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Chen M, Li L, Xu M, Li W, Zheng L, Wang X. Quasi-One-Dimensional van der Waals Transition Metal Trichalcogenides. RESEARCH (WASHINGTON, D.C.) 2023; 6:0066. [PMID: 36930809 PMCID: PMC10013805 DOI: 10.34133/research.0066] [Citation(s) in RCA: 1] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/03/2022] [Accepted: 01/12/2023] [Indexed: 01/21/2023]
Abstract
The transition metal trichalcogenides (TMTCs) are quasi-one-dimensional (1D) MX3-type van der Waals layered semiconductors, where M is a transition metal element of groups IV and V, and X indicates chalcogen element. Due to the unique quasi-1D crystalline structures, they possess several novel electrical properties such as variable bandgaps, charge density waves, and superconductivity, and highly anisotropic optical, thermoelectric, and magnetic properties. The study of TMTCs plays an essential role in the 1D quantum materials field, enabling new opportunities in the material research dimension. Currently, tremendous progress in both materials and solid-state devices has been made, demonstrating promising applications in the realization of nanoelectronic devices. This review provides a comprehensive overview to survey the state of the art in materials, devices, and applications based on TMTCs. Firstly, the symbolic structure, current primary synthesis methods, and physical properties of TMTCs have been discussed. Secondly, examples of TMTC applications in various fields are presented, such as photodetectors, energy storage devices, catalysts, and sensors. Finally, we give an overview of the opportunities and future perspectives for the research of TMTCs, as well as the challenges in both basic research and practical applications.
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Affiliation(s)
- Mengdi Chen
- Frontiers Science Center for Flexible Electronics (FSCFE) & Shaanxi Institute of Flexible Electronics (SIFE), Northwestern Polytechnical University (NPU), 127 West Youyi Road, Xi'an 710072, China.,Shaanxi Key Laboratory of Flexible Electronics (KLoFE), Northwestern Polytechnical University (NPU), 127 West Youyi Road, Xi'an 710072, China.,MIIT Key Laboratory of Flexible Electronics (KLoFE), Northwestern Polytechnical University (NPU), 127 West Youyi Road, Xi'an710072, China
| | - Lei Li
- Frontiers Science Center for Flexible Electronics (FSCFE) & Shaanxi Institute of Flexible Electronics (SIFE), Northwestern Polytechnical University (NPU), 127 West Youyi Road, Xi'an 710072, China.,Shaanxi Key Laboratory of Flexible Electronics (KLoFE), Northwestern Polytechnical University (NPU), 127 West Youyi Road, Xi'an 710072, China.,MIIT Key Laboratory of Flexible Electronics (KLoFE), Northwestern Polytechnical University (NPU), 127 West Youyi Road, Xi'an710072, China
| | - Manzhang Xu
- Frontiers Science Center for Flexible Electronics (FSCFE) & Shaanxi Institute of Flexible Electronics (SIFE), Northwestern Polytechnical University (NPU), 127 West Youyi Road, Xi'an 710072, China.,Shaanxi Key Laboratory of Flexible Electronics (KLoFE), Northwestern Polytechnical University (NPU), 127 West Youyi Road, Xi'an 710072, China.,MIIT Key Laboratory of Flexible Electronics (KLoFE), Northwestern Polytechnical University (NPU), 127 West Youyi Road, Xi'an710072, China
| | - Weiwei Li
- Frontiers Science Center for Flexible Electronics (FSCFE) & Shaanxi Institute of Flexible Electronics (SIFE), Northwestern Polytechnical University (NPU), 127 West Youyi Road, Xi'an 710072, China.,Shaanxi Key Laboratory of Flexible Electronics (KLoFE), Northwestern Polytechnical University (NPU), 127 West Youyi Road, Xi'an 710072, China.,MIIT Key Laboratory of Flexible Electronics (KLoFE), Northwestern Polytechnical University (NPU), 127 West Youyi Road, Xi'an710072, China
| | - Lu Zheng
