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Mondal D, Datta S, Jana D. Navigating the evolution of two-dimensional carbon nitride research: integrating machine learning into conventional approaches. Phys Chem Chem Phys 2025; 27:4531-4566. [PMID: 39935374 DOI: 10.1039/d4cp04309j] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 02/13/2025]
Abstract
Carbon nitride research has reached a promising point in today's research endeavours with diverse applications including photocatalysis, energy storage, and sensing due to their unique electronic and structural properties. Recent advances in machine learning (ML) have opened new avenues for exploring and optimizing the potential of these materials. This study presents a comprehensive review of the integration of ML techniques in carbon nitride research with an introduction to CN classifications and recent advancements. We discuss the methodologies employed, such as supervised learning, unsupervised learning, and reinforcement learning, in predicting material properties, optimizing synthesis conditions, and enhancing performance metrics. Key findings indicate that ML algorithms can significantly reduce experimental trial-and-error, accelerate discovery processes, and provide deeper insights into the structure-property relationships of carbon nitride. The synergistic effect of combining ML with traditional experimental approaches is highlighted, showcasing studies where ML driven models have successfully predicted novel carbon nitride compositions with enhanced functional properties. Future directions in this field are also proposed, emphasizing the need for high-quality datasets, advanced ML models, and interdisciplinary collaborations to fully realize the potential of carbon nitride materials in next-generation technologies.
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Affiliation(s)
- Deep Mondal
- Department of Physics, University of Calcutta, 92 A. P. C. Road, Kolkata-700009, India
| | - Sujoy Datta
- Kadihati KNM High School, P.O. Ganti, Kolkata-700132, India.
| | - Debnarayan Jana
- Department of Physics, University of Calcutta, 92 A. P. C. Road, Kolkata-700009, India
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2
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Bafekry A, Fadlallah MM, Faraji M, Khan SH, Jappor HR, Shokri B, Ghergherehchi M, Chang GS. Metal to semiconductor switching in the AgTe monolayer via decoration with alkali metal and alkaline earth metal atoms: a first-principles perspective. Phys Chem Chem Phys 2024; 26:11056-11063. [PMID: 38529535 DOI: 10.1039/d3cp05360a] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 03/27/2024]
Abstract
In this work, employing first-principles calculations, we systematically investigate the atomic structure and electronic and optical properties of the AgTe monolayer, as well as the impact of alkali metal (Li, Na, K) and alkaline earth metal (Be, Mg, Ca) atoms decoration. The AgTe monolayer exhibits metallic characteristics. When Li, Na, K, and Mg atoms are decorated on the AgTe monolayer, the decorated AgTe monolayers are dynamically stable. In contrast, with Be and Ca atoms, the decorated structures are found to be dynamically unstable. Interestingly, the decoration of Li, Na, and K atoms into the AgTe monolayer can open the band gaps in the decorated Li-, Na- and K-AgTe monolayers around the Fermi level, leading to the actualization of metal-to-semiconductor transitions. In contrast, the decorated Mg-AgTe monolayer maintains its metallic characteristic. The highest electron and hole mobilities are achieved in the Na-AgTe monolayer among the decorated structures, suggesting the applicability of this structure in photovoltaic applications. The optical study shows that Li-, Na- and K-decorated AgTe monolayers have improved light absorption in the visible light region. Consequently, our findings shed light on the decoration of these 2D material monolayers and can potentially enhance and motivate studies in producing these monolayers for current nanodevices and future applications.
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Affiliation(s)
- A Bafekry
- Department of Physics, Shahid Beheshti University, 19839-63113, Tehran, Iran.
| | - M M Fadlallah
- Department of Physics, Faculty of Science, Benha University, 13518 Benha, Egypt
| | - M Faraji
- Micro and Nanotechnology Graduate Program, TOBB University of Economics and Technology, Sogutozu Caddesi No. 43 Sogutozu, 06560, Ankara, Turkey
| | - S Hasan Khan
- Department of Electrical and Electronic Engineering (EEE), Khulna University of Engineering & Technology (KUET), Khulna-9203, Bangladesh
| | - H R Jappor
- Department of Physics, College of Education for Pure Sciences, University of Babylon, Hilla, Iraq
| | - Babak Shokri
- Department of Physics, Shahid Beheshti University, 19839-63113, Tehran, Iran.
