MOCVD growth mechanisms of ZnO nanorods

Electric field engineering and modulation of CuBr: a potential material for optoelectronic device applications

I-VII semiconductors, well-known for their strong luminescence in the visible region of the spectrum, have become promising for solid-state optoelectronics because inefficient light emission may be engineered/tailored by manipulating electronic bandgaps. Herein, we conclusively reveal electric-field-induced controlled engineering/modulation of structural, electronic and optical properties of CuBr via plane-wave basis set and pseudopotentials (pp) using generalized gradient approximation (GGA). We observed that the electric field (E) on CuBr causes enhancement (0.58 at 0.0 V Å^-1, 1.58 at 0.05 V Å^-1, 1.27 at -0.05 V Å^-1, to 1.63 at 0.1 V Å^-1 and -0.1 V Å^-1, 280% increase) and triggers modulation (0.78 at 0.5 V Å^-1) in the electronic bandgap, leading to a shift in behavior from semiconduction to conduction. Partial density of states (PDOS), charge density and electron localization function (ELF) reveal that electric field (E) causes a major shift and leads to Cu-1d, Br-2p, Cu-2s, Cu-3p, and Br-1s orbital contributions in valence and Cu-3p, Cu-2s and Br-2p, Cu-1d and Br-1s conduction bands. We observe the control/shift in chemical reactivity and electronic stability by tuning/tailoring the energy gap between the HOMO and LUMO states, such as an increase in the electric field from 0.0 V Å^-1 → 0.05 V Å^-1 → 0.1 V Å^-1 causes an increase in energy gap (0.78 eV, 0.93 and 0.96 eV), leading to electronic stability and less chemical reactivity and vice versa for further increase in the electric field. Optical reflectivity, refractive index, extinction coefficient, and real and imaginary parts of dielectric and dielectric constants under the applied electric field confirm the controlled optoelectronic modulation. This study offers valuable insights into the fascinating photophysical properties of CuBr via an applied electric field and provides prospects for broad-ranging applications.

Ligand assisted growth of perovskite single crystals with low defect density

A low defect density in metal halide perovskite single crystals is critical to achieve high performance optoelectronic devices. Here we show the reduction of defect density in perovskite single crystals grown by a ligand-assisted solution process with 3‐(decyldimethylammonio)‐propane‐sulfonate inner salt (DPSI) as an additive. DPSI ligands anchoring with lead ions on perovskite crystal surfaces not only suppress nucleation in solution, but also regulate the addition of proper ions to the growing surface, which greatly enhances the crystal quality. The grown CH₃NH₃PbI₃ crystals show better crystallinity and a 23-fold smaller trap density of 7 × 10¹⁰ cm⁻³ than the optimized control crystals. The enhanced material properties result in significantly suppressed ion migration and superior X-ray detection sensitivity of CH₃NH₃PbI₃ detectors of (2.6 ± 0.4) × 10⁶ µC Gy⁻¹air cm⁻² for 60 kVp X-ray and the lowest detectable dose rate reaches (5.0 ± 0.7) nGy s⁻¹, which enables reduced radiation dose to patients in medical X-ray diagnostics.

The performance of a metal halide perovskite single crystal is governed by the defect density. Here, the authors report a high quality single crystal perovskite grown by a ligand-assisted solution process with DPSI achieving 23-fold smaller trap density than that without DPSI.

Polarity-Dependent Growth Rates of Selective Area Grown ZnO Nanorods by Chemical Bath Deposition

Polarity is known to affect the growth and properties of ZnO single crystals and epitaxial films, but its effects are mostly unknown in ZnO nanorods. To leave polarity as the only varying parameter, ZnO nanorods are grown by chemical bath deposition under identical conditions and during the same run on O- and Zn-polar ZnO single crystals patterned by electron beam lithography with the same pattern consisting of 15 different domains. The resulting well-ordered O- and Zn-polar ZnO nanorod arrays with high structural uniformity are formed on all the domains. The comparison of their typical dimensions unambiguously reveals that Zn-polar ZnO nanorods have much higher growth rates than O-polar ZnO nanorods for all the hole diameter and period combinations. The distinct growth rates are explained in the framework of the surface reaction-/diffusive transport-limited elongation regime analysis, which yields a much larger surface reaction rate constant for Zn-polar ZnO nanorods. The origin of the difference is attributed to polarity-dependent dangling bond configurations at the top polar c-faces of ZnO nanorods, which may further be affected by polarity-dependent interactions with the ionic species in aqueous solution. These findings show the relevance of considering polarity as an important quantity in ZnO nanorods.

