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Bae J, Shin Y, Yoo H, Choi Y, Lim J, Jeon D, Kim I, Han M, Lee S. Quantum dot-integrated GaN light-emitting diodes with resolution beyond the retinal limit. Nat Commun 2022; 13:1862. [PMID: 35387996 PMCID: PMC8986835 DOI: 10.1038/s41467-022-29538-4] [Citation(s) in RCA: 14] [Impact Index Per Article: 7.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 02/24/2021] [Accepted: 03/21/2022] [Indexed: 11/11/2022] Open
Abstract
Near-eye display technology is a rapidly growing field owing to the recent emergence of augmented and mixed reality. Ultrafast response time, high resolution, high luminance, and a dynamic range for outdoor use are all important for non-pixelated, pupil-forming optics. The current mainstream technologies using liquid crystals and organic materials cannot satisfy all these conditions. Thus, finely patterned light-emissive solid-state devices with integrated circuits are often proposed to meet these requirements. In this study, we integrated several advanced technologies to design a prototype microscale light-emitting diode (LED) arrays using quantum dot (QD)-based color conversion. Wafer-scale epilayer transfer and the bond-before-pattern technique were used to directly integrate 5-µm-scale GaN LED arrays on a foreign silicon substrate. Notably, the lithography-level alignment with the bottom wafer opens up the possibility for ultrafast operation with circuit integration. Spectrally pure color conversion and solvent-free QD patterning were also achieved using an elastomeric topographical mask. Self-assembled monolayers were applied to selectively alter the surface wettability for a completely dry process. The final emissive-type LED array integrating QD, GaN, and silicon technology resulted in a 1270 PPI resolution that is far beyond the retinal limit. Augmented reality technologies typically rely on near-eye displays, which requires displays with very high resolutions. Here, Bae et al demonstrate a quantum-dot integrated GaN light emitting diode arrays with a pixels per inch resolution of 1270, well beyond the retinal limit.
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Affiliation(s)
- Junho Bae
- Department of Electronic Engineering, Kyung Hee University, Yongin, 17104, Republic of Korea
| | - Yuseop Shin
- Department of Electronic Engineering, Kyung Hee University, Yongin, 17104, Republic of Korea
| | - Hyungyu Yoo
- Department of Electronic Engineering, Kyung Hee University, Yongin, 17104, Republic of Korea.,Department of Electronics and Information Convergence Engineering, Kyung Hee University, Yongin, 17104, Republic of Korea
| | - Yongsu Choi
- Department of Electronic Engineering, Kyung Hee University, Yongin, 17104, Republic of Korea.,Department of Electronics and Information Convergence Engineering, Kyung Hee University, Yongin, 17104, Republic of Korea
| | - Jinho Lim
- Department of Electronic Engineering, Kyung Hee University, Yongin, 17104, Republic of Korea.,Department of Electronics and Information Convergence Engineering, Kyung Hee University, Yongin, 17104, Republic of Korea
| | - Dasom Jeon
- Department of Electronic Engineering, Kyung Hee University, Yongin, 17104, Republic of Korea.,Department of Electronics and Information Convergence Engineering, Kyung Hee University, Yongin, 17104, Republic of Korea
| | - Ilsoo Kim
- LG Display Research and Development Center, Seoul, 07796, Republic of Korea
| | - Myungsoo Han
- LG Display Research and Development Center, Seoul, 07796, Republic of Korea
| | - Seunghyun Lee
- Department of Electronic Engineering, Kyung Hee University, Yongin, 17104, Republic of Korea. .,Department of Electronics and Information Convergence Engineering, Kyung Hee University, Yongin, 17104, Republic of Korea.
