Low-temperature synthesis and electrocatalytic application of large-area PtTe2 thin films

Chiral Quantum Materials: When Chemistry Meets Physics

Chirality is a fundamental property of nature with relevance in biochemistry and physics, particularly in the field of catalysis. Understanding the mechanisms underlying chirality transfer is crucial for advancing the knowledge of chiral-related catalysis. Chiral quantum materials with intriguing chirality-dependent electronic properties, such as spin-orbital coupling (SOC) and exotic spin/orbital angular momentum (SAM/OAM), open novel avenues for linking solid-state topologies with chiral catalysis. In this review, the growth of topological homochiral crystals (THCs) is described, and their applications in heterogeneous catalysis, including hydrogen evolution reaction (HER), oxygen electrocatalysis, and asymmetric catalysis are summarized. A possible link between chirality-dependent electronic properties and heterogeneous catalysis is discussed. Finally, existing challenges in this field are highlighted, and a brief outlook on the impact of THCs on the overarching chemical-physical research is presented.

Toward Perfect Surfaces of Transition Metal Dichalcogenides with Ion Bombardment and Annealing Treatment

Layered transition metal dichalcogenides (TMDs) are two-dimensional materials exhibiting a variety of unique features with great potential for electronic and optoelectronic applications. The performance of devices fabricated with mono or few-layer TMD materials, nevertheless, is significantly affected by surface defects in the TMD materials. Recent efforts have been focused on delicate control of growth conditions to reduce the defect density, whereas the preparation of a defect-free surface remains challenging. Here, we show a counterintuitive approach to decrease surface defects on layered TMDs: a two-step process including Ar ion bombardment and subsequent annealing. With this approach, the defects, mainly Te vacancies, on the as-cleaved PtTe₂ and PdTe₂ surfaces were decreased by more than 99%, giving a defect density <1.0 × 10¹⁰ cm^-2, which cannot be achieved solely with annealing. We also attempt to propose a mechanism behind the processes.

Air-stable van der Waals PtTe2 conductors with high current-carrying capacity and strong spin-orbit interaction

High-performance van der Waals (vdW) integrated electronics and spintronics require reliable current-carrying capacity. However, it is challenging to achieve high current density and air-stable performance using vdW metals owing to the fast electrical breakdown triggered by defects or oxidation. Here, we report that spin-orbit interacted synthetic PtTe₂ layers exhibit significant electrical reliability and robustness in ambient air. The 4-nm-thick PtTe₂ synthesized at a low temperature (∼400°C) shows intrinsic metallic transport behavior and a weak antilocalization effect attributed to the strong spin-orbit scattering. Remarkably, PtTe₂ sustains a high current density approaching ≈31.5 MA cm⁻², which is the highest value among electrical interconnect candidates under oxygen exposure. Electrical failure is caused by the Joule heating of PtTe₂ rather than defect-induced electromigration, which was achievable by the native TeO_x passivation. The high-quality growth of PtTe₂ and the investigation of its transport behaviors lay out essential foundations for the development of emerging vdW spin-orbitronics.

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The synthesized PtTe₂ had a self-passivated surface under exposure to air

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Magnetoconductance study proved the realization of a 2D confined quantum system

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PtTe₂ sustained a remarkably high current density (∼31.5 MA cm⁻²) under air atmosphere

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The native TeO_x passivation retarded the defect-induced electromigration of PtTe₂