- Department of Physics and Laser-Plasma Research Institute, Shahid Beheshti University, Evin, 19839, Tehran, Iran
| | - M Ghergherehchi
- Department of Electrical and Computer Engineering, Sungkyunkwan University, 16419 Suwon, Korea.
| | - Gap Soo Chang
- Department of Physics and Engineering Physics, University of Saskatchewan, Saskatoon, SK S7N5E2, Canada
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3
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Chen XW, Lin ZZ, Li XM. Biphenylene network as sodium ion battery anode material. Phys Chem Chem Phys 2023; 25:4340-4348. [PMID: 36689257 DOI: 10.1039/d2cp04752g] [Citation(s) in RCA: 8] [Impact Index Per Article: 4.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 01/17/2023]
Abstract
Sodium ion batteries possess several advantages for large-scale energy storage, such as low cost and enhanced safety. However, graphite or other anode materials are not satisfactory because the large radius of Na+ hinders their embedding and removal in the charge and discharge processes. Recently, a biphenylene network (BPN), a two-dimensional (2D) carbon allotrope, has been synthesized. In this paper, we reveal the potential possibility of BPN as a Na storage material. The theoretical results indicate the advantages of BPN as a sodium battery anode. The maximum specific capacity (413 mA h g-1) is larger than that of the graphite-Li system (372 mA h g-1). With low Na+ diffusion barrier (<0.6 eV) and small volume expansion in the charging process (∼26%), BPN presents superiority to the graphite-Na system. Our findings show new insights into Na storage in BPN and provide guidance for the use of a BPN anode in sodium ion batteries.
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Affiliation(s)
- Xin-Wei Chen
- School of Physics, Xidian University, Xi'an 710071, China.
| | - Zheng-Zhe Lin
- School of Physics, Xidian University, Xi'an 710071, China.
| | - Xi-Mei Li
- School of Physics, Xidian University, Xi'an 710071, China.
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Theoretical prediction of two-dimensional BC 2X (X = N, P, As) monolayers: ab initio investigations. Sci Rep 2022; 12:22269. [PMID: 36564522 PMCID: PMC9789139 DOI: 10.1038/s41598-022-26805-8] [Citation(s) in RCA: 18] [Impact Index Per Article: 6.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 03/04/2022] [Accepted: 12/20/2022] [Indexed: 12/24/2022] Open
Abstract
In this work, novel two-dimensional BC[Formula: see text]X (X = N, P, As) monolayers with X atoms out of the B-C plane, are predicted by means of the density functional theory. The structural, electronic, optical, photocatalytic and thermoelectric properties of the BC[Formula: see text]X monolayers have been investigated. Stability evaluation of the BC[Formula: see text]X single-layers is carried out by phonon dispersion, ab-initio molecular dynamics (AIMD) simulation, elastic stability, and cohesive energies study. The mechanical properties reveal all monolayers considered are stable and have brittle nature. The band structure calculations using the HSE06 functional reveal that the BC[Formula: see text]N, BC[Formula: see text]P and BC[Formula: see text]As are semiconducting monolayers with indirect bandgaps of 2.68 eV, 1.77 eV and 1.21 eV, respectively. The absorption spectra demonstrate large absorption coefficients of the BC[Formula: see text]X monolayers in the ultraviolet range of electromagnetic spectrum. Furthermore, we disclose the BC[Formula: see text]N and BC[Formula: see text]P monolayers are potentially good candidates for photocatalytic water splitting. The electrical conductivity of BC[Formula: see text]X is very small and slightly increases by raising the temperature. Electron doping may yield greater electric productivity of the studied monolayers than hole doping, as indicated by the larger power factor in the n-doped region compared to the p-type region. These results suggest that BC[Formula: see text]X (X = N, P, As) monolayers represent a new promising class of 2DMs for electronic, optical and energy conversion systems.
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Mechanical properties of diboron-porphyrin sheet under strain: A density functional theory study. J INDIAN CHEM SOC 2022. [DOI: 10.1016/j.jics.2022.100629] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022]
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6
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Feng L, Zhang X, Zheng Q, Nie Y, Xiang G. 2D multifunctional SiAs 2/GeAs 2van der Waals heterostructure. NANOTECHNOLOGY 2022; 33:415704. [PMID: 34911044 DOI: 10.1088/1361-6528/ac434f] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/28/2021] [Accepted: 12/15/2021] [Indexed: 06/14/2023]
Abstract
The structural and electronic properties of two-dimensional (2D) SiAs2/GeAs2van der Waals heterostructure (vdWH) and its applications are investigated by combing first-principles calculations and Silvaco Atlas simulations. The stable SiAs2/GeAs2vdWH exhibits an indirect bandgap of 0.99 eV in type II band alignment for light detection and energy harvesting. The vdWH can exhibit a direct bandgap up to 0.66 eV by applying an appropriate electric field (Eext). Due to theEextinduced charge redistribution, its band alignment can be transformed from type II to type I for light-emitting. Further simulation shows that the band alignment of SiAs2/GeAs2vdWH can be tuned back and forth between type II and type I by gate voltage in a single field-effect transistor for multiple functional applications. These results may be useful for applications of the SiAs2/GeAs2heterostructure in future electronic and optoelectronic devices.
