Patterning of sub-1 nm dangling-bond lines with atomic precision alignment on H:Si(100) surface at room temperature

Atomically Precise Manufacturing of Silicon Electronics

Atomically precise manufacturing (APM) is a key technique that involves the direct control of atoms in order to manufacture products or components of products. It has been developed most successfully using scanning probe methods and has received particular attention for developing atom scale electronics with a focus on silicon-based systems. This review captures the development of silicon atom-based electronics and is divided into several sections that will cover characterization and atom manipulation of silicon surfaces with scanning tunneling microscopy and atomic force microscopy, development of silicon dangling bonds as atomic quantum dots, creation of atom scale devices, and the wiring and packaging of those circuits. The review will also cover the advance of silicon dangling bond logic design and the progress of silicon quantum atomic designer (SiQAD) simulators. Finally, an outlook of APM and silicon atom electronics will be provided.

Lithography for robust and editable atomic-scale silicon devices and memories

At the atomic scale, there has always been a trade-off between the ease of fabrication of structures and their thermal stability. Complex structures that are created effortlessly often disorder above cryogenic conditions. Conversely, systems with high thermal stability do not generally permit the same degree of complex manipulations. Here, we report scanning tunneling microscope (STM) techniques to substantially improve automated hydrogen lithography (HL) on silicon, and to transform state-of-the-art hydrogen repassivation into an efficient, accessible error correction/editing tool relative to existing chemical and mechanical methods. These techniques are readily adapted to many STMs, together enabling fabrication of error-free, room-temperature stable structures of unprecedented size. We created two rewriteable atomic memories (1.1 petabits per in²), storing the alphabet letter-by-letter in 8 bits and a piece of music in 192 bits. With HL no longer faced with this trade-off, practical silicon-based atomic-scale devices are poised to make rapid advances towards their full potential.

Manipulation at the atomic scale comes with a trade-off between simplicity and thermal stability. Here, Achal et al. demonstrate improved automated hydrogen lithography and repassivation, enabling error-corrected atomic writing of large-scale structures/memories that are stable at room temperature.

Tip-Based Nanofabrication for Scalable Manufacturing

Tip-based nanofabrication (TBN) is a family of emerging nanofabrication techniques that use a nanometer scale tip to fabricate nanostructures. In this review, we first introduce the history of the TBN and the technology development. We then briefly review various TBN techniques that use different physical or chemical mechanisms to fabricate features and discuss some of the state-of-the-art techniques. Subsequently, we focus on those TBN methods that have demonstrated potential to scale up the manufacturing throughput. Finally, we discuss several research directions that are essential for making TBN a scalable nano-manufacturing technology.

Single-electron dynamics of an atomic silicon quantum dot on the H-Si(100)-(2×1) surface

Here we report the direct observation of single electron charging of a single atomic dangling bond (DB) on the H-Si(100)-2×1 surface. The tip of a scanning tunneling microscope is placed adjacent to the DB to serve as a single-electron sensitive charge detector. Three distinct charge states of the dangling bond--positive, neutral, and negative--are discerned. Charge state probabilities are extracted from the data, and analysis of current traces reveals the characteristic single-electron charging dynamics. Filling rates are found to decay exponentially with increasing tip-DB separation, but are not a function of sample bias, while emptying rates show a very weak dependence on tip position, but a strong dependence on sample bias, consistent with the notion of an atomic quantum dot tunnel coupled to the tip on one side and the bulk silicon on the other.