thin film in LNOI is poled by applying a high voltage pulse through the conductive probe tip of atomic force microscope, which generates a donut-shaped domain structure with its domain polarization at the center being anti-parallel to the poling field. The donut-shaped domain is unstable and decays with a time scale of hours. With the two-step poling technique, the polarization of the donut-shaped domain can be reversed entirely, producing a stable dot domain with a size of tens of nanometers. Dot domains with diameter of the order of ∼30 nm were fabricated through the two-step poling technique. The results may be beneficial to domain-based applications such as ferroelectric domain memory.

Low loss optical waveguides fabricated in LiTaO3 by swift heavy ion irradiation

Optical waveguides are fabricated by irradiation of LiTaO₃ with a variety of swift heavy ions that provide increasing levels of both nuclear and electronic damage rates, including C, F and Si ions, in the energy range of 15-40 MeV. A systematic study of the role of the ion fluence has been carried out in the broad range of 1e13-2e15 at/cm². The kinetics of damage is initially of nuclear origin for the lowest fluences and stopping powers and, then, is enhanced by the electronic excitation (for F and Si ions) in synergy with the nuclear damage. Applying suitable annealing treatments, optical propagation losses values as low as 0.1 dB have been achieved. The damage rates found in LiTaO₃ have been compared with those known for the reference LiNbO₃ and discussed in the context of the thermal spike model.