Shubnikov-de Haas oscillations in p and n-type topological insulator (Bi x Sb1-x )2Te3

Epitaxial Growth and Characterization of Nanoscale Magnetic Topological Insulators: Cr-Doped (Bi0.4Sb0.6)2Te3

The exploration initiated by the discovery of the topological insulator (BixSb1-x)2Te3 has extended to unlock the potential of quantum anomalous Hall effects (QAHEs), marking a revolutionary era for topological quantum devices, low-power electronics, and spintronic applications. In this study, we present the epitaxial growth of Cr-doped (Bi0.4Sb0.6)2Te3 (Cr:BST) thin films via molecular beam epitaxy, incorporating various Cr doping concentrations with varying Cr/Sb ratios (0.025, 0.05, 0.075, and 0.1). High-quality crystalline of the Cr:BST thin films deposited on a c-plane sapphire substrate has been rigorously confirmed through reflection high-energy electron diffraction (RHEED), X-ray diffraction (XRD), and high-resolution transmission electron microscopy (HRTEM) analyses. The existence of a Cr dopant has been identified with a reduction in the lattice parameter of BST from 30.53 ± 0.05 to 30.06 ± 0.04 Å confirmed by X-ray diffraction, and the valence state of Cr verified by X-ray photoemission (XPS) at binding energies of ~573.1 and ~583.5 eV. Additionally, the influence of Cr doping on lattice vibration was qualitatively examined by Raman spectroscopy, revealing a blue shift in peaks with increased Cr concentration. Surface characteristics, crucial for the functionality of topological insulators, were explored via Atomic Force Microscopy (AFM), illustrating a sevenfold reduction in surface roughness as the Cr concentration increased from 0 to 0.1. The ferromagnetic properties of Cr:BST were examined by a superconducting quantum interference device (SQUID) with a magnetic field applied in out-of-plane and in-plane directions. The Cr:BST samples exhibited a Curie temperature (Tc) above 50 K, accompanied by increased magnetization and coercivity with increasing Cr doping levels. The introduction of the Cr dopant induces a transition from n-type ((Bi0.4Sb0.6)2Te3) to p-type (Cr:(Bi0.4Sb0.6)2Te3) carriers, demonstrating a remarkable suppression of carrier density up to one order of magnitude, concurrently enhancing carrier mobility up to a factor of 5. This pivotal outcome is poised to significantly influence the development of QAHE studies and spintronic applications.

A Green's function approach to topological insulator junctions with magnetic and superconducting regions

This work presents a Green's function approach, originally implemented in graphene with well-defined edges, to the surface of a strong 3D topological insulator with a sequence of proximitized superconducting (S) and ferromagnetic (F) surfaces. This consists of the derivation of the Green's functions for each region by the asymptotic solutions method and their coupling by a tight-binding Hamiltonian with the Dyson equation to obtain the full Green's functions of the system. These functions allow the direct calculation of the momentum-resolved spectral density of states, the identification of subgap interface states and the derivation of the differential conductance for a wide variety of configurations of the junctions. We illustrate the application of this method for some simple systems with two and three regions, finding the characteristic chiral state of the quantum anomalous Hall effect at the NF interfaces, and chiral Majorana modes at the NS interfaces. Finally, we discuss some geometrical effects present in three-region junctions such as weak Fabry-Pérot resonances and Andreev bound states.