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2
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Zeng P, Shu Z, Zhang S, Liang H, Zhou Y, Ba D, Feng Z, Zheng M, Wu J, Chen Y, Duan H. Fabrication of single-nanometer metallic gaps via spontaneous nanoscale dewetting. NANOTECHNOLOGY 2021; 32:205302. [PMID: 33571970 DOI: 10.1088/1361-6528/abe576] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/12/2023]
Abstract
Ultrasmall metallic nanogaps are of great significance for wide applications in various nanodevices. However, it is challenging to fabricate ultrasmall metallic nanogaps by using common lithographic methods due to the limited resolution. In this work, we establish an effective approach for successful formation of ultrasmall metallic nanogaps based on the spontaneous nanoscale dewetting effect during metal deposition. By varying the initial opening size of the exposed resist template, the influence of dewetting behavior could be adjusted and tiny metallic nanogaps can be obtained. We demonstrate that this method is effective to fabricate diverse sub-10 nm gaps in silver nanostructures. Based on this fabrication concept, even sub-5 nm metallic gaps were obtained. SERS measurements were performed to show the molecular detection capability of the fabricated Ag nanogaps. This approach is a promising candidate for sub-10 nm metallic gaps fabrication, thus possessing potential applications in nanoelectronics, nanoplasmonics, and nano-optoelectronics.
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Affiliation(s)
- Pei Zeng
- College of Mechanical and Vehicle Engineering, National Engineering Research Centre for High Efficiency Grinding, Hunan University, Changsha 410082, People's Republic of China
| | - Zhiwen Shu
- College of Mechanical and Vehicle Engineering, National Engineering Research Centre for High Efficiency Grinding, Hunan University, Changsha 410082, People's Republic of China
| | - Shi Zhang
- College of Mechanical and Vehicle Engineering, National Engineering Research Centre for High Efficiency Grinding, Hunan University, Changsha 410082, People's Republic of China
| | - Huikang Liang
- College of Mechanical and Vehicle Engineering, National Engineering Research Centre for High Efficiency Grinding, Hunan University, Changsha 410082, People's Republic of China
| | - Yuting Zhou
- College of Mechanical and Vehicle Engineering, National Engineering Research Centre for High Efficiency Grinding, Hunan University, Changsha 410082, People's Republic of China
| | - Dedong Ba
- Science and Technology on Vacuum Technology and Physics Laboratory, Lanzhou Institute of Physics, Lanzhou 730000, People's Republic of China
| | - Zhanzu Feng
- Science and Technology on Material Performance Evaluating in Space Environment Laboratory, Lanzhou Institute of Physics, Lanzhou 730000, People's Republic of China
| | - Mengjie Zheng
- Jihua Laboratory, Foshan 528000, People's Republic of China
| | - Jianhui Wu
- College of Mechanical and Vehicle Engineering, National Engineering Research Centre for High Efficiency Grinding, Hunan University, Changsha 410082, People's Republic of China
| | - Yiqin Chen
- College of Mechanical and Vehicle Engineering, National Engineering Research Centre for High Efficiency Grinding, Hunan University, Changsha 410082, People's Republic of China
| | - Huigao Duan
- College of Mechanical and Vehicle Engineering, National Engineering Research Centre for High Efficiency Grinding, Hunan University, Changsha 410082, People's Republic of China
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Cai H, Meng Q, Chen Q, Ding H, Dai Y, Li S, Chen D, Tan Q, Pan N, Zeng C, Qi Z, Liu G, Tian Y, Gao W, Wang X. Fabricating 3D Metastructures by Simultaneous Modulation of Flexible Resist Stencils and Basal Molds. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2020; 32:e2002570. [PMID: 32715527 DOI: 10.1002/adma.202002570] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/15/2020] [Revised: 06/23/2020] [Indexed: 06/11/2023]
Abstract
Metamaterials have gained much attention thanks to their extraordinary and intriguing optical properties beyond natural materials. However, universal high-resolution fabrications of 3D micro/nanometastructures with high-resolution remain a challenge. Here, a novel approach to fabricate sophisticated 3D micro/nanostructures with excellent robustness and precise controllability is demonstrated by simultaneously modulating of flexible resist stencils and basal molds. This method allows arbitrary manipulations of morphology, size, and orientation, as well as contact angles of the objects. Combined with a new alignment strategy of high-resolution, previously inaccessible architectures are fabricated with ultrahigh precision, leading to an excellent spectra response from the fabricated metastructures. This method provides a new possibility to realize true 3D metamaterial fabrications featuring high-resolution and direct-compatibility with broad planar lithography platforms.
