Mechanism of strain-influenced quantum well thickness reduction in GaN/AlN short-period superlattices

2D-GaN/AlN Multiple Quantum Disks/Quantum Well Heterostructures for High-Power Electron-Beam Pumped UVC Emitters

This article describes GaN/AlN heterostructures for ultraviolet-C (UVC) emitters with multiple (up to 400 periods) two-dimensional (2D)-quantum disk/quantum well structures with the same GaN nominal thicknesses of 1.5 and 16 ML-thick AlN barrier layers, which were grown by plasma-assisted molecular-beam epitaxy in a wide range of gallium and activated nitrogen flux ratios (Ga/N₂*) on c-sapphire substrates. An increase in the Ga/N₂* ratio from 1.1 to 2.2 made it possible to change the 2D-topography of the structures due to a transition from the mixed spiral and 2D-nucleation growth to a purely spiral growth. As a result, the emission energy (wavelength) could be varied from 5.21 eV (238 nm) to 4.68 eV (265 nm) owing to the correspondingly increased carrier localization energy. Using electron-beam pumping with a maximum pulse current of 2 A at an electron energy of 12.5 keV, a maximum output optical power of 50 W was achieved for the 265 nm structure, while the structure emitting at 238 nm demonstrated a power of 10 W.

Multiple fields manipulation on nitride material structures in ultraviolet light-emitting diodes

As demonstrated during the COVID-19 pandemic, advanced deep ultraviolet (DUV) light sources (200-280 nm), such as AlGaN-based light-emitting diodes (LEDs) show excellence in preventing virus transmission, which further reveals their wide applications from biological, environmental, industrial to medical. However, the relatively low external quantum efficiencies (mostly lower than 10%) strongly restrict their wider or even potential applications, which have been known related to the intrinsic properties of high Al-content AlGaN semiconductor materials and especially their quantum structures. Here, we review recent progress in the development of novel concepts and techniques in AlGaN-based LEDs and summarize the multiple physical fields as a toolkit for effectively controlling and tailoring the crucial properties of nitride quantum structures. In addition, we describe the key challenges for further increasing the efficiency of DUV LEDs and provide an outlook for future developments.

The Peculiarities of Strain Relaxation in GaN/AlN Superlattices Grown on Vicinal GaN (0001) Substrate: Comparative XRD and AFM Study

Superlattices (SLs) consisting of symmetric layers of GaN and AlN have been investigated. Detailed X-ray diffraction and reflectivity measurements demonstrate that the relaxation of built-up strain in the films generally increases with an increasing number of repetitions; however, an apparent relaxation for subcritical thickness SLs is explained through the accumulation of Nagai tilt at each interface of the SL. Additional atomic force microscopy measurements reveal surface pit densities which appear to correlate with the amount of residual strain in the films along with the appearance of cracks for SLs which have exceeded the critical thickness for plastic relaxation. These results indicate a total SL thickness beyond which growth may be limited for the formation of high-quality coherent crystal structures; however, they may indicate a growth window for the reduction of threading dislocations by controlled relaxation of the epilayers.