Nanoimprint and selective-area MOVPE for growth of GaAs/InAs core/shell nanowires

Anodically Induced Chemical Etching of GaAs Wafers for a GaAs Nanowire-Based Flexible Terahertz Wave Emitter

A generic top-down approach for the preparation of extended arrays of high-aspect ratio GaAs nanowires (NWs) with different crystallographic orientations (i.e., [100] or [111]) and morphologies (i.e., porous, nonporous, tapered, or awl-like NWs) is reported. The method is based on the anodically induced chemical etching (AICE) of GaAs wafers in an oxidant-free aqueous HF solution at room temperature by using a patterned metal mesh and allows us to overcome the drawbacks of conventional metal-assisted chemical etching (MACE) processes. Local oxidative dissolution of GaAs in contact with a metal is achieved by externally injecting holes (h⁺) into the valence band (VB) of GaAs through the metal mesh. It is found that injection of holes (h⁺) through direct GaAs contact, rather than the metal mesh, does not yield uniform nanowires but porosify GaAs wafers due to the high cell potential. On the basis of experiments and numerical simulation for the spatial distribution of an electric field, a phenomenological model that explains the formation of GaAs NWs and their porosification behaviors is proposed. GaAs NWs exhibit excellent terahertz (THz) wave emission properties, which vary with either the length or the shape of the nanowires. By taking advantage of controlled porosification and easy transfer of GaAs NWs to foreign substrates, a flexible THz wave emitter is realized.

Nano-LED induced chemical reactions for structuring processes

We present a structuring technique based on the initialization of chemical reactions by an array of nano-LEDs which is used in the near-field as well as in the far-field regime. In the near-field regime, we demonstrate first results with the nano-LED array for lithography using the photoresist DiazoNaphthoQuinone-(DNQ)-sulfonate for the fabrication of holes in the resist down to ∼75 nanometres in diameter. In contrast, the nano-LEDs can also be employed in the far-field regime to expose thin films of the monomer bisphenol A-glycidyl methacrylate (Bis-GMA) and to initialize polymerization locally. Photosensitive films were patterned and spherical cone-shaped three dimensional objects with diameters ranging from ∼480 nm up to 20 micrometres were obtained. The modification in the material as a result of the photochemical reaction induced i.e. by polymerization was confirmed by Raman spectroscopy. This structuring maskless technique has the potential to induce substantial changes in photosensitive molecules and to produce the desired structures from the tens of microns down to the nanometre scale.

Wafer-scale nanofabrication of sub-100 nm arrays by deep-UV displacement Talbot lithography

In this manuscript, we demonstrate the potential of replacing the standard bottom anti-reflective coating (BARC) with a polymethylglutarimide (PMGI) layer for wafer-scale nanofabrication by means of deep-UV displacement talbot lithography (DTL). PMGI is functioning as a developable non-UV sensitive bottom anti-reflective coating (DBARC). After introducing the fabrication process using a standard BARC-based coating and the novel PMGI-based one, the DTL nanopatterning capabilities for both coatings are compared by means of the fabrication of etched nanoholes in a dielectric layer and metal nanodots made by lift-off. Improvement of DTL capabilities are attributed to a reduction of process complexity by avoiding the use of O₂ plasma etching of the BARC layer. We show the capacity of this approach to produce nanoholes or nanodots with diameters ranging from 95 to 200 nm at a wafer-scale using only one mask and a proper exposing dose. The minimum diameter of the nanoholes is reduced from 118 to 95 nm when using the PMGI-based coating instead of the BARC-based one. The possibilities opened by the PMGI-based coating are illustrated by the successful fabrication of an array of nanoholes with sub-100 nm diameter for GaAs nanowire growth on a 2″ GaAs wafer, a 2″ nanoimprint lithography (NIL) master stamp, and an array of Au nanodots made by lift-off on a 4″ silica wafer. Therefore, DTL possess the potential for wafer-scale manufacturing of nano-engineered materials.

Spatially controlled VLS epitaxy of gallium arsenide nanowires on gallium nitride layers

MOVPE of Au catalyzed p-GaAs nanowires on n-GaN layers. Left: VLS growth optimization (density and morphology). Middle and right: site-controlled pn-junctions by lateral and vertical anisotropic NWs in structured SiOx openings (scalebar 1 μm).