Heterogeneous Pd-PdO mesoporous film for ammonia electrosynthesis

Exploring cost-effective and highly active electrocatalysts is of great significance for sustainable electrochemical NH₃synthesis. Palladium (Pd)-based catalysts have been unanimously considered as one of the most efficient catalysts for the nitrogen reduction reaction (NRR). Herein, self-supported mesoporous Pd film with partial oxidation on Ni foam (mPd-PdO/NF) was synthesized through the micelle-assisted chemical replacement method coupled with air oxidation under 260 °C, and the mPd-PdO/NF electrocatalyst exhibited superior NRR performance with the maximum values ofr_NH3(24.8 mg h^-1mg_cat.^-1) and FE (16.64%) were obtained at -0.1 V, relative to the single counterparts (mPd/NF and mPdO/NF). It is proposed that both metallic Pd and its oxide domains when co-existing with a phase boundary between them can facilitate nitrogen activation and hydrogenation, resulting in an enhanced NRR performance. This work provides an inspiring strategy for the rational design of highly active and durable metal-metal-oxide nanoarchitectonics for ammonia electrosynthesis.

MBE-grown ultrathin PtTe2 films and their layer-dependent electronic structures

2D platinum ditelluride (PtTe₂) has received significant attention for 2D photodetector applications due to its novel physical properties. One of the critical factors that affect device performance is the film quality. Here, using molecular beam epitaxy, we investigate the role of growth temperature in determining the film quality of PtTe₂ on highly oriented pyrolytic graphite, and unveil its layer-dependent electronic properties by X-ray photoelectron spectroscopy, Raman spectroscopy, and scanning tunneling microscopy/spectroscopy (STM/STS), as well as density functional theory (DFT) calculations. At low growth temperature (≤250 °C), the PtTe₂ film prefers a stack of the monolayer and bilayer, while at ≈300 °C large-area continuous bilayer films are formed. In contrast, high growth temperature (>300 °C) leads to the formation of thick films with high Te deficiency and poor crystallinity. Theoretical calculations confirm the higher thermal stability of bilayer PtTe₂ over other layer numbers above a critical crystal size of ≈100 nm². STS shows that PtTe₂ is a semiconductor in the monolayer with a bandgap of 0.80 ± 0.05 eV, and changes to a semimetal from the bilayer. DFT calculations support our experimental results and suggest an indirect bandgap structure of the monolayer. This work provides a systematic study of the layer-dependent electronic structure of 2D PtTe₂, and demonstrates that with appropriate substrate and growth temperature choices, high-quality ultrathin PtTe₂ films can be obtained, important for device applications.

Interface dependence of electrical contact and graphene doping in graphene/XPtY (X, Y = S, Se, and Te) heterostructures

The electrical contact and graphene (Gr) doping for Gr/XPtY (X, Y = S, Se, and Te) van der Waals (vdW) heterostructures are studied by using first-principles methods. The intrinsic electronic properties of Gr and PtXY are preserved due to the weak vdW interactions. We find that the types of interfacial electrical contact and Gr doping are closely related to the interface chalcogen atoms. The n-type Ohmic contact is formed in the Gr/SPtY (Y = S, Se, and Te) systems. The n-type and p-type Schottky contacts are realized in the Gr/SePtY and Gr/TePtY systems, respectively. The physical mechanism of different contact types can be analyzed based on the charge transfer between the Gr and XPtY layers. For all the heterostructures, the contact type and Schottky barrier height can be effectively modulated by the external electric field and interlayer coupling. The Gr doping type and charge-carrier concentration are also investigated. The p-doping, p-doping, and n-doping are obtained in Gr for the Gr/SPtY, Gr/SePtY, and Gr/TePtY systems, respectively. The highest carrier concentration of the Gr layer can reach 1.69 × 10¹³ cm^-2 for the Gr/TePtTe system. The results indicate that Gr/XPtY heterostructures are potential candidates for improving the performance of high-efficiency nano electronic devices.

Recent progress in Van der Waals 2D PtSe2

As a new member in two-dimensional (2D) transition metal dichalcogenides (TMDCs) family, platinum diselenium (PtSe₂) has many excellent properties, such as the layer-dependent band gap, high carrier mobility, high photoelectrical coupling, broadband response, etc, thus it shows good promising application in room temperature photodetectors, broadband photodetectors, transistors and other fields. Furthermore, compared with other TMDCs, PtSe₂is chemical inert in ambient, showing nano-devices potential with higher performance and stability. However, up to now, the synthesis and its device applications are in its early stage. This review systematically summarized the state of the art of PtSe₂from its structure, property, synthesis and potential application. Finally, the current challenges and future perspectives are outlined for the applications of 2D PtSe₂.