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Affiliation(s)
- Hongbing Cai
- Hefei National Laboratory for Physical Sciences at the Microscale and Synergetic Innovation Center of Quantum Information & Quantum Physics, University of Science and Technology of China, Hefei, Anhui, 230026, China
- Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, Singapore, 637371, Singapore
- USTC Center for Micro- and Nanoscale Research and Fabrication, University of Science and Technology of China, Hefei, Anhui, 230026, China
| | - Qiushi Meng
- Hefei National Laboratory for Physical Sciences at the Microscale and Synergetic Innovation Center of Quantum Information & Quantum Physics, University of Science and Technology of China, Hefei, Anhui, 230026, China
- USTC Center for Micro- and Nanoscale Research and Fabrication, University of Science and Technology of China, Hefei, Anhui, 230026, China
| | - Qiang Chen
- Hefei National Laboratory for Physical Sciences at the Microscale and Synergetic Innovation Center of Quantum Information & Quantum Physics, University of Science and Technology of China, Hefei, Anhui, 230026, China
- USTC Center for Micro- and Nanoscale Research and Fabrication, University of Science and Technology of China, Hefei, Anhui, 230026, China
| | - Huaiyi Ding
- Hefei National Laboratory for Physical Sciences at the Microscale and Synergetic Innovation Center of Quantum Information & Quantum Physics, University of Science and Technology of China, Hefei, Anhui, 230026, China
| | - Yanmeng Dai
- Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, College of Optoelectronic Engineering, Shenzhen University, Shenzhen, 518060, China
| | - Sijia Li
- Hefei National Laboratory for Physical Sciences at the Microscale and Synergetic Innovation Center of Quantum Information & Quantum Physics, University of Science and Technology of China, Hefei, Anhui, 230026, China
| | - Disheng Chen
- Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, Singapore, 637371, Singapore
| | - Qinghai Tan
- Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, Singapore, 637371, Singapore
| | - Nan Pan
- Hefei National Laboratory for Physical Sciences at the Microscale and Synergetic Innovation Center of Quantum Information & Quantum Physics, University of Science and Technology of China, Hefei, Anhui, 230026, China
| | - Changgan Zeng
- Hefei National Laboratory for Physical Sciences at the Microscale and Synergetic Innovation Center of Quantum Information & Quantum Physics, University of Science and Technology of China, Hefei, Anhui, 230026, China
- Department of Physics, University of Science & Technology of China, Hefei, Anhui, 230027, China
| | - Zeming Qi
- National Synchrotron Radiation Laboratory, University of Science & Technology of China, Hefei, Anhui, 230027, China
| | - Gang Liu
- National Synchrotron Radiation Laboratory, University of Science & Technology of China, Hefei, Anhui, 230027, China
| | - Yangchao Tian
- National Synchrotron Radiation Laboratory, University of Science & Technology of China, Hefei, Anhui, 230027, China
| | - Weibo Gao
- Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, Singapore, 637371, Singapore
| | - Xiaoping Wang
- Hefei National Laboratory for Physical Sciences at the Microscale and Synergetic Innovation Center of Quantum Information & Quantum Physics, University of Science and Technology of China, Hefei, Anhui, 230026, China
- USTC Center for Micro- and Nanoscale Research and Fabrication, University of Science and Technology of China, Hefei, Anhui, 230026, China
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Yan X, Wei H. Strong plasmon-exciton coupling between lithographically defined single metal nanoparticles and monolayer WSe 2. NANOSCALE 2020; 12:9708-9716. [PMID: 32323700 DOI: 10.1039/d0nr01056a] [Citation(s) in RCA: 11] [Impact Index Per Article: 2.8] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
Strong coupling between surface plasmons and excitons leads to the formation of plexcitons with new energy states, providing a versatile platform for a range of frontier research subjects. Single plasmonic nanoparticles have recently attracted much attention for realizing strong coupling due to their small mode volume. However, the usually used chemically synthesized metal nanoparticles are unfavorable for accurately tailoring the surface plasmon resonances and adverse to the implementation of on-chip integration. Here, we report for the first time the realization of strong coupling between monolayer WSe2 and lithographically defined single metal nanoparticles. Focusing on gold nanobowties, the large Rabi splitting of 187 meV is achieved. The excitons around the nanogaps in the nanobowties contribute dominantly to the coupling strength, and the coupling strength is larger for smaller nanobowties due to the smaller mode volume. Moreover, the hybrid systems of monolayer WSe2 and gold nanoparticle monomers of nanorods, nanotriangles, and nanodisks are found to closely satisfy the criterion of strong coupling. The strong plasmon-exciton coupling realized by single plasmonic nanostructures fabricated by advanced nanofabrication techniques and monolayer semiconductors can provide new opportunities for manipulating strong light-matter interactions at the nanoscale and facilitate the development of plexciton-based nanodevices with ultrasmall footprints.
