Mukherjee D, Petrik P. Real-Time Ellipsometry at High and Low Temperatures.
ACS OMEGA 2023;
8:3684-3697. [PMID:
36743061 PMCID:
PMC9893259 DOI:
10.1021/acsomega.2c07438]
[Citation(s) in RCA: 1] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 11/20/2022] [Accepted: 12/29/2022] [Indexed: 06/18/2023]
Abstract
Among the many available real-time characterization methods, ellipsometry stands out with the combination of high sensitivity and high speed as well as nondestructive, spectroscopic, and complex modeling capabilities. The thicknesses of thin films such as the complex dielectric function can be determined simultaneously with precisions down to sub-nanometer and 10-4, respectively. Consequently, the first applications of high- and low-temperature real-time ellipsometry have been related to the monitoring of layer growth and the determination of optical properties of metals, semiconductors, and superconductors, dating back to the late 1960s. Ellipsometry has been ever since a steady alternative of nonpolarimetric spectroscopies in applications where quantitative information (e.g., thickness, crystallinity, porosity, band gap, absorption) is to be determined in complex layered structures. In this article the main applications and fields of research are reviewed.
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