Multi-bit operations in vertical spintronic shift registers

Tailoring Exchange-Dominated Synthetic Layered Antiferromagnets: From Collective Magnetic Reversal to Exchange Bias

Not only since the progressive reduction of structure sizes in modern micro- and nanotechnology, surface and interface effects have played an ever-increasing role and nowadays often dominate the behavior of entire systems. Therefore, understanding the nature of surface and interface effects and being able to fully control them is of fundamental importance, in particular in modern thin-film technology. In this study, it is revealed how Co/Pt multilayer-based synthetic antiferromagnets (SAFs) with perpendicular magnetic anisotropy in the regime of dominating antiferromagnetic interlayer exchange can be employed to control the collective magnetic reversal via systematically altering surface and interface effects. The specifically designed samples and experiments highlight the superior tunability of synthetic systems as compared to their intrinsic stoichiometric counterparts, where the antiferromagnetism is directly tied to the indivisible discrete atomic nature and crystal structure of the materials. Thus, it is demonstrated that in SAFs, it becomes possible to energetically heal the broken magnetic symmetry at the surface, thereby enabling either on demand suppression or controlled enhancement of respective surface and interface effects, as demonstrated here in this study for the surface spin-flop and the exchange bias effect.

A magnetic shift register with out-of-plane magnetized layers

Using out-of-plane magnetized layers, a lateral shift register made from discrete elements is demonstrated. By carefully designing the in-plane shape of the elements which make up the shift register, both the position of nucleation of new domains and the coercivity of the element can be controlled. The dipole field from a neighboring element, placed tens of nanometers away, creates a bias field on the nucleation site, which can be used to create a NOT gate. By chaining these NOT gates together, a shift register can be created where data bits consisting of neighboring layers with aligned magnetization are propagated synchronously under a symmetric applied magnetic field. The operation of a 16 element shift register is shown, including field coupled data injection.

Three-dimensional nanomagnetism

Magnetic nanostructures are being developed for use in many aspects of our daily life, spanning areas such as data storage, sensing and biomedicine. Whereas patterned nanomagnets are traditionally two-dimensional planar structures, recent work is expanding nanomagnetism into three dimensions; a move triggered by the advance of unconventional synthesis methods and the discovery of new magnetic effects. In three-dimensional nanomagnets more complex magnetic configurations become possible, many with unprecedented properties. Here we review the creation of these structures and their implications for the emergence of new physics, the development of instrumentation and computational methods, and exploitation in numerous applications.

Nanoscale magnetic devices play a key role in modern technologies but current applications involve only 2D structures like magnetic discs. Here the authors review recent progress in the fabrication and understanding of 3D magnetic nanostructures, enabling more diverse functionalities.

Intra-wire coupling in segmented Ni/Cu nanowires deposited by electrodeposition

Segmented magnetic nanowires are a promising route for the development of three dimensional data storage techniques. Such devices require a control of the coercive field and the coupling mechanisms between individual magnetic elements. In our study, we investigate electrodeposited nanomagnets within host templates using vibrating sample magnetometry and observe a strong dependence between nanowire length and coercive field (25 nm-5 μm) and diameter (25-45 nm). A transition from a magnetization reversal through coherent rotation to domain wall propagation is observed at an aspect ratio of approximately 2. Our results are further reinforced via micromagnetic simulations and angle dependent hysteresis loops. The found behavior is exploited to create nanowires consisting of a fixed and a free segment in a spin-valve like structure. The wires are released from the membrane and electrically contacted, displaying a giant magnetoresistance effect that is attributed to individual switching of the coupled nanomagnets. We develop a simple analytical model to describe the observed switching phenomena and to predict stable and unstable regimes in coupled nanomagnets of certain geometries.

Systematic layer-by-layer characterization of multilayers for three-dimensional data storage and logic

Magnetic kink solitons are used as a probe to experimentally measure the layer-by-layer coercivity and interlayer coupling strength of an antiferromagnetically coupled perpendicularly magnetized Co multilayer. The magnetic response is well described by a nearest neighbor Ising macrospin model. By controlling the position of one, two or three solitons in the stack using globally applied magnetic fields, we successfully probe the switching of individual buried layers under different neighboring configurations, allowing us to access individual layer's characteristic parameters. We found the coercivity to increase dramatically up the multilayer, while the interlayer coupling strength decreased slightly. We corroborate these findings with scanning transmission electron microscopy images where a degrading quality of the multilayer is observed. This method provides a very powerful tool to characterize the quality of individual layers in complex multilayers, without the need for depth-sensitive magnetic characterization equipment.