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Affiliation(s)
- Xiaohong Yan
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China. and School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Hong Wei
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China. and Songshan Lake Materials Laboratory, Dongguan 523808, China
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Gao L, Chen L, Wei H, Xu H. Lithographically fabricated gold nanowire waveguides for plasmonic routers and logic gates. NANOSCALE 2018; 10:11923-11929. [PMID: 29901054 DOI: 10.1039/c8nr01827h] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/14/2023]
Abstract
Fabricating plasmonic nanowire waveguides and circuits by lithographic fabrication methods is highly desired for nanophotonic circuitry applications. Here we report an approach for fabricating metal nanowire networks by using electron beam lithography and metal film deposition techniques. The gold nanowire structures are fabricated on quartz substrates without using any adhesion layer but coated with a thin layer of Al2O3 film for immobilization. The thermal annealing during the Al2O3 deposition process decreases the surface plasmon loss. In a Y-shaped gold nanowire network, the surface plasmons can be routed to different branches by controlling the polarization of the excitation light, and the routing behavior is dependent on the length of the main nanowire. Simulated electric field distributions show that the zigzag distribution of the electric field in the nanowire network determines the surface plasmon routing. By using two laser beams to excite surface plasmons in a Y-shaped nanowire network, the output intensity can be modulated by the interference of surface plasmons, which can be used to design Boolean logic gates. We experimentally demonstrate that AND, OR, XOR and NOT gates can be realized in three-terminal nanowire networks, and NAND, NOR and XNOR gates can be realized in four-terminal nanowire networks. This work takes a step toward the fabrication of on-chip integrated plasmonic circuits.
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Affiliation(s)
- Long Gao
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China.
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Substrate Oxide Layer Thickness Optimization for a Dual-Width Plasmonic Grating for Surface-Enhanced Raman Spectroscopy (SERS) Biosensor Applications. SENSORS 2017; 17:s17071530. [PMID: 28665308 PMCID: PMC5539500 DOI: 10.3390/s17071530] [Citation(s) in RCA: 11] [Impact Index Per Article: 1.6] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 06/02/2017] [Revised: 06/22/2017] [Accepted: 06/27/2017] [Indexed: 12/15/2022]
Abstract
This work investigates a new design for a plasmonic SERS biosensor via computational electromagnetic models. It utilizes a dual-width plasmonic grating design, which has two different metallic widths per grating period. These types of plasmonic gratings have shown larger optical enhancement than standard single-width gratings. The new structures have additional increased enhancement when the spacing between the metal decreases to sub-10 nm dimensions. This work integrates an oxide layer to improve the enhancement even further by carefully studying the effects of the substrate oxide thickness on the enhancement and reports ideal substrate parameters. The combined effects of varying the substrate and the grating geometry are studied to fully optimize the device’s enhancement for SERS biosensing and other plasmonic applications. The work reports the ideal widths and substrate thickness for both a standard and a dual-width plasmonic grating SERS biosensor. The ideal geometry, comprising a dual-width grating structure atop an optimal SiO2 layer thickness, improves the enhancement by 800%, as compared to non-optimized structures with a single-width grating and a non-optimal oxide thickness.