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Affiliation(s)
- Leihao Feng
- College of Physics, Sichuan University, Chengdu, 610065, Sichuan Province, People's Republic of China
| | - Xi Zhang
- College of Physics, Sichuan University, Chengdu, 610065, Sichuan Province, People's Republic of China
| | - Quan Zheng
- College of Physics, Sichuan University, Chengdu, 610065, Sichuan Province, People's Republic of China
| | - Ya Nie
- College of Physics, Sichuan University, Chengdu, 610065, Sichuan Province, People's Republic of China
| | - Gang Xiang
- College of Physics, Sichuan University, Chengdu, 610065, Sichuan Province, People's Republic of China
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Li Y, Shen Y, Fang Q, Yang X, Zhang S, Liu S, Chen L, Xu S. Computational insights into structural, electronic and optical properties of Al0.5Ga0.5N nanowire with different diameters. Chem Phys Lett 2022. [DOI: 10.1016/j.cplett.2022.139597] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/03/2022]
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Bafekry A, Fadlallah MM, Faraji M, Shafique A, Jappor HR, Abdolhoseini Sarsari I, Ang YS, Ghergherehchi M. Two-dimensional penta-like PdPSe with a puckered pentagonal structure: a first-principles study. Phys Chem Chem Phys 2022; 24:9990-9997. [PMID: 35388377 DOI: 10.1039/d1cp04328e] [Citation(s) in RCA: 12] [Impact Index Per Article: 4.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/14/2022]
Abstract
Low-symmetry penta-PdPSe (Pd4P4Se4) with intrinsic in-plane anisotropy was synthesized successfully [P. Li et al., Adv. Mater., 2021, 2102541]. Motivated by this experimental discovery, we investigate the structural, mechanical, electronic, optical and thermoelectric properties of PdPSe nanosheets via density functional theory calculations. The phonon dispersion, molecular dynamics simulation, and cohesive energy mechanical properties of the penta-PdPSe are verified to confirm its stability. The phonon spectrum represents a striking gap between the high-frequency and the low-frequency optical branches and an out-of-plane flexure mode with a quadratic dispersion in the long-wavelength limit. The Poisson's ratio indicates that penta-PdPSe is a brittle nanosheet. The penta-PdPSe is a semiconductor with an indirect bandgap of 1.40 (2.07) eV using the PBE functional (HSE06 hybrid functional). Optical properties simulation suggests that PdPSe is capable of absorbing a substantial range of visible to ultraviolet light. Band alignment analysis also reveals the compatibility of PdPSe for water splitting photocatalysis application. By combining the electrical and thermal transport properties of PdPSe, we show that a high power factor is achievable at room temperature, thus making PdPSe a candidate material for thermoelectric applications. Our findings reveal the strong potential of penta-PdPSe nanosheets for a wide array of applications, including optoelectronic, water splitting and thermoelectric device applications.
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Affiliation(s)
- A Bafekry
- Department of Physics, University of Guilan, Rasht 41335-1914, Iran. .,Department of Physics, Rasht Branch, Islamic Azad University, Rasht, Iran
| | - M M Fadlallah
- Department of Physics, Faculty of Science, Benha University, 13518 Benha, Egypt
| | - M Faraji
- Micro and Nanotechnology Graduate Program, TOBB University of Economics and Technology, Sogutozu Caddesi No 43 Sogutozu, 06560, Ankara, Turkey
| | - A Shafique
- Department of Physics, Lahore University of Management Sciences, Lahore, Pakistan
| | - H R Jappor
- Department of Physics, College of Education for Pure Sciences, University of Babylon, Hilla, Iraq
| | | | - Yee Sin Ang
- Science, Mathematics and Technology (SMT) Cluster, Singapore University of Technology and Design, 487372, Singapore
| | - M Ghergherehchi
- Department of Electrical and Computer Engineering, Sungkyunkwan University, 16419 Suwon, Korea
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9
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Mortazavi B, Neek-Amal M. Comment on 'Two-dimensional carbon nitride C 6N nanosheet with egg-comb-like structure and electronic properties of a semimetal [2021, Nanotechnology32, 215702]'. NANOTECHNOLOGY 2022; 33:278001. [PMID: 35354126 DOI: 10.1088/1361-6528/ac62b0] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/15/2021] [Accepted: 03/30/2022] [Indexed: 06/14/2023]
Abstract
Recently, Bafekryet al(2021Nanotechnology32215702) predicted a novel two-dimensional carbon nitride with an egg-comb-like structure and a C6N stoichiometry. Their density functional theory results reveal the thermal stability of this structure at 300 K. They also examined the thermoelectric properties of this monolayer up to 500 K. By adopting the same methodology employed in the original work by Bafekryet al(2021Nanotechnology32215702), we show that this monolayer is thermally unstable and cannot be employed for practical applications. Aforementioned theoretical work also includes inaccuracies in the evaluation of thermoelectric properties of the C6N monolayer, as they did not consider the contribution of the lattice thermal conductivity.
