Shape memory effect nanotools for nano-creation: examples of nanowire-based devices with charge density waves

First-principles study of the structure, electronic and optical properties of monolayer ZrX3 (X = S, Se, Te)

CONTEXT AND RESULTS

The structure, electronic and optical properties of single-layer transition metallic chalcogenides ZrX3 (X = S, Se, Te) have been studied by density functional theory. The electron energy dispersion curve shows that ZrX3 has semiconductor properties, in which the conduction band is mainly contributed by the correlated states of the Zr-d orbital, and the valence band is mainly contributed by the correlated states of the X-p orbital. It is found that b-axis and biaxial strain have great influence on the bandgap and the shift of density of states is also large. At the same time, the peak value of density of states increases greatly when biaxial strain is applied. It is of guiding significance for selecting suitable substrates to prepare two-dimensional ZrX3 materials to study their electronic properties. The calculation of optical constants confirms that ZrX3 has strong optical anisotropy. In the visible range, the light absorption efficiency of ZrX3 in the direction of electric field polarization [100] is higher than that in the direction of [010]. The reflectance spectral results show that ZrS3 and ZrSe3 in the [100] directions have the highest reflectance, and ZrTe3 in the [010] direction has the highest reflectance, even in the long electromagnetic radiation range (up to 10 eV), which is of great significance for the construction of visible optical devices.

COMPUTATIONAL METHOD

All computations have been carried out based on density functional theory (DFT) as implemented in the CASTEP code. The pseudo-potential is adopted by the norm conserving, and the exchange correlation functional is adopted by the Perdew-Burke-Ernzerhof in local generalized gradient approximation (GGA).

Quasi-One-Dimensional van der Waals Transition Metal Trichalcogenides

The transition metal trichalcogenides (TMTCs) are quasi-one-dimensional (1D) MX3-type van der Waals layered semiconductors, where M is a transition metal element of groups IV and V, and X indicates chalcogen element. Due to the unique quasi-1D crystalline structures, they possess several novel electrical properties such as variable bandgaps, charge density waves, and superconductivity, and highly anisotropic optical, thermoelectric, and magnetic properties. The study of TMTCs plays an essential role in the 1D quantum materials field, enabling new opportunities in the material research dimension. Currently, tremendous progress in both materials and solid-state devices has been made, demonstrating promising applications in the realization of nanoelectronic devices. This review provides a comprehensive overview to survey the state of the art in materials, devices, and applications based on TMTCs. Firstly, the symbolic structure, current primary synthesis methods, and physical properties of TMTCs have been discussed. Secondly, examples of TMTC applications in various fields are presented, such as photodetectors, energy storage devices, catalysts, and sensors. Finally, we give an overview of the opportunities and future perspectives for the research of TMTCs, as well as the challenges in both basic research and practical applications.

Phase Transformation in TiNi Nano-Wafers for Nanomechanical Devices with Shape Memory Effect

Recently, Ti-Ni based intermetallic alloys with shape memory effect (SME) have attracted much attention as promising functional materials for the development of record small nanomechanical tools, such as nanotweezers, for 3D manipulation of the real nano-objects. The problem of the fundamental restrictions on the minimal size of the nanomechanical device with SME for manipulation is connected with size effects which are observed in small samples of Ti-Ni based intermetallic alloys with thermoplastic structural phase transition from austenitic high symmetrical phase to low symmetrical martensitic phase. In the present work, by combining density functional theory and molecular dynamics modelling, austenite has been shown to be more stable than martensite in nanometer-sized TiNi wafers. In this case, the temperature of the martensitic transition asymptotically decreases with a decrease in the plate thickness h, and the complete suppression of the phase transition occurs for a plate with a thickness of 2 nm, which is in qualitative agreement with the experimental data. Moreover, the theoretical values obtained indicate the potential for even greater minimization of nanomechanical devices based on SME in TiNi.