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For: So H, Pan D, Li L, Zhao J. Foreign-catalyst-free growth of InAs/InSb axial heterostructure nanowires on Si (111) by molecular-beam epitaxy. Nanotechnology 2017;28:135704. [PMID: 28256450 DOI: 10.1088/1361-6528/aa6051] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.4] [Reference Citation Analysis] [What about the content of this article? (0)] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/06/2023]

For:	So H, Pan D, Li L, Zhao J. Foreign-catalyst-free growth of InAs/InSb axial heterostructure nanowires on Si (111) by molecular-beam epitaxy. Nanotechnology 2017;28:135704. [PMID: 28256450 DOI: 10.1088/1361-6528/aa6051] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.4] [Reference Citation Analysis] [What about the content of this article? (0)] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/06/2023]

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(The first 100,000 artilces are displayed in RCA.)