Substrate effect on excitonic shift and radiative lifetime of two-dimensional materials

Ab Initio Predictions of Spin Relaxation, Dephasing, and Diffusion in Solids

Spin relaxation, dephasing, and diffusion are at the heart of spin-based information technology. Accurate theoretical approaches to simulate spin lifetimes (τs), determining how fast the spin polarization and phase information will be lost, are important to the understanding of the underlying mechanism of these spin processes, and invaluable in searching for promising candidates of spintronic materials. Recently, we develop a first-principles real-time density-matrix (FPDM) approach to simulate spin dynamics for general solid-state systems. Through the complete first-principles descriptions of light-matter interaction and scattering processes including electron-phonon, electron-impurity, and electron-electron scatterings with self-consistent spin-orbit coupling, as well as ab initio Landé g-factor, our method can predict τs at various conditions as a function of carrier density and temperature, under electric and magnetic fields. By employing this method, we successfully reproduce experimental results of disparate materials and identify the key factors affecting spin relaxation, dephasing, and diffusion in different materials. Specifically, we predict that germanene has long τs (∼100 ns at 50 K), a giant spin lifetime anisotropy, and spin-valley locking effect under electric fields, making it advantageous for spin-valleytronic applications. Based on our theoretical derivations and ab initio simulations, we propose a new useful electronic quantity, named spin-flip angle θ↑↓, for the understanding of spin relaxation through intervalley spin-flip scattering processes. Our method can be further applied to other emerging materials and extended to simulate exciton spin dynamics and steady-state photocurrents due to photogalvanic effect.

Tuning of excitons in phosphorene atomic chains

An universal scaling between the exciton binding energy and quasiparticle (QP) band gap was first discovered in two-dimensional (2D) semiconductors such as graphene derivatives, various transition materials dichalcogenides, and black phosphorus (Choiet al2015Phys. Rev. Lett.115066403; Jianget al2017Phys. Rev. Lett.118266401), and later extended to quasi one-dimensional (1D) systems such as carbon nanotubes and graphene nanoribbons. In this work we study the excitonic states in phosphorene atomic chains by using the exact diagonalization method and show that the linear scaling between the exciton binding energy (Ex) and QP shift (Δqs) can be easily tuned by the dielectric environment. In the presence of weak screening,Exis seen to increase withΔqsand exhibits a similar scaling as those 2D materials. As the screening becomes stronger, however, the dependence is found to be reversed, i.e.Exnow decreases whenΔqsincreases. More interestingly, we also reveal thatExmay even become nearly constant, independent on the system dimension andΔqswhen the screening reaches a certain strength. These abnormal scaling relations are attributed to the complex nature of excitons in the strongly correlated 1D system.