Corner and side localization of electrons in irregular hexagonal semiconductor shells

We discuss the low energy electronic states in hexagonal rings. These states correspond to the transverse modes in core-shell nanowires built of III-V semiconductors which typically have a hexagonal cross section. In the case of symmetric structures the 12 lowest states (including the spin) are localized in the corners, while the next following 12 states are localized mostly on the sides. Depending on the material parameters, in particular the effective mass, the ring diameter and width, the corner and side states may be separated by a considerable energy gap, ranging from few to tens of meV. In a realistic fabrication process geometric asymmetries are unavoidable, and therefore the particles are not symmetrically distributed between all corner and side areas. Possibly, even small deformations may shift the localization of the ground state to one of the sides. The transverse states or the transitions between them may be important in transport or optical experiments. Still, up to date, there are only very few experimental investigations of the localization-dependent properties of core-shell nanowires.

Anisotropic light scattering by prismatic semiconductor nanowires

Anisotropic transverse light scattering by prismatic nanowires is a natural outcome of their geometry. In this work, we perform numerical calculations of the light scattering characteristics for nanowires in the optical and near-infrared range and explore the possibility of tuning the directivity by changing the angle of light incidence. The scattering cross section and the directivity of the scattered light when it is incident perpendicular to a facet or to an edge of the prism are investigated both with transverse electric and with transverse magnetic polarizations. The phenomenology includes Mie resonances and guided modes yielding together rich and complex spectra. We consider nanowires with hexagonal, square and triangular cross sections. The modes that are most sensitive to the incidence angle are the hexapole for the hexagonal case and the quadrupole for the square case. Higher order modes are also sensitive, but mostly for the square geometry. Our results indicate the possibility of a flexible in-situ tunability of the directivity simply by rotating the nanowire profile relatively to the direction of the incident light which could offer potential advantages in applications such as switching or sensing.

Synthesis and Applications of III-V Nanowires

Low-dimensional semiconductor materials structures, where nanowires are needle-like one-dimensional examples, have developed into one of the most intensely studied fields of science and technology. The subarea described in this review is compound semiconductor nanowires, with the materials covered limited to III-V materials (like GaAs, InAs, GaP, InP,...) and III-nitride materials (GaN, InGaN, AlGaN,...). We review the way in which several innovative synthesis methods constitute the basis for the realization of highly controlled nanowires, and we combine this perspective with one of how the different families of nanowires can contribute to applications. One reason for the very intense research in this field is motivated by what they can offer to main-stream semiconductors, by which ultrahigh performing electronic (e.g., transistors) and photonic (e.g., photovoltaics, photodetectors or LEDs) technologies can be merged with silicon and CMOS. Other important aspects, also covered in the review, deals with synthesis methods that can lead to dramatic reduction of cost of fabrication and opportunities for up-scaling to mass production methods.

Excitons in Core-Shell Nanowires with Polygonal Cross Sections

The distinctive prismatic geometry of semiconductor core-shell nanowires leads to complex localization patterns of carriers. Here, we describe the formation of optically active in-gap excitonic states induced by the interplay between localization of carriers in the corners and their mutual Coulomb interaction. To compute the energy spectra and configurations of excitons created in the conductive shell, we use a multielectron numerical approach based on the exact solution of the multiparticle Hamiltonian for electrons in the valence and conduction bands, which includes the Coulomb interaction in a nonperturbative manner. We expose the formation of well-separated quasidegenerate levels, and focus on the implications of the electron localization in the corners or on the sides of triangular, square, and hexagonal cross sections. We obtain excitonic in-gap states associated with symmetrically distributed electrons in the spin singlet configuration. They acquire large contributions due to Coulomb interaction, and thus are shifted to much higher energies than other states corresponding to the conduction electron and the vacancy localized in the same corner. We compare the results of the multielectron method with those of an electron-hole model, and we show that the latter does not reproduce the singlet excitonic states. We also obtain the exciton lifetime and explain selection rules which govern the recombination process.