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Affiliation(s)
- Bohayra Mortazavi
- Department of Mathematics and Physics, Leibniz Universität Hannover, D-30167 Hannover, Germany
| | - Mehdi Neek-Amal
- Department of Physics, Shahid Rajaee Teacher Training University, 16875-163 Lavizan, Tehran, Iran
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10
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Li F, Ai H, Shen S, Geng J, Ho Lo K, Pan H. Two-Dimensional Dirac Nodal Line Carbon Nitride to Anchor Single-Atom Catalyst for Oxygen Reduction Reaction. CHEMSUSCHEM 2022; 15:e202102537. [PMID: 35132828 DOI: 10.1002/cssc.202102537] [Citation(s) in RCA: 5] [Impact Index Per Article: 1.7] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/01/2021] [Revised: 01/07/2022] [Indexed: 06/14/2023]
Abstract
Two-dimensional carbon nitride (2DCN) materials have emerged as an important class of 2D materials beyond graphene. However, 2DCN materials with nodal-line semimetal characteristic are rarely reported. In this work, a new nodal-line semimetal 2DCN with the stoichiometry C4 N4 is designed by using density functional theory (DFT) calculations and its application to anchor single-atom catalysts (SACs) for the oxygen reduction reaction (ORR) is investigated. C4 N4 is a planar covalent network (sp2 hybridization) with regular holes formed by the four N atoms, which is dynamically, thermodynamically, and mechanically stable. The nodal line is contributed by the pz orbitals of C and px/y orbitals of N atoms. C4 N4 shows an anisotropic Fermi velocity and high electron mobility. Because of its porous structure, C4 N4 can anchor heteroatoms as SACs for electrocatalysis. C4 N4 anchored with Fe or Co is shown to be highly active for the ORR with a rather high half-wave potential of around 0.90 V, which is higher than those of SACs on other carbon nitrides. These findings may provide a new strategy to design novel substrates for SACs.
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Affiliation(s)
- Feifei Li
- Institute of Applied Physics and Materials Engineering, University of Macau, Macao SAR, P. R. China
| | - Haoqiang Ai
- Department of Electromechanical Engineering Faculty of Science and Technology, University of Macau, Macao SAR, P. R. China
| | - Shiying Shen
- Institute of Applied Physics and Materials Engineering, University of Macau, Macao SAR, P. R. China
| | - Jiazhong Geng
- Institute of Applied Physics and Materials Engineering, University of Macau, Macao SAR, P. R. China
| | - Kin Ho Lo
- Department of Electromechanical Engineering Faculty of Science and Technology, University of Macau, Macao SAR, P. R. China
| | - Hui Pan
- Institute of Applied Physics and Materials Engineering, University of Macau, Macao SAR, P. R. China
- Department of Physics and Chemistry, Faculty of Science and Technology, University of Macau, Macao SAR, P. R. China
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11
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Tuning the electronic and optical properties of two-dimensional hydrogenated c-BN nanosheets by Be and C dopants and vacancy defects. Chem Phys 2022. [DOI: 10.1016/j.chemphys.2021.111441] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/18/2022]
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12
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Bafekry A, Faraji M, Hieu NN, Ang YS, Karbasizadeh S, Abdolhosseini Sarsari I, Ghergherehchi M. Two-dimensional Dirac half-metal in porous carbon nitride C 6N 7monolayer via atomic doping. NANOTECHNOLOGY 2021; 33:075707. [PMID: 34673552 DOI: 10.1088/1361-6528/ac31e7] [Citation(s) in RCA: 10] [Impact Index Per Article: 2.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/12/2021] [Accepted: 10/21/2021] [Indexed: 06/13/2023]
Abstract
Motivated by the recent experimental discovery of C6N7monolayer (Zhaoet al2021Science Bulletin66, 1764), we show that C6N7monolayer co-doped with C atom is a Dirac half-metal by employing first-principle density functional theory calculations. The structural, mechanical, electronic and magnetic properties of the co-doped C6N7are investigated by both the PBE and HSE06 functionals. Pristine C6N7monolayer is a semiconductor with almost isotropic electronic dispersion around the Γ point. As the doping of the C6N7takes place, the substitution of an N atom with a C atom transforms the monolayer into a dilute magnetic semiconductor, with the spin-up channel showing a band gap of 2.3 eV, while the spin-down channel exhibits a semimetallic phase with multiple Dirac points. The thermodynamic stability of the system is also checked out via AIMD simulations, showing the monolayer to be free of distortion at 500 K. The emergence of Dirac half-metal in carbon nitride monolayer via atomic doping reveals an exciting material platform for designing novel nanoelectronics and spintronics devices.
