Lateral patterning of multilayer InAs/GaAs(001) quantum dot structures by in vacuo focused ion beam

Impact of lithography on the fluorescence dynamics of self-assembled fluorophores

Micro- and nano-patterned fluorescent materials are important for many photonic devices and applications. In this paper, we investigate the impact of three common lithographical techniques, deposition and removal of sacrificial masks, ultraviolet ablation, and focused ion beam milling, on self-assembled fluorophores. We find that different patterning techniques can dramatically change the fluorescence lifetime of the fluorophores and that the degree of modification depends on the patterning techniques.

Directed Kinetic Self-Assembly of Mounds on Patterned GaAs (001): Tunable Arrangement, Pattern Amplification and Self-Limiting Growth

We present results demonstrating directed self-assembly of nanometer-scale mounds during molecular beam epitaxial growth on patterned GaAs (001) surfaces. The mound arrangement is tunable via the growth temperature, with an inverse spacing or spatial frequency which can exceed that of the features of the template. We find that the range of film thickness over which particular mound arrangements persist is finite, due to an evolution of the shape of the mounds which causes their growth to self-limit. A difference in the film thickness at which mounds at different sites self-limit provides a means by which different arrangements can be produced.

Maskless micro/nanofabrication on GaAs surface by friction-induced selective etching

In the present study, a friction-induced selective etching method was developed to produce nanostructures on GaAs surface. Without any resist mask, the nanofabrication can be achieved by scratching and post-etching in sulfuric acid solution. The effects of the applied normal load and etching period on the formation of the nanostructure were studied. Results showed that the height of the nanostructure increased with the normal load or the etching period. XPS and Raman detection demonstrated that residual compressive stress and lattice densification were probably the main reason for selective etching, which eventually led to the protrusive nanostructures from the scratched area on the GaAs surface. Through a homemade multi-probe instrument, the capability of this fabrication method was demonstrated by producing various nanostructures on the GaAs surface, such as linear array, intersecting parallel, surface mesas, and special letters. In summary, the proposed method provided a straightforward and more maneuverable micro/nanofabrication method on the GaAs surface.