Strain relaxation and ambipolar electrical transport in GaAs/InSb core-shell nanowires

The growth, crystal structure, strain relaxation and room temperature transport characteristics of GaAs/InSb core-shell nanowires grown using molecular beam epitaxy are investigated. Due to the large lattice mismatch between GaAs and InSb of 14%, a transition from island-based to layer-like growth occurs during the formation of the shell. High resolution transmission electron microscopy in combination with geometric phase analyses as well as X-ray diffraction with synchrotron radiation are used to investigate the strain relaxation and prove the existence of different dislocations relaxing the strain on zinc blende and wurtzite core-shell nanowire segments. While on the wurtzite phase only Frank partial dislocations are found, the strain on the zinc blende phase is relaxed by dislocations with perfect, Shockley partial and Frank partial dislocations. Even for ultrathin shells of about 2 nm thickness, the strain caused by the high lattice mismatch between GaAs and InSb is relaxed almost completely. Transfer characteristics of the core-shell nanowires show an ambipolar conductance behavior whose strength strongly depends on the dimensions of the nanowires. The interpretation is given based on an electronic band profile which is calculated for completely relaxed core/shell structures. The peculiarities of the band alignment in this situation implies simultaneously occupied electron and hole channels in the InSb shell. The ambipolar behavior is then explained by the change of carrier concentration in both channels by the gate voltage.

Electron Interference in Hall Effect Measurements on GaAs/InAs Core/Shell Nanowires

We present low-temperature magnetotransport measurements on GaAs/InAs core/shell nanowires contacted by regular source-drain leads as well as laterally attached Hall contacts, which only touch parts of the nanowire sidewalls. Low-temperature measurements between source and drain contacts show typical phase coherent effects, such as universal conductance fluctuations in a magnetic field aligned perpendicularly to the nanowire axis as well as Aharonov-Bohm-type oscillations in a parallel aligned magnetic field. However, the signal between the Hall contacts shows a Hall voltage buildup, when the magnetic field is turned perpendicular to the nanowire axis while current is driven through the wire using the source-drain contacts. At low temperatures, the phase coherent effects measured between source and drain leads are superimposed on the Hall voltage, which can be explained by nonlocal probing of large segments of the nanowire. In addition, the Aharonov-Bohm-type oscillations are also observed in the magnetoconductance at magnetic fields aligned parallel to the nanowire axis, using the laterally contacted leads. This measurement geometry hereby directly corresponds to classical Aharonov-Bohm experiments using planar quantum rings. In addition, the Hall voltage is used to characterize the nanowires in terms of charge carrier concentration and mobility, using temperature- and gate-dependent measurements as well as measurements in tilted magnetic fields. The GaAs/InAs core/shell nanowire used in combination with laterally attached contacts is therefore the ideal system to three-dimensionally combine quantum ring experiments using the cross-sectional plane and Hall experiments using the axial nanowire plane.

In-gap corner states in core-shell polygonal quantum rings

We study Coulomb interacting electrons confined in polygonal quantum rings. We focus on the interplay of localization at the polygon corners and Coulomb repulsion. Remarkably, the Coulomb repulsion allows the formation of in-gap states, i.e., corner-localized states of electron pairs or clusters shifted to energies that were forbidden for non-interacting electrons, but below the energies of corner-side-localized states. We specify conditions allowing optical excitation to those states.

Dense, Regular GaAs Nanowire Arrays by Catalyst-Free Vapor Phase Epitaxy for Light Harvesting

Density dependent growth and optical properties of periodic arrays of GaAs nanowires (NWs) by fast selective area growth MOVPE are investigated. As the period of the arrays is decreased from 500 nm down to 100 nm, a volume growth enhancement by a factor of up to four compared with the growth of a planar layer is observed. This increase is explained as resulting from increased collection of precursors on the side walls of the nanowires due to the gas flow redistribution in the space between the NWs. Normal spectral reflectance of the arrays is strongly reduced compared with a flat substrate surface in all fabricated arrays. Electromagnetic modeling reveals that this reduction is caused by antireflective action of the nanowire arrays and nanowire-diameter dependent light absorption. Irrespective of the periodicity and diameter, Raman scattering and grazing angle X-ray diffraction show signal from zinc blende and wurtzite phases, the latter originating from stacking faults as observed by high resolution transmission electron microscopy. Raman spectra contain intense surface phonons peaks, whose intensity depends strongly on the nanowire diameters as a result of potential structural changes and as well as variations of optical field distribution in the nanowires.