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7
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Chen Y, Bi K, Wang Q, Zheng M, Liu Q, Han Y, Yang J, Chang S, Zhang G, Duan H. Rapid Focused Ion Beam Milling Based Fabrication of Plasmonic Nanoparticles and Assemblies via "Sketch and Peel" Strategy. ACS NANO 2016; 10:11228-11236. [PMID: 28024375 DOI: 10.1021/acsnano.6b06290] [Citation(s) in RCA: 55] [Impact Index Per Article: 6.9] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/22/2023]
Abstract
Focused ion beam (FIB) milling is a versatile maskless and resistless patterning technique and has been widely used for the fabrication of inverse plasmonic structures such as nanoholes and nanoslits for various applications. However, due to its subtractive milling nature, it is an impractical method to fabricate isolated plasmonic nanoparticles and assemblies which are more commonly adopted in applications. In this work, we propose and demonstrate an approach to reliably and rapidly define plasmonic nanoparticles and their assemblies using FIB milling via a simple "sketch and peel" strategy. Systematic experimental investigations and mechanism studies reveal that the high reliability of this fabrication approach is enabled by a conformally formed sidewall coating due to the ion-milling-induced redeposition. Particularly, we demonstrated that this strategy is also applicable to the state-of-the-art helium ion beam milling technology, with which high-fidelity plasmonic dimers with tiny gaps could be directly and rapidly prototyped. Because the proposed approach enables rapid and reliable patterning of arbitrary plasmonic nanostructures that are not feasible to fabricate via conventional FIB milling process, our work provides the FIB milling technology an additional nanopatterning capability and thus could greatly increase its popularity for utilization in fundamental research and device prototyping.
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Affiliation(s)
| | - Kaixi Bi
- College of Science, National University of Defense Technology , Changsha 410073, People's Republic of China
| | - Qianjin Wang
- College of Engineering and Applied Sciences, Nanjing University , Nanjing 210093, People's Republic of China
| | | | | | - Yunxin Han
- College of Science, National University of Defense Technology , Changsha 410073, People's Republic of China
| | - Junbo Yang
- College of Science, National University of Defense Technology , Changsha 410073, People's Republic of China
| | - Shengli Chang
- College of Science, National University of Defense Technology , Changsha 410073, People's Republic of China
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Wei S, Zheng M, Xiang Q, Hu H, Duan H. Optimization of the particle density to maximize the SERS enhancement factor of periodic plasmonic nanostructure array. OPTICS EXPRESS 2016; 24:20613-20. [PMID: 27607665 DOI: 10.1364/oe.24.020613] [Citation(s) in RCA: 13] [Impact Index Per Article: 1.6] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/20/2023]
Abstract
Low-cost surface-enhanced Raman scattering (SERS) substrate with the largest possible enhancement factor is highly desirable for SERS-based sensing applications. In this work, we systematically investigated how the density of plasmonic nanostructures affects the intensity of SERS signal. By directly depositing of metallic layer on electron-beam-lithography defined dielectric nanoposts, plasmonic structures array with different densities were reliably fabricated for SERS measurements. Two main experimental phenomena were obtained: (1) the SERS intensity did not increase monotonically when increasing the density of plasmonic structures, and (2) these ultra-dense plasmonic structures resulted in the maximal SERS intensity. These results could be well explained based on finite-difference time domain (FDTD) simulations and provide robust experimental evidences to guide the design of the best possible SERS substrate.
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Liu K, Yu Z, Zhu X, Zhang S, Zou F, Zhu Y. A universal surface enhanced Raman spectroscopy (SERS)-active graphene cathode for lithium–air batteries. RSC Adv 2016. [DOI: 10.1039/c6ra23331g] [Citation(s) in RCA: 8] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 01/07/2023] Open
Abstract
A uniform SERS-active graphene electrode was used in lithium–oxygen batteries.
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Affiliation(s)
- Kewei Liu
- Department of Polymer Science
- The University of Akron
- Akron
- USA
| | - Zitian Yu
- Department of Polymer Science
- The University of Akron
- Akron
- USA
| | - Xiaowen Zhu
- Department of Polymer Science
- The University of Akron
- Akron
- USA
| | - Shuo Zhang
- Department of Polymer Science
- The University of Akron
- Akron
- USA
| | - Feng Zou
- Department of Polymer Science
- The University of Akron
- Akron
- USA
| | - Yu Zhu
- Department of Polymer Science
- The University of Akron
- Akron
- USA
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