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Affiliation(s)
- A Bafekry
- Department of Radiation Application, Shahid Beheshti University, Tehran, Iran
| | - M Faraji
- Micro and Nanotechnology Graduate Program, TOBB University of Economics and Technology, Sogutozu Caddesi No 43 Sogutozu, 06560 Ankara, Turkey
| | - N N Hieu
- Institute of Research and Development, Duy Tan University, Da Nang 550000, Vietnam
- Faculty of Natural Sciences, Duy Tan University, Da Nang 550000, Vietnam
| | - Yee Sin Ang
- Science, Mathematics and Technology (SMT) Cluster, Singapore University of Technology and Design, 487372, Singapore
| | - S Karbasizadeh
- Department of Physics, Isfahan University of Technology, Isfahan 84156-83111, Iran
| | | | - M Ghergherehchi
- Department of Electrical and Computer Engineering, Sungkyunkwan University, 16419 Suwon, Republic of Korea
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13
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Bafekry A, Faraji M, Fadlallah MM, Hoat DM, Jappor HR, Sarsari IA, Ghergherehchi M, Feghhi SAH. Electronic, optical and thermoelectric properties of a novel two-dimensional SbXY (X = Se, Te; Y = Br, I) family: ab initio perspective. Phys Chem Chem Phys 2021; 23:25866-25876. [PMID: 34766178 DOI: 10.1039/d1cp03706d] [Citation(s) in RCA: 8] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022]
Abstract
Recent developments in the synthesis of highly crystalline ultrathin BiTeX (X = Br, Cl) structures [Debarati Hajra et al., ACS Nano 14, 15626 (2020)] have led to the exploration of the atomic structure, dynamical stability, and electronic, optical, and thermoelectric properties of SbXY (X = Se, Te; Y = Br, I) monolayers via density functional calculations. The calculated phonon spectrum, elastic stability conditions, and cohesive energy verified the stability of the studied SbXY monolayers. The mechanical properties reveal that all studied monolayers are stable and brittle. Based on PBE (PBE + SOC) functional calculations, the SbXY monolayers are semiconductors with indirect bandgaps. The calculated bandgaps using HSE (HSE + SOC) for SbSeBr, SbSeI, SbTeBr, and SbTeI monolayers are between 1.45 and 1.91 eV, which are appealing for applications in nanoelectronic devices. The signature of the Rashba effect appears in the SbXY monolayer. The SbXY monolayers are visible-light active. Hole doping can be an efficient way to increase the electricity production of SbXY monolayers from waste heat energy. This study suggests that SbXY (X = Se, Te; Y = Br, I) monolayers represent promising new electronic, optical, and energy conversion systems.
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Affiliation(s)
- A Bafekry
- Department of Radiation Application, Shahid Beheshti University, 19839 69411 Tehran, Iran.
| | - M Faraji
- TOBB University of Economics and Technology, Sogutozu Caddesi No. 43 Sogutozu, 06560, Ankara, Turkey
| | - M M Fadlallah
- Department of Physics, Faculty of Science, Benha University, 13518 Benha, Egypt
| | - D M Hoat
- Institute of Theoretical and Applied Research, Duy Tan University, Hanoi 100000, Vietnam.,Faculty of Natural Sciences, Duy Tan University, Da Nang 550000, Vietnam
| | - H R Jappor
- Department of Physics, College of Education for Pure Sciences, University of Babylon, Hilla, Iraq
| | | | - M Ghergherehchi
- Department of Electrical and Computer Engineering, Sungkyunkwan University, 6419 Suwon, Korea.
| | - S A H Feghhi
- Department of Radiation Application, Shahid Beheshti University, 19839 69411 Tehran, Iran.
