A single active nanoelectromechanical tuning fork front-end radio-frequency receiver

Ultrafast Nanoimaging of Spin-Mediated Shear Waves in an Acoustic Cavity

Strong spin-lattice coupling in van der Waals (vdW) magnets shows potential for innovative magneto-mechanical applications. Here, nanoscale and picosecond imaging by ultrafast electron microscopy reveal heterogeneous spin-mediated coherent acoustic phonon dynamics in a thin-film cavity of the vdW antiferromagnet FePS3. The harmonics of the interlayer shear acoustic modes are observed, in which the even and odd harmonics exhibit distinct nanoscopic dynamics. Corroborated by acoustic wave simulation, the role of defects in forming even harmonics is elucidated. Above the Néel temperature (TN), the interlayer shear acoustic harmonics are suppressed, while the in-plane traveling wave is predominantly excited. The dominant acoustic dynamics shifts from the out-of-plane shear to the in-plane traveling wave across TN, demonstrating that magnetic properties can influence phonon scattering pathways. The spatiotemporally resolved structural characterization provides valuable nanoscopic insights for interlayer-shear-mode-based acoustic cavities, opening up possibilities for magneto-mechanical applications of vdW magnets.

A Cascaded MEMS Amplitude Demodulator for Large Dynamic Range Application in RF Receiver

An amplitude demodulator with a large dynamic range, based on microelectromechanical systems (MEMS), is proposed in this paper. It is implemented as a cascade of a capacitive and a thermoelectric sensor. Two types of the transducer can improve the measurement range and enhance the overload capacity. This MEMS-based demodulation is realized by utilizing the square law relationship and the low-pass characteristic during the electromechanical and thermoelectric conversion. The fabrication of this device is compatible with the GaAs monolithic microwave integrated circuit (MMIC) process. Experiments show that this MEMS demodulator can realize the direct demodulation of an amplitude modulation (AM) signal with a carrier frequency of 0.35–10 GHz, and cover the power range from 0 to 23 dBm. This MEMS demodulator has the advantages of high power handling capability and zero DC power consumption.

Tunable micro- and nanomechanical resonators

Advances in micro- and nanofabrication technologies have enabled the development of novel micro- and nanomechanical resonators which have attracted significant attention due to their fascinating physical properties and growing potential applications. In this review, we have presented a brief overview of the resonance behavior and frequency tuning principles by varying either the mass or the stiffness of resonators. The progress in micro- and nanomechanical resonators using the tuning electrode, tuning fork, and suspended channel structures and made of graphene have been reviewed. We have also highlighted some major influencing factors such as large-amplitude effect, surface effect and fluid effect on the performances of resonators. More specifically, we have addressed the effects of axial stress/strain, residual surface stress and adsorption-induced surface stress on the sensing and detection applications and discussed the current challenges. We have significantly focused on the active and passive frequency tuning methods and techniques for micro- and nanomechanical resonator applications. On one hand, we have comprehensively evaluated the advantages and disadvantages of each strategy, including active methods such as electrothermal, electrostatic, piezoelectrical, dielectric, magnetomotive, photothermal, mode-coupling as well as tension-based tuning mechanisms, and passive techniques such as post-fabrication and post-packaging tuning processes. On the other hand, the tuning capability and challenges to integrate reliable and customizable frequency tuning methods have been addressed. We have additionally concluded with a discussion of important future directions for further tunable micro- and nanomechanical resonators.

Graphene mechanical oscillators with tunable frequency

Oscillators, which produce continuous periodic signals from direct current power, are central to modern communications systems, with versatile applications including timing references and frequency modulators. However, conventional oscillators typically consist of macroscopic mechanical resonators such as quartz crystals, which require excessive off-chip space. Here, we report oscillators built on micrometre-size, atomically thin graphene nanomechanical resonators, whose frequencies can be electrostatically tuned by as much as 14%. Self-sustaining mechanical motion is generated and transduced at room temperature in these oscillators using simple electrical circuitry. The prototype graphene voltage-controlled oscillators exhibit frequency stability and a modulation bandwidth sufficient for the modulation of radiofrequency carrier signals. As a demonstration, we use a graphene oscillator as the active element for frequency-modulated signal generation and achieve efficient audio signal transmission.

High frequency top-down junction-less silicon nanowire resonators

We report here the first realization of top-down silicon nanowires (SiNW) transduced by both junction-less field-effect transistor (FET) and the piezoresistive (PZR) effect. The suspended SiNWs are among the smallest top-down SiNWs reported to date, featuring widths down to ~20 nm. This has been achieved thanks to a 200 mm-wafer-scale, VLSI process fully amenable to monolithic CMOS co-integration. Thanks to the very small dimensions, the conductance of the silicon nanowire can be controlled by a nearby electrostatic gate. Both the junction-less FET and the previously demonstrated PZR transduction have been performed with the same SiNW. These self-transducing schemes have shown similar signal-to-background ratios, and the PZR transduction has exhibited a relatively higher output signal. Allan deviation (σA) of the same SiNW has been measured with both schemes, and we obtain σ(A) ~ 20 ppm for the FET detection and σ(A) ~ 3 ppm for the PZR detection at room temperature and low pressure. Orders of magnitude improvements are expected from tighter electrostatic control via changes in geometry and doping level, as well as from CMOS integration. The compact, simple topology of these elementary SiNW resonators opens up new paths towards ultra-dense arrays for gas and mass sensing, time keeping or logic switching systems on the SiNW-CMOS platform.

In-plane resonant nano-electro-mechanical sensors: a comprehensive study on design, fabrication and characterization challenges

The newly proposed in-plane resonant nano-electro-mechanical (IP R-NEM) sensor, that includes a doubly clamped suspended beam and two side electrodes, achieved a mass sensitivity of less than zepto g/Hz based on analytical and numerical analyses. The high frequency characterization and numerical/analytical studies of the fabricated sensor show that the high vacuum measurement environment will ease the resonance detection using the capacitance detection technique if only the thermoelsatic damping plays a dominant role for the total quality factor of the sensor. The usage of the intrinsic junction-less field-effect-transistor (JL FET) for the resonance detection of the sensor provides a more practical detection method for this sensor. As the second proposed sensor, the introduction of the monolithically integrated in-plane MOSFET with the suspended beam provides another solution for the ease of resonance frequency detection with similar operation to the junction-less transistor in the IP R-NEM sensor. The challenging fabrication technology for the in-plane resonant suspended gate field-effect-transistor (IP RSG-FET) sensor results in some post processing and simulation steps to fully explore and improve the direct current (DC) characteristics of the sensor for the consequent high frequency measurement. The results of modeling and characterization in this research provide a realistic guideline for these potential ultra-sensitive NEM sensors.