Synthesis and characterisation of thin-film platinum disulfide and platinum sulfide

Group-10 transition metal dichalcogenides (TMDs) are rising in prominence within the highly innovative field of 2D materials. While PtS₂ has been investigated for potential electronic applications, due to its high charge-carrier mobility and strongly layer-dependent bandgap, it has proven to be one of the more difficult TMDs to synthesise. In contrast to most TMDs, Pt has a significantly more stable monosulfide, the non-layered PtS. The existence of two stable platinum sulfides, sometimes within the same sample, has resulted in much confusion between the materials in the literature. Neither of these Pt sulfides have been thoroughly characterised as-of-yet. Here we utilise time-efficient, scalable methods to synthesise high-quality thin films of both Pt sulfides on a variety of substrates. The competing nature of the sulfides and limited thermal stability of these materials is demonstrated. We report peak-fitted X-ray photoelectron spectra, and Raman spectra using a variety of laser wavelengths, for both materials. This systematic characterisation provides a guide to differentiate between the sulfides using relatively simple methods which is essential to enable future work on these interesting materials.

Surface Modification and Subsequent Fermi Density Enhancement of Bi(111)

Defects introduced to the surface of Bi(111) break the translational symmetry and modify the surface states locally. We present a theoretical and experimental study of the 2D defects on the surface of Bi(111) and the states that they induce. Bi crystals cleaved in ultrahigh vacuum (UHV) at low temperature (110 K) and the resulting ion-etched surface are investigated by low-energy electron diffraction (LEED), X-ray photoelectron spectroscopy, ultraviolet photoelectron spectroscopy (UPS), and scanning tunneling microscopy (STM) as well as spectroscopy (STS) techniques in combination with density functional theory (DFT) calculations. STS measurements of cleaved Bi(111) reveal that a commonly observed bilayer step edge has a lower density of states (DOS) around the Fermi level as compared to the atomic-flat terrace. Following ion bombardment, the Bi(111) surface reveals anomalous behavior at both 110 and 300 K: Surface periodicity is observed by LEED, and a significant increase in the number of bilayer step edges and energetically unfavorable monolayer steps is observed by STM. It is suggested that the newly exposed monolayer steps and the type A bilayer step edges result in an increase to the surface Fermi density as evidenced by UPS measurements and the Kohn-Sham DOS. These states appear to be thermodynamically stable under UHV conditions.

Electronic and structural characterisation of polycrystalline platinum disulfide thin films

We employ a combination of scanning tunnelling microscopy (STM) and scanning tunnelling spectroscopy (STS) to investigate the properties of layered PtS₂, synthesised via thermally assisted conversion (TAC) of a metallic Pt thin film. STM measurements reveal the 1T crystal structure of PtS₂, and the lattice constant is determined to be 3.58 ± 0.03 Å. STS allowed the electronic structure of individual PtS₂ crystallites to be directly probed and a bandgap of ∼1.03 eV was determined for a 3.8 nm thick flake at liquid nitrogen temperature. These findings substantially expand understanding of the atomic and electronic structure of PtS₂ and indicate that STM is a powerful tool capable of locally probing non-uniform polycrystalline films, such as those produced by TAC. Prior to STM/STS measurements the quality of synthesised TAC PtS₂ was analysed by X-ray photoelectron spectroscopy (XPS) and Raman spectroscopy. These results are of relevance to applications-focussed studies centred on PtS₂ and may inform future efforts to optimise the synthesis conditions for thin film PtS₂.

Semiconducting thin-film polycrystalline PtS₂ is characterised by atomically resolved scanning tunnelling microscopy and spectroscopy.