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Bafekry A, Faraji M, Karbasizadeh S, Jappor HR, Sarsari IA, Ghergherehchi M, Gogova D. Investigation of vacancy defects and substitutional doping in AlSb monolayer with double layer honeycomb structure: a first-principles calculation. JOURNAL OF PHYSICS. CONDENSED MATTER : AN INSTITUTE OF PHYSICS JOURNAL 2021; 34:065701. [PMID: 34731833 DOI: 10.1088/1361-648x/ac360a] [Citation(s) in RCA: 13] [Impact Index Per Article: 3.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/12/2021] [Accepted: 11/03/2021] [Indexed: 06/13/2023]
Abstract
The experimental knowledge of the AlSb monolayer with double layer honeycomb structure is largely based on the recent publication (Le Qinet al2021ACS Nano158184), where this monolayer was recently synthesized. Therefore, the aim of our research is to consequently explore the effects of substitutional doping and vacancy point defects on the electronic and magnetic properties of the novel hexagonal AlSb monolayer. Besides experimental reports, the phonon band structure and cohesive energy calculations confirm the stability of the AlSb monolayer. Its direct bandgap has been estimated to be 0.9 eV via the hybrid functional method, which is smaller than the value of 1.6 eV of bulk material. The majority of vacancy defects and substitutional dopants change the electronic properties of the AlSb monolayer from semiconducting to metallic. Moreover, the MgSbimpurity has demonstrated the addition of ferromagnetic behavior to the material. It is revealed through the calculation of formation energy that in Al-rich conditions, the vacant site of VSbis the most stable, while in Sb-rich circumstances the point defect of VAlgets the title. The formation energy has also been calculated for the substitutional dopants, showing relative stability of the defected structures. We undertook this theoretical study to inspire many experimentalists to focus their efforts on AlSb monolayer growth incorporating different impurities. It has been shown here that defect engineering is a powerful tool to tune the properties of novel AlSb two-dimensional monolayer for advanced nanoelectronic applications.
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Affiliation(s)
- A Bafekry
- Department of Radiation Application, Shahid Beheshti University, Tehran, Iran
| | - M Faraji
- Micro and Nanotechnology Graduate Program, TOBB University of Economics and Technology, Sogutozu Caddesi No. 43 Sogutozu, 06560, Ankara, Turkey
| | - S Karbasizadeh
- Department of Physics, Isfahan University of Technology, Isfahan, 84156-83111, Iran
| | - H R Jappor
- Department of Physics, College of Education for Pure Sciences, University of Babylon, Hilla, Iraq
| | | | - M Ghergherehchi
- Department of Electrical and Computer Engineering, Sungkyunkwan University, 16419 Suwon, Republic of Korea
| | - D Gogova
- Department of Physics, Chemistry and Biology, Linkoping University, 58183 Linköping, Sweden
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15
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Bafekry A, Faraji M, Karbasizadeh S, Sarsari IA, Jappor HR, Ghergherehchi M, Gogova D. Two-dimensional FeTe 2 and predicted Janus FeXS (X: Te and Se) monolayers with intrinsic half-metallic character: tunable electronic and magnetic properties via strain and electric field. Phys Chem Chem Phys 2021; 23:24336-24343. [PMID: 34676853 DOI: 10.1039/d1cp03078g] [Citation(s) in RCA: 10] [Impact Index Per Article: 2.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/21/2022]
Abstract
Driven by the fabrication of bulk and monolayer FeTe2 (ACS Nano, 2020, 14, 11473-11481), we explore the lattice, dynamic stability, electronic and magnetic properties of FeTeS and FeSeS Janus monolayers using density functional theory calculations. The obtained results validate the dynamic and thermal stability of the FeTeS and FeSeS Janus monolayers examined. The electronic structure shows that the FeTe2 bulk yields a total magnetization higher than the FeTe2 monolayer. FeTeS and FeSeS are categorized as ferromagnetic metals due to their bands crossing the Fermi level. So, they can be a good candidate material for spin filter applications. The biaxial compressive strain on the FeTe2 monolayer tunes the bandgap of the spin-down channel in the half-metal phase. By contrast, for FeTeS, the biaxial strain transforms the ferromagnetic metal into a half-metal. The electric field applied to the FeSeS monolayer in a parallel direction transforms the half-metal to a ferromagnetic metal by closing the gap in the spin-down channel.
