Effect of oxygen partial pressure on the performance of homojunction amorphous In-Ga-Zn-O thin-film transistors

Solution-processed bilayer InGaZnO/In2O3thin film transistors at low temperature by lightwave annealing

At low temperatures about 230 °C, bilayer InGaZnO/In2O3thin film transistors (TFTs) were prepared by a solution process with lightwave annealing. The InGaZnO/In2O3bilayer TFTs with SiO2as dielectric layer show high electrical performances, such as a mobility of 7.63 cm2V-1s-1, a threshold voltage (Vth) of 3.8 V, and an on/off ratio higher than 107, which are superior to single-layer InGaZnO TFTs or In2O3TFTs. Moreover, bilayer InGaZnO/In2O3TFTs demonstrated a great bias stability enhancement due to the introduction of top InGaZnO film act as a passivation layer, which could prevent the interaction of ambient air with the bottom In2O3layer. By using high dielectric constant AlOxfilm, the InGaZnO/In2O3TFTs exhibit an improved mobility of 47.7 cm2V-1s-1. The excellent electrical performance of the solution-based InGaZnO/In2O3TFTs shows great application potential for low-cost flexible printed electronics.

High-mobility and low subthreshold swing amorphous InGaZnO thin-film transistors byin situH2plasma and neutral oxygen beam irradiation treatment

In this work, staggered bottom-gate structure amorphous In-Ga-Zn-O (a-IGZO) thin film transistors (TFTs) with high-k ZrO₂gate dielectric were fabricated using low-cost atmospheric pressure-plasma enhanced chemical vapor deposition (AP-PECVD) within situhydrogenation to modulate the carrier concentration and improve interface quality. Subsequently, a neutral oxygen beam irradiation (NOBI) technique is applied, demonstrating that a suitable NOBI treatment could successfully enhance electrical characteristics by reducing native defect states and minimize the trap density in the back channel. A reverse retrograde channel (RRGC) with ultra-high/low carrier concentration is also formed to prevent undesired off-state leakage current and achieve a very low subthreshold swing. The resulting a-IGZO TFTs exhibit excellent electrical characteristics, including a low subthreshold swing of 72 mV dec^-1and high field-effect mobility of 35 cm²V^-1s^-1, due to conduction path passivation and stronger carrier confinement in the RRGC. The UV-vis spectroscopy shows optical transmittance above 90% in the visible range of the electromagnetic spectrum. The study confirms the H₂plasma with NOBI-treated a-IGZO/ZrO₂TFT is a promising candidate for transparent electronic device applications.