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For: Gan KJ, Liu PT, Ruan DB, Hsu CC, Chiu YC, Sze SM. Effect of tungsten doping on the variability of InZnO conductive-bridging random access memory. Nanotechnology 2021;32:035203. [PMID: 33022668 DOI: 10.1088/1361-6528/abbeab] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [What about the content of this article? (0)] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]

For:	Gan KJ, Liu PT, Ruan DB, Hsu CC, Chiu YC, Sze SM. Effect of tungsten doping on the variability of InZnO conductive-bridging random access memory. Nanotechnology 2021;32:035203. [PMID: 33022668 DOI: 10.1088/1361-6528/abbeab] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [What about the content of this article? (0)] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]

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(The first 100,000 artilces are displayed in RCA.)