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Perumal Veeramalai C, Li F, Guo T, Kim TW. Highly flexible memristive devices based on MoS 2 quantum dots sandwiched between PMSSQ layers. Dalton Trans 2019; 48:2422-2429. [PMID: 30688957 DOI: 10.1039/c8dt04593c] [Citation(s) in RCA: 14] [Impact Index Per Article: 2.8] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 02/01/2023]
Abstract
This paper reports a facile, cost effective method that uses an aqueous hydrothermal process for synthesizing two-dimensional molybdenum disulphide (MoS2) monolayer quantum dots (QDs) and their potential applications in flexible memristive devices. High-resolution transmission electron microscopy and atomic force microscopy images confirmed that the diameters of the synthesized MoS2 QDs with irregular shapes were in the range between 3 and 6 nm; their thicknesses were confirmed to lie between 1.0 and 0.8 nm, a clear indication that a monolayer of MoS2 QDs had been synthesized. Photoluminescence (PL) and time-resolved PL spectra of the MoS2 QDs revealed a strong emission in the blue region with a slower decay constant. Memristive devices fabricated by incorporating MoS2 QDs between poly(methylsilsesquioxane) ultrathin layers, which had been deposited on poly(ethylene terephthalate), demonstrated a high ON-OFF current ratio of ∼104, stable retention, and excellent endurance in the relaxed state; these devices were also demonstrated to function properly during bending and in a bent state. The flexible memristive devices demonstrated an OFF state with a very low current of 10-6 A. These results clearly show that ultrathin two-dimensional QDs have promising applications in high-performance flexible memristive devices.
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Zhao F, Cheng H, Hu Y, Song L, Zhang Z, Jiang L, Qu L. Functionalized graphitic carbon nitride for metal-free, flexible and rewritable nonvolatile memory device via direct laser-writing. Sci Rep 2014; 4:5882. [PMID: 25073687 PMCID: PMC4115212 DOI: 10.1038/srep05882] [Citation(s) in RCA: 85] [Impact Index Per Article: 8.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 04/30/2014] [Accepted: 07/08/2014] [Indexed: 11/09/2022] Open
Abstract
Graphitic carbon nitride nanosheet (g-C3N4-NS) has layered structure similar with graphene nanosheet and presents unusual physicochemical properties due to the s-triazine fragments. But their electronic and electrochemical applications are limited by the relatively poor conductivity. The current work provides the first example that atomically thick g-C3N4-NSs are the ideal candidate as the active insulator layer with tunable conductivity for achieving the high performance memory devices with electrical bistability. Unlike in conventional memory diodes, the g-C3N4-NSs based devices combined with graphene layer electrodes are flexible, metal-free and low cost. The functionalized g-C3N4-NSs exhibit desirable dispersibility and dielectricity which support the all-solution fabrication and high performance of the memory diodes. Moreover, the flexible memory diodes are conveniently fabricated through the fast laser writing process on graphene oxide/g-C3N4-NSs/graphene oxide thin film. The obtained devices not only have the nonvolatile electrical bistability with great retention and endurance, but also show the rewritable memory effect with a reliable ON/OFF ratio of up to 10(5), which is the highest among all the metal-free flexible memory diodes reported so far, and even higher than those of metal-containing devices.
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Affiliation(s)
- Fei Zhao
- Key Laboratory of Cluster Science, Ministry of Education, School of Chemistry, Beijing Institute of Technology, Beijing 100081, China
| | - Huhu Cheng
- Key Laboratory of Cluster Science, Ministry of Education, School of Chemistry, Beijing Institute of Technology, Beijing 100081, China
| | - Yue Hu
- Key Laboratory of Cluster Science, Ministry of Education, School of Chemistry, Beijing Institute of Technology, Beijing 100081, China
| | - Long Song
- Key Laboratory of Cluster Science, Ministry of Education, School of Chemistry, Beijing Institute of Technology, Beijing 100081, China
| | - Zhipan Zhang
- Key Laboratory of Cluster Science, Ministry of Education, School of Chemistry, Beijing Institute of Technology, Beijing 100081, China
| | - Lan Jiang
- Laser Micro-/Nano-Fabrication Laboratory, School of Mechanical Engineering, Beijing Institute of Technology, Beijing 100081, China
| | - Liangti Qu
- Key Laboratory of Cluster Science, Ministry of Education, School of Chemistry, Beijing Institute of Technology, Beijing 100081, China
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Nagashima K, Koga H, Celano U, Zhuge F, Kanai M, Rahong S, Meng G, He Y, De Boeck J, Jurczak M, Vandervorst W, Kitaoka T, Nogi M, Yanagida T. Cellulose nanofiber paper as an ultra flexible nonvolatile memory. Sci Rep 2014; 4:5532. [PMID: 24985164 PMCID: PMC4078308 DOI: 10.1038/srep05532] [Citation(s) in RCA: 99] [Impact Index Per Article: 9.9] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 04/03/2014] [Accepted: 06/13/2014] [Indexed: 12/05/2022] Open
Abstract
On the development of flexible electronics, a highly flexible nonvolatile memory, which is an important circuit component for the portability, is necessary. However, the flexibility of existing nonvolatile memory has been limited, e.g. the smallest radius into which can be bent has been millimeters range, due to the difficulty in maintaining memory properties while bending. Here we propose the ultra flexible resistive nonvolatile memory using Ag-decorated cellulose nanofiber paper (CNP). The Ag-decorated CNP devices showed the stable nonvolatile memory effects with 6 orders of ON/OFF resistance ratio and the small standard deviation of switching voltage distribution. The memory performance of CNP devices can be maintained without any degradation when being bent down to the radius of 350 μm, which is the smallest value compared to those of existing any flexible nonvolatile memories. Thus the present device using abundant and mechanically flexible CNP offers a highly flexible nonvolatile memory for portable flexible electronics.
