Graphene growth through a recrystallization process in plasma enhanced chemical vapor deposition

Recent advances in graphene monolayers growth and their biological applications: A review

Development of two-dimensional high-quality graphene monolayers has recently received great concern owing to their enormous applications in diverging fields including electronics, photonics, composite materials, paints and coatings, energy harvesting and storage, sensors and metrology, and biotechnology. As a result, various groups have successfully developed graphene layers on different substrates by using the chemical vapor deposition method and explored their physical properties. In this direction, we have focused on the state-of-the-art developments in the growth of graphene layers, and their functional applications in biotechnology. The review starts with the introduction, which contains outlines about the graphene and their basic characteristics. A brief history and inherent applications of graphene layers followed by recent developments in growth and properties are described. Then, the application of graphene layers in biodevices is reviewed. Finally, the review is summarized with perspectives and future challenges along with the scope for future technological applications.

Direct growth of graphene on Ge(100) and Ge(110) via thermal and plasma enhanced CVD

The integration of graphene into CMOS compatible Ge technology is in particular attractive for optoelectronic devices in the infrared spectral range. Since graphene transfer from metal substrates has detrimental effects on the electrical properties of the graphene film and moreover, leads to severe contamination issues, direct growth of graphene on Ge is highly desirable. In this work, we present recipes for a direct growth of graphene on Ge via thermal chemical vapor deposition (TCVD) and plasma-enhanced chemical vapor deposition (PECVD). We demonstrate that the growth temperature can be reduced by about 200 °C in PECVD with respect to TCVD, where usually growth occurs close to the melting point of Ge. For both, TCVD and PECVD, hexagonal and elongated morphology is observed on Ge(100) and Ge(110), respectively, indicating the dominant role of substrate orientation on the shape of graphene grains. Interestingly, Raman data indicate a compressive strain of ca. − 0.4% of the graphene film fabricated by TCVD, whereas a tensile strain of up to + 1.2% is determined for graphene synthesized via PECVD, regardless the substrate orientation. Supported by Kelvin probe force measurements, we suggest a mechanism that is responsible for graphene formation on Ge and the resulting strain in TCVD and PECVD.