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Affiliation(s)
- A Bafekry
- Department of Radiation Application, Shahid Beheshti University, 19839 69411 Tehran, Iran.
| | - M Faraji
- TOBB University of Economics and Technology, Sogutozu Caddesi No 43 Sogutozu, 06560, Ankara, Turkey
| | - S Karbasizadeh
- Department of Physics, Isfahan University of Technology, Isfahan, 84156-83111, Iran
| | | | - H R Jappor
- Department of Physics, College of Education for Pure Sciences, University of Babylon, Hilla, Iraq
| | - M Ghergherehchi
- Department of Electrical and Computer Engineering, Sungkyunkwan University, 16419 Suwon, Korea.
| | - D Gogova
- Department of Physics, Chemistry and Biology, Linkoping University, 58183 Linköping, Sweden
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Bafekry A, Faraji M, Fadlallah MM, Jappor HR, Karbasizadeh S, Ghergherehchi M, Gogova D. Biphenylene monolayer as a two-dimensional nonbenzenoid carbon allotrope: a first-principles study. JOURNAL OF PHYSICS. CONDENSED MATTER : AN INSTITUTE OF PHYSICS JOURNAL 2021; 34:015001. [PMID: 34571501 DOI: 10.1088/1361-648x/ac2a7b] [Citation(s) in RCA: 15] [Impact Index Per Article: 3.8] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/18/2021] [Accepted: 09/27/2021] [Indexed: 06/13/2023]
Abstract
In a very recent accomplishment, the two-dimensional form of biphenylene network (BPN) has been fabricated. Motivated by this exciting experimental result on 2D layered BPN structure, herein we perform detailed density-functional theory-based first-principles calculations, in order to gain insight into the structural, mechanical, electronic and optical properties of this promising nanomaterial. Our theoretical results reveal the BPN structure is constructed from three rings of tetragon, hexagon and octagon, meanwhile the electron localization function shows very strong bonds between the C atoms in the structure. The dynamical stability of BPN is verified via the phonon band dispersion calculations. The mechanical properties reveal the brittle behavior of BPN monolayer. The Young's modulus has been computed as 0.1 TPa, which is smaller than the corresponding value of graphene, while the Poisson's ratio determined to be 0.26 is larger than that of graphene. The band structure is evaluated to show the electronic features of the material; determining the BPN monolayer as metallic with a band gap of zero. The optical properties (real and imaginary parts of the dielectric function, and the absorption spectrum) uncover BPN as an insulator along thezzdirection, while owning metallic properties inxxandyydirections. We anticipate that our discoveries will pave the way to the successful implementation of this 2D allotrope of carbon in advanced nanoelectronics.
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Affiliation(s)
- A Bafekry
- Department of Radiation Application, Shahid Beheshti University, 19839 69411 Tehran, Iran
| | - M Faraji
- Micro and Nanotechnology Graduate Program, TOBB University of Economics and Technology, Sogutozu Caddesi No 43 Sogutozu, 06560, Ankara, Turkey
| | - M M Fadlallah
- Department of Physics, Faculty of Science, Benha University, 13518 Benha, Egypt
| | - H R Jappor
- Department of Physics, College of Education for Pure Sciences, University of Babylon, Hilla, Iraq
| | - S Karbasizadeh
- Department of Physics, Isfahan University of Technology, Isfahan, 84156-83111, Iran
| | - M Ghergherehchi
- Department of Electrical and Computer Engineering, Sungkyunkwan University, 16419 Suwon, Republic of Korea
| | - D Gogova
- Department of Physics, Chemistry and Biology, Linkoping University, Sweden
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Hao J, Wang Z, Wang Y. Computational investigation of lithium intercalation in single-walled zigzag blue phosphorene nanotubes. Chem Phys 2021. [DOI: 10.1016/j.chemphys.2021.111297] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/14/2022]
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Pastukh S, Laskowska M, Dulski M, Krzykawski T, Parlinski K, Piekarz P. Ab initiostudies for characterization and identification of nanocrystalline copper pyrophosphate confined in mesoporous silica. NANOTECHNOLOGY 2021; 32:415701. [PMID: 34214993 DOI: 10.1088/1361-6528/ac10e5] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/12/2021] [Accepted: 07/02/2021] [Indexed: 06/13/2023]
Abstract
Here we employ a novel method for preparing the homogeneous copper pyrophosphate nanocrystals inside silica mesopores. In order to characterize and identify synthesized nanocrystals we performed theab initiostudies of theαphase of Cu2P2O7. The electronic and crystal structure were optimized within the density functional theory with the strong electron interactions in the3dstates on copper atoms and van der Waals corrections included in calculations. The relaxed lattice parameters and atomic positions agree very well with the results of the diffraction measurements for nanocrystalline copper pyrophosphates embedded inside SBA-15 silica pores. The obtained Mott insulating state with the energy gap of 3.17 eV exhibits the antiferromagnetic order with magnetic moments on copper atoms (0.8μB) that is compatible with the experimental studies. The phonon dispersion relations were obtained to study the dynamical properties of the Cu2P2O7lattice and the element-specific atomic vibrations were analyzed using the partial phonon density of states. The calculated Raman spectrum revealed the consistency of typical bands of Cu2P2O7with the experimental data. The investigation that combines a new synthesis of nanomaterials with the first-principles calculations is important for better characterization and understanding of the physical properties relevant for nanotechnological applications.