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Affiliation(s)
- Kazuki Nagashima
- The Institute of Scientific and Industrial Research, Osaka University, 8-1 Mihogaoka Ibaraki, Osaka, 567-0047, Japan
| | - Hirotaka Koga
- The Institute of Scientific and Industrial Research, Osaka University, 8-1 Mihogaoka Ibaraki, Osaka, 567-0047, Japan
| | - Umberto Celano
- IMEC, Kapeldreef 75, B-3001 Heverlee (Leuven), Belgium
- KU Leuven, Department of Physics and Astronomy (IKS), Celestijnenlaan 200D, 3001 Leuven, Belgium
| | - Fuwei Zhuge
- The Institute of Scientific and Industrial Research, Osaka University, 8-1 Mihogaoka Ibaraki, Osaka, 567-0047, Japan
| | - Masaki Kanai
- The Institute of Scientific and Industrial Research, Osaka University, 8-1 Mihogaoka Ibaraki, Osaka, 567-0047, Japan
| | - Sakon Rahong
- The Institute of Scientific and Industrial Research, Osaka University, 8-1 Mihogaoka Ibaraki, Osaka, 567-0047, Japan
| | - Gang Meng
- The Institute of Scientific and Industrial Research, Osaka University, 8-1 Mihogaoka Ibaraki, Osaka, 567-0047, Japan
| | - Yong He
- The Institute of Scientific and Industrial Research, Osaka University, 8-1 Mihogaoka Ibaraki, Osaka, 567-0047, Japan
| | - Jo De Boeck
- IMEC, Kapeldreef 75, B-3001 Heverlee (Leuven), Belgium
| | | | - Wilfried Vandervorst
- IMEC, Kapeldreef 75, B-3001 Heverlee (Leuven), Belgium
- KU Leuven, Department of Physics and Astronomy (IKS), Celestijnenlaan 200D, 3001 Leuven, Belgium
| | - Takuya Kitaoka
- Department of Agro-environmental Sciences, Graduate School of Bioresource and Bioenvironmental Sciences, Kyushu University, Fukuoka, 812-8581, Japan
| | - Masaya Nogi
- The Institute of Scientific and Industrial Research, Osaka University, 8-1 Mihogaoka Ibaraki, Osaka, 567-0047, Japan
| | - Takeshi Yanagida
- The Institute of Scientific and Industrial Research, Osaka University, 8-1 Mihogaoka Ibaraki, Osaka, 567-0047, Japan
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Younis A, Chu D, Li CM, Das T, Sehar S, Manefield M, Li S. Interface thermodynamic state-induced high-performance memristors. LANGMUIR : THE ACS JOURNAL OF SURFACES AND COLLOIDS 2014; 30:1183-1189. [PMID: 24400696 DOI: 10.1021/la404389b] [Citation(s) in RCA: 7] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/03/2023]
Abstract
A new class of memristors based on long-range-ordered CeO2 nanocubes with a controlled degree of self-assembly is presented, in which the regularity and range of the nanocubes can be greatly improved with a highly concentrated dispersed surfactant. The magnitudes of the hydrophobicity and surface energy components as functions of surfactant concentration were also investigated. The self-assembled nanostructure was found to demonstrate excellent degradation in device threshold voltage with excellent uniformity in resistive switching parameters, particularly a set voltage distribution of ∼ 0.2 V over 30 successive cycles and a fast response time for writing (0.2 μs) and erasing (1 μs) operations, thus offering great potential for nonvolatile memory applications with high performance at low cost.
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Affiliation(s)
- Adnan Younis
- School of Materials Science and Engineering and §Centre for Marine Bio-Innovation, School of Biotechnology and Biomolecular Sciences, University of New South Wales , Sydney 2052, NSW, Australia
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Son DI, Kwon BW, Park DH, Seo WS, Yi Y, Angadi B, Lee CL, Choi WK. Emissive ZnO-graphene quantum dots for white-light-emitting diodes. NATURE NANOTECHNOLOGY 2012; 7:465-71. [PMID: 22635098 DOI: 10.1038/nnano.2012.71] [Citation(s) in RCA: 186] [Impact Index Per Article: 15.5] [Reference Citation Analysis] [Abstract] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/25/2012] [Accepted: 04/13/2012] [Indexed: 05/23/2023]
Abstract
Hybrid nanostructures combining inorganic materials and graphene are being developed for applications such as fuel cells, batteries, photovoltaics and sensors. However, the absence of a bandgap in graphene has restricted the electrical and optical characteristics of these hybrids, particularly their emissive properties. Here, we use a simple solution method to prepare emissive hybrid quantum dots consisting of a ZnO core wrapped in a shell of single-layer graphene. We then use these quantum dots to make a white-light-emitting diode with a brightness of 798 cd m(-2). The strain introduced by curvature opens an electronic bandgap of 250 meV in the graphene, and two additional blue emission peaks are observed in the luminescent spectrum of the quantum dot. Density functional theory calculations reveal that these additional peaks result from a splitting of the lowest unoccupied orbitals of the graphene into three orbitals with distinct energy levels. White emission is achieved by combining the quantum dots with other emissive materials in a multilayer light-emitting diode.
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Affiliation(s)
- Dong Ick Son
- Interface Control Research Center, Future Convergence Research Division, Korea Institute of Science and Technology, Hwarangro 14 gil 5, Seoul, Korea
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