Tunneling electroresistance in multiferroic heterostructures

Unravelling and controlling hidden imprint fields in ferroelectric capacitors

Ferroelectric materials have a spontaneous polarization that can point along energetically equivalent, opposite directions. However, when ferroelectric layers are sandwiched between different metallic electrodes, asymmetric electrostatic boundary conditions may induce the appearance of an electric field (imprint field, E_imp) that breaks the degeneracy of the polarization directions, favouring one of them. This has dramatic consequences on functionality of ferroelectric-based devices such as ferroelectric memories or photodetectors. Therefore, to cancel out the E_imp, ferroelectric components are commonly built using symmetric contact configuration. Indeed, in this symmetric contact configuration, when measurements are done under time-varying electric fields of relatively low frequency, an archetypical symmetric single-step switching process is observed, indicating E_imp ≈ 0. However, we report here on the discovery that when measurements are performed at high frequency, a well-defined double-step switching is observed, indicating the presence of E_imp. We argue that this frequency dependence originates from short-living head-to-head or tail-to-tail ferroelectric capacitors in the device. We demonstrate that we can modulate E_imp and the life-time of head-to-head or tail-to-tail polarization configurations by adjusting the polarization screening charges by suitable illumination. These findings are of relevance to understand the effects of internal electric fields on pivotal ferroelectric properties, such as memory retention and photoresponse.

Multifunctional magnetoelectric materials for device applications

Over the past decade magnetoelectric (ME) mutiferroic (MF) materials and their devices are one of the highest priority research topics that has been investigated by the scientific ferroics community to develop the next generation of novel multifunctional materials. These systems show the simultaneous existence of two or more ferroic orders, and cross-coupling between them, such as magnetic spin, polarisation, ferroelastic ordering, and ferrotoroidicity. Based on the type of ordering and coupling, they have drawn increasing interest for a variety of device applications, such as magnetic field sensors, nonvolatile memory elements, ferroelectric photovoltaics, nano-electronics etc. Since single-phase materials exist rarely in nature with strong cross-coupling properties, intensive research activity is being pursued towards the discovery of new single-phase multiferroic materials and the design of new engineered materials with strong magneto-electric (ME) coupling. This review article summarises the development of different kinds of multiferroic material: single-phase and composite ceramic, laminated composite and nanostructured thin films. Thin-film nanostructures have higher magnitude direct ME coupling values and clear evidence of indirect ME coupling compared with bulk materials. Promising ME coupling coefficients have been reported in laminated composite materials in which the signal to noise ratio is good for device fabrication. We describe the possible applications of these materials.

Effect of epitaxial strain on tunneling electroresistance in ferroelectric tunnel junctions

We report the effect of compressive strain on the tunneling electroresistance (TER) effect in BaTiO3/SrRuO3 (BTO/SRO) heterostructures. We find that epitaxial strain imposed by the mismatch of NdGaO3 and SrTiO3 lattice parameters with the BTO and SRO layers improves ferroelectric polarization of BTO and concurrently promotes the metallicity of the SRO films. While the enhanced polarization is beneficial for the TER magnitude, the reduced asymmetry in the tunneling barrier due to the shortened screening length of SRO is detrimental for the effect. Thus, a combined effect of strain on the polarization of the ferroelectric barrier and the screening properties of the electrodes needs to be taken into account when considering and predicting the TER effect in ferroelectric tunnel junctions.