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Affiliation(s)
- Svitlana Pastukh
- Institute of Nuclear Physics, Polish Academy of Sciences, Kraków, Poland
| | | | - Mateusz Dulski
- Institute of Materials Engineering, University of Silesia, and Silesian Center for Education and Interdisciplinary Research, Chorzów, Poland
| | - Tomasz Krzykawski
- Faculty of Natural Sciences, Institute of Earth Sciences, University of Silesia, Sosnowiec, Poland
| | | | - Przemysław Piekarz
- Institute of Nuclear Physics, Polish Academy of Sciences, Kraków, Poland
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Naseri M, Bafekry A, Faraji M, Hoat DM, Fadlallah MM, Ghergherehchi M, Sabbaghi N, Gogova D. Two-dimensional buckled tetragonal cadmium chalcogenides including CdS, CdSe, and CdTe monolayers as photo-catalysts for water splitting. Phys Chem Chem Phys 2021; 23:12226-12232. [PMID: 34009225 DOI: 10.1039/d1cp00317h] [Citation(s) in RCA: 15] [Impact Index Per Article: 3.8] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022]
Abstract
Pure hydrogen production via water splitting is an ideal strategy for producing clean and sustainable energy. Two-dimensional (2D) cadmium chalcogenide single-layers with a tetragonal crystal structure, namely Tetra-CdX (X = S, Se, and Te) monolayers, are theoretically predicted by means of density functional theory (DFT). Their structural stability and electronic and optical properties are investigated. We find that Tetra-CdX single-layers are thermodynamically stable. Their stability decreases as we go down the 6A group in the periodic table, i.e., from X = S to Se, and Te which also means that the electronegativity decreases. All considered novel monolayers are indirect band gap semiconductors. Using the HSE06 functional the electronic band gaps of CdS, CdSe, and CdTe monolayers are predicted to be 3.10 eV, 2.97 eV, and 2.90 eV, respectively. The impact of mechanical strain on the physical properties was studied, which indicates that compressive strain increases the band gap and tensile strain decreases the band gap. The optical properties of the Tetra-CdX monolayers show the ability of these monolayers to absorb visible light. Due to the suitable band gaps and band edge positions of Tetra-CdX, these newly discovered 2D materials are promising for photocatalytic water splitting.
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Affiliation(s)
- M Naseri
- Department of Physics, Kermanshah Branch, Islamic Azad University, 6718997551, Kermanshah, Iran
| | - A Bafekry
- Department of Radiation Application, Shahid Beheshti University, Tehran, Iran. and Department of Physics, University of Antwerp, Groenenborgerlaan 171, B-2020 Antwerp, Belgium
| | - M Faraji
- TOBB University of Economics and Technology, Sogutozu Caddesi No 43 Sogutozu, 06560, Ankara, Turkey
| | - D M Hoat
- Institute of Theoretical and Applied Research, Duy Tan University, Ha Noi 100000, Vietnam and Faculty of Natural Sciences, Duy Tan University, Da Nang 550000, Vietnam
| | - Mohamed M Fadlallah
- Department of Physics, Faculty of Science, Benha University, 13518 Benha, Egypt
| | - M Ghergherehchi
- Department of Electrical and Computer Engineering, Sungkyunkwan University, 16419 Suwon, Korea.
| | - N Sabbaghi
- Analytical Research Laboratory, Department of Chemistry, University of Sistan and Baluchestan, P.O. Box 98135-674, Zahedan, Iran
| | - D Gogova
- Department of Physics, University of Oslo, P.O. Box 1048, Blindern, Oslo, Norway
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