- Frontiers Science Center for Flexible Electronics (FSCFE) & Shaanxi Institute of Flexible Electronics (SIFE), Northwestern Polytechnical University (NPU), 127 West Youyi Road, Xi'an 710072, China.,Shaanxi Key Laboratory of Flexible Electronics (KLoFE), Northwestern Polytechnical University (NPU), 127 West Youyi Road, Xi'an 710072, China.,MIIT Key Laboratory of Flexible Electronics (KLoFE), Northwestern Polytechnical University (NPU), 127 West Youyi Road, Xi'an710072, China
| | - Xuewen Wang
- Frontiers Science Center for Flexible Electronics (FSCFE) & Shaanxi Institute of Flexible Electronics (SIFE), Northwestern Polytechnical University (NPU), 127 West Youyi Road, Xi'an 710072, China.,Shaanxi Key Laboratory of Flexible Electronics (KLoFE), Northwestern Polytechnical University (NPU), 127 West Youyi Road, Xi'an 710072, China.,MIIT Key Laboratory of Flexible Electronics (KLoFE), Northwestern Polytechnical University (NPU), 127 West Youyi Road, Xi'an710072, China.,Key Laboratory of Flexible Electronics of Zhejiang Provience, Ningbo Institute of Northwestern Polytechnical University, 218 Qingyi Road, Ningbo 315103, China
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Kartsev A, Lega PV, Orlov AP, Pavlov AI, von Gratowski S, Koledov VV, Ilin AS. Phase Transformation in TiNi Nano-Wafers for Nanomechanical Devices with Shape Memory Effect. NANOMATERIALS 2022; 12:nano12071107. [PMID: 35407225 PMCID: PMC9000565 DOI: 10.3390/nano12071107] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 01/10/2022] [Revised: 03/19/2022] [Accepted: 03/20/2022] [Indexed: 11/23/2022]
Abstract
Recently, Ti-Ni based intermetallic alloys with shape memory effect (SME) have attracted much attention as promising functional materials for the development of record small nanomechanical tools, such as nanotweezers, for 3D manipulation of the real nano-objects. The problem of the fundamental restrictions on the minimal size of the nanomechanical device with SME for manipulation is connected with size effects which are observed in small samples of Ti-Ni based intermetallic alloys with thermoplastic structural phase transition from austenitic high symmetrical phase to low symmetrical martensitic phase. In the present work, by combining density functional theory and molecular dynamics modelling, austenite has been shown to be more stable than martensite in nanometer-sized TiNi wafers. In this case, the temperature of the martensitic transition asymptotically decreases with a decrease in the plate thickness h, and the complete suppression of the phase transition occurs for a plate with a thickness of 2 nm, which is in qualitative agreement with the experimental data. Moreover, the theoretical values obtained indicate the potential for even greater minimization of nanomechanical devices based on SME in TiNi.
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Affiliation(s)
- Alexey Kartsev
- Computing Center FEB RAS, 680063 Khabarovsk, Russia;
- Bauman Moscow State Technical University, 105005 Moscow, Russia;
- MIREA−Russian Technological University, 119454 Moscow, Russia
| | - Peter V. Lega
- Kotelnikov Institute of Radio Engineering and Electronics of the Russian Academy of Sciences, 125009 Moscow, Russia; (A.P.O.); (V.V.K.); (A.S.I.)
- Correspondence: (P.V.L.); (S.v.G.)
| | - Andrey P. Orlov
- Kotelnikov Institute of Radio Engineering and Electronics of the Russian Academy of Sciences, 125009 Moscow, Russia; (A.P.O.); (V.V.K.); (A.S.I.)
| | | | - Svetlana von Gratowski
- Kotelnikov Institute of Radio Engineering and Electronics of the Russian Academy of Sciences, 125009 Moscow, Russia; (A.P.O.); (V.V.K.); (A.S.I.)
- Correspondence: (P.V.L.); (S.v.G.)
| | - Victor V. Koledov
- Kotelnikov Institute of Radio Engineering and Electronics of the Russian Academy of Sciences, 125009 Moscow, Russia; (A.P.O.); (V.V.K.); (A.S.I.)
| | - Alexei S. Ilin
- Kotelnikov Institute of Radio Engineering and Electronics of the Russian Academy of Sciences, 125009 Moscow, Russia; (A.P.O.); (V.V.K.); (A.S.I.)
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