• Reference Citation Analysis
  • v
  • v
  • Find an Article
Find an Article PDF (4595689)   Today's Articles (1805)   Subscriber (49331)
For: Arun A, Campidelli S, Filoramo A, Derycke V, Salet P, Ionescu AM, Goffman MF. SWNT array resonant gate MOS transistor. Nanotechnology 2011;22:055204. [PMID: 21178263 DOI: 10.1088/0957-4484/22/5/055204] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.2] [Reference Citation Analysis] [What about the content of this article? (0)] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/30/2023]
Number Cited by Other Article(s)
1
Tunable micro- and nanomechanical resonators. SENSORS 2015;15:26478-566. [PMID: 26501294 PMCID: PMC4634492 DOI: 10.3390/s151026478] [Citation(s) in RCA: 16] [Impact Index Per Article: 1.8] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 07/28/2015] [Accepted: 10/09/2015] [Indexed: 01/02/2023]
2
In-plane resonant nano-electro-mechanical sensors: a comprehensive study on design, fabrication and characterization challenges. SENSORS 2013;13:9364-87. [PMID: 23881137 PMCID: PMC3758653 DOI: 10.3390/s130709364] [Citation(s) in RCA: 11] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 06/09/2013] [Revised: 07/12/2013] [Accepted: 07/18/2013] [Indexed: 11/17/2022]
3
Lebental B, Chainais P, Chenevier P, Chevalier N, Delevoye E, Fabbri JM, Nicoletti S, Renaux P, Ghis A. Aligned carbon nanotube based ultrasonic microtransducers for durability monitoring in civil engineering. NANOTECHNOLOGY 2011;22:395501. [PMID: 21891837 DOI: 10.1088/0957-4484/22/39/395501] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/31/2023]
4
Svensson J, Lindahl N, Yun H, Seo M, Midtvedt D, Tarakanov Y, Lindvall N, Nerushev O, Kinaret J, Lee S, Campbell EEB. Carbon nanotube field effect transistors with suspended graphene gates. NANO LETTERS 2011;11:3569-3575. [PMID: 21848317 DOI: 10.1021/nl201280q] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.2] [Reference Citation Analysis] [Abstract] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/31/2023]
PrevPage 1 of 1 1Next
© 2004-2024 Baishideng Publishing Group Inc. All rights reserved. 7041 Koll Center Parkway, Suite 160, Pleasanton, CA 94566, USA