Multi-domain electromagnetic absorption of triangular quantum rings

We present a theoretical study of the unielectronic energy spectra, electron localization, and optical absorption of triangular core-shell quantum rings. We show how these properties depend on geometric details of the triangle, such as side thickness or corners' symmetry. For equilateral triangles, the lowest six energy states (including spin) are grouped in an energy shell, are localized only around corner areas, and are separated by a large energy gap from the states with higher energy which are localized on the sides of the triangle. The energy levels strongly depend on the aspect ratio of the triangle sides, i.e., thickness/length ratio, in such a way that the energy differences are not monotonous functions of this ratio. In particular, the energy gap between the group of states localized in corners and the states localized on the sides strongly decreases with increasing the side thickness, and then slightly increases for thicker samples. With increasing the thickness the low-energy shell remains distinct but the spatial distribution of these states spreads. The behavior of the energy levels and localization leads to a thickness-dependent absorption spectrum where one transition may be tuned in the THz domain and a second transition can be tuned from THz to the infrared range of electromagnetic spectrum. We show how these features may be further controlled with an external magnetic field. In this work the electron-electron Coulomb repulsion is neglected.

Angle-dependent magnetotransport in GaAs/InAs core/shell nanowires

We study the impact of the direction of magnetic flux on the electron motion in GaAs/InAs core/shell nanowires. At small tilt angles, when the magnetic field is aligned nearly parallel to the nanowire axis, we observe Aharonov–Bohm type h/e flux periodic magnetoconductance oscillations. These are attributed to transport via angular momentum states, formed by electron waves within the InAs shell. With increasing tilt of the nanowire in the magnetic field, the flux periodic magnetoconductance oscillations disappear. Universal conductance fluctuations are observed for all tilt angles, however with increasing amplitudes for large tilt angles. We record this evolution of the electron propagation from a circling motion around the core to a diffusive transport through scattering loops and give explanations for the observed different transport regimes separated by the magnetic field orientation.

Nano-LED array fabrication suitable for future single photon lithography

We report on an alternative illumination concept for a future lithography based on single-photon emitters and important technological steps towards its implementation. Nano light-emitting diodes (LEDs) are chosen as the photon emitters. First, the development of their fabrication and their integration technology is presented, then their optical characteristics assessed. Last, size-controlled nano-LEDs, well positioned in an array, are electrically driven and utilized for illumination. Nanostructures are lithographically formed, demonstrating the feasibility of the approach. The potential of single-photon lithography to reach the ultimate scale limits in mass production is discussed.

Self-catalyzed ternary core-shell GaAsP nanowire arrays grown on patterned Si substrates by molecular beam epitaxy

The growth of self-catalyzed ternary core-shell GaAsP nanowire (NW) arrays on SiO2 patterned Si(111) substrates has been demonstrated by using solid-source molecular beam epitaxy. A high-temperature deoxidization step up to ∼ 900 °C prior to NW growth was used to remove the native oxide and/or SiO2 residue from the patterned holes. To initiate the growth of GaAsP NW arrays, the Ga predeposition used for assisting the formation of Ga droplets in the patterned holes, was shown to be another essential step. The effects of the patterned-hole size on the NW morphology were also studied and explained using a simple growth model. A lattice-matched radial GaAsP core-shell NW structure has subsequently been developed with room-temperature photoluminescence emission around 740 nm. These results open up new perspectives for integrating position-controlled III-V NW photonic and electronic structures on a Si platform.

Position-controlled uniform GaAs nanowires on silicon using nanoimprint lithography

We report on the epitaxial growth of large-area position-controlled self-catalyzed GaAs nanowires (NWs) directly on Si by molecular beam epitaxy (MBE). Nanohole patterns are defined in a SiO2 mask on 2 in. Si wafers using nanoimprint lithography (NIL) for the growth of positioned GaAs NWs. To optimize the yield of vertical NWs the MBE growth parameter space is tuned, including Ga predeposition time, Ga and As fluxes, growth temperature, and annealing treatment prior to NW growth. In addition, a non-negligible radial growth is observed with increasing growth time and is found to be independent of the As species (i.e., As2 or As4) and the growth temperatures studied. Cross-sectional transmission electron microscopy analysis of the GaAs NW/Si substrate heterointerface reveals an epitaxial growth where NW base fills the oxide hole opening and eventually extends over the oxide mask. These findings have important implications for NW-based device designs with axial and radial p-n junctions. Finally, NIL positioned GaAs/AlGaAs core-shell heterostructured NWs are grown on Si to study the optical properties of the NWs. Room-temperature photoluminescence spectroscopy of ensembles of as-grown core-shell NWs reveals uniform and high optical quality, as required for the subsequent device applications. The combination of NIL and MBE thereby demonstrates the successful heterogeneous integration of highly uniform GaAs NWs on Si, important for fabricating high throughput, large-area position-controlled NW arrays for various optoelectronic device applications.