Effect of carbon doping on electromechanical response of boron nitride nanosheets

Thermal expansion of boron nitride nanotubes and additively manufactured ceramic nanocomposites

Controlling the thermal expansion of ceramic materials is important for many of their applications that involve high-temperature processing and/or working conditions. In this study, we investigate the thermal expansion properties of additively manufactured alumina that is reinforced with boron nitride nanotubes (BNNTs) over a broad temperature range, from room temperature to 900 °C. The coefficient of thermal expansion (CTE) of the BNNT-alumina nanocomposite increases with temperature but decreases with an increase in BNNT loading. The introduction of 0.6% BNNTs results in an approximate 16% reduction in the CTE of alumina. The observed significant CTE reduction of ceramics is attributed to the BNNT's low CTE and ultrahigh Young's modulus, and effective interfacial load transfer at the BNNT-ceramic interface. Micromechanical analysis, based onin situRaman measurements, reveals the transition of thermal-expansion-induced interface straining of nanotubes, which shifts from compression to tension inside the ceramic matrix under thermal loadings. This study provides valuable insights into the thermomechanical behavior of BNNT-reinforced ceramic nanocomposites and contributes to the optimal design of ceramic materials with tunable and zero CTE.

Enhancing piezoelectric performance of CNTs through B and N substitution under combined mechanical loads: insights from MD simulations

The piezoelectric properties of carbon nanotubes (CNTs) doped with boron (B) and nitrogen (N) were studied using the classical molecular dynamics (MD) simulation software package large scale atomic/molecular massively parallel simulator. The interactions among the nanotube atoms C, N, and B were calculated using the Tersoff potential. MD simulations were performed to observe the changes in the piezoelectric coefficient of the doped CNTs under loading conditions like tension, torsion, and a combination of both. We considered a wide range of chirality to determine the influence of structural variation on the piezoelectric effect. The study revealed that B-CNTs exhibit superior piezoelectric coefficients compared to N-CNTs, indicating the significant role of dopant type. Moreover, under tensile loading, zigzag-oriented B-CNTs showed higher piezoelectric coefficients with a maximume33= 0.2441 C m-2, whereas under torsional loading, armchair-oriented B-CNTs showed enhanced response with a maximume36= 0.0564 C m-2. A notable observation was that under combined loading conditions (tensile and torsional), the piezoelectric behavior of the B-CNTs was dependent on the nanotube's chirality and did not yield a linear additive response. The polarization induced under combined loading in most of the doped CNTs is significantly higher than the sum of polarization generated under tensile and torsional loading conditions. This behavior suggests that the overall piezoelectric effect under combined loading can be enhanced, which emphasizes the need for an approach to optimize the mechanical loading condition. The results showcase the potential of B-/N-CNTs to be engineered for efficient performance by demonstrating that tailored mechanical loading can enhance the piezoelectric responses in doped CNTs, opening a pathway for highly functional and efficient nanoscale piezoelectric devices.

Structural evolution of in-plane hybrid graphene/hexagonal boron nitride heterostructure upon heating

In-plane hybrid graphene/hexagonal boron nitride (h-BN) heterostructure (graphene/hBN/graphene) is studied via molecular dynamics simulation. The initial configuration (6400-atom graphene/6200-atom h-BN/6400-atom graphene) is heated up from 50 K to 7500 K via Tersoff potential. To study the structural evolution, some thermal dynamics quantities are calculated such as the coordination number, the total energy per atom, the heat capacity, the angular distribution, and the distribution of rings. Some main results are calculated and presented as follows: i) The sudden increase of total energy per atom at the melting point (5500 K) exhibits the first order phase transition from the crystalline state to a liquid state of the hybrid graphene/h-BN/graphene heterostructure; ii) The heat capacity shows two peaks. The first peak (at 5500 K) represents the phase transition from the crystalline to a liquid states while the second one (at 6300 K) represents the formation of gaseous atoms of B and N in the h-BN sheet; iii) The coordination number of three decreases dramatically at temperature of 5500 K (about 10% lefts for each type of atoms) leading to the formation of the first peak in the graph of the heat capacity. The coordination number of zero for B and N in the h-BN layer increases significantly (over 55%) at 6300 K causing the formation of the second peak in the graph of the heat capacity; iv) The influence of the relative number of atoms of h-BN to graphene in the hybrid graphene/h-BN/graphene heterostructure on the structural evolution upon heating is considered as follows. The number of atoms in the graphene sheets remains constant (6400 atoms per sheet) while the one of the h-BN sheet varies in size (780, 1560, 3120, 4680, 5490, 5880, 6080, and 6200 atoms). The results show that although the phase transition is still the first order type, the phase transition temperature decreases as the size of the h-BN layer in the hybrid heterostructure increases.

Investigation of unified impact of Ti adatom and N doping on hydrogen gas adsorption capabilities of defected graphene sheets

In this work, we studied the hydrogen adsorption capabilities of functionalized graphene sheets containing a variety of defects (D-G) via molecular dynamics (MD) simulations that govern the mechanisms involved in hydrogen adsorption. Specifically, the graphene sheets containing monovacancy (MV), Stone-Wales (SW), and multiple double vacancy (DV) defects were functionalized with Ti and N atoms to enhance their hydrogen adsorption capacity. We measured the adsorption capacities of the N-/D-G sheets with varying concentrations of Ti adatoms at 300 K and 77 K temperatures and various pressures. Our study revealed that the increasing concentration of Ti adatoms on the D-G sheets led to a significant improvement in the hydrogen adsorption capacity of the graphene sheets. The DV(III)-G sheets showed the maximum adsorption capacity at 300 K because the DV(III)-G sheets had a small number of large-sized pores that bind hydrogen with high binding energy. Thus, hydrogen remained adsorbed even at higher temperatures (300 K). The N doping on the D-G sheets initially reduced their hydrogen adsorption capabilities; however, the N-D-G sheets enhanced their hydrogen adsorption capacity with the increasing concentrations of Ti adatoms. Compared to all other defect types, the Ti-N-DV(III)-G sheet with a Ti concentration of 10.5% showed a hydrogen uptake of 5.5 wt% at 300 K and 100 bar pressure. Thus, the N doping and Ti implantations improved the hydrogen storage capabilities of the graphene sheets, and these findings helped design solid-state hydrogen storage systems operating at ambient conditions and moderate pressure ranges.