Quantitative and simultaneous analysis of the polarity of polycrystalline ZnO seed layers and related nanowires grown by wet chemical deposition

The polarity in ZnO nanowires is an important issue since it strongly affects surface configuration and reactivity, nucleation and growth, electro-optical properties, and nanoscale-engineering device performances. However, measuring statistically the polarity of ZnO nanowire arrays grown by chemical bath deposition and elucidating its correlation with the polarity of the underneath polycrystalline ZnO seed layer grown by the sol-gel process represents a major difficulty. To address that issue, we combine resonant x-ray diffraction (XRD) at Zn K-edge using synchrotron radiation with piezoelectric force microscopy and polarity-sensitive chemical etching to statistically investigate the polarity of more than 10⁷ nano-objects both on the macroscopic and local microscopic scales, respectively. By using high temperature annealing under an argon atmosphere, it is shown that the compact, highly c-axis oriented ZnO seed layer is more than 92% Zn-polar and that only a few small O-polar ZnO grains with an amount less than 8% are formed. Correlatively, the resulting ZnO nanowires are also found to be Zn-polar, indicating that their polarity is transferred from the c-axis oriented ZnO grains acting as nucleation sites in the seed layer. These findings pave the way for the development of new strategies to form unipolar ZnO nanowire arrays as a requirement for a number of nanoscale-engineering devices like piezoelectric nanogenerators. They also highlight the great advantage of resonant XRD as a macroscopic, non-destructive method to simultaneously and statistically measure the polarity of ZnO nanowire arrays and of the underneath ZnO seed layer.

Selective area growth of well-ordered ZnO nanowire arrays with controllable polarity

Controlling the polarity of ZnO nanowires in addition to the uniformity of their structural morphology in terms of position, vertical alignment, length, diameter, and period is still a technological and fundamental challenge for real-world device integration. In order to tackle this issue, we specifically combine the selective area growth on prepatterned polar c-plane ZnO single crystals using electron-beam lithography, with the chemical bath deposition. The formation of ZnO nanowires with a highly controlled structural morphology and a high optical quality is demonstrated over large surface areas on both polar c-plane ZnO single crystals. Importantly, the polarity of ZnO nanowires can be switched from O- to Zn-polar, depending on the polarity of prepatterned ZnO single crystals. This indicates that no fundamental limitations prevent ZnO nanowires from being O- or Zn-polar. In contrast to their catalyst-free growth by vapor-phase deposition techniques, the possibility to control the polarity of ZnO nanowires grown in solution is remarkable, further showing the strong interest in the chemical bath deposition and hydrothermal techniques. The single O- and Zn-polar ZnO nanowires additionally exhibit distinctive cathodoluminescence spectra. To a broader extent, these findings open the way to the ultimate fabrication of well-organized heterostructures made from ZnO nanowires, which can act as building blocks in a large number of electronic, optoelectronic, and photovoltaic devices.

Compared growth mechanisms of Zn-polar ZnO nanowires on O-polar ZnO and on sapphire

Controlling the growth of zinc oxide nanowires is necessary to optimize the performance of nanowire-based devices such as photovoltaic solar cells, nano-generators, or light-emitting diodes. With this in mind, we investigate the nucleation and growth mechanisms of ZnO nanowires grown by metalorganic vapor phase epitaxy either on O-polar ZnO or on sapphire substrates. Whatever the substrate, ZnO nanowires are Zn-polar, as demonstrated by convergent beam electron diffraction. For growth on O-polar ZnO substrate, the nanowires are found to sit on O-polar pyramids. As growth proceeds, the inversion domain boundary moves up in order to remain at the top of the O-polar pyramids. For growth on sapphire substrates, the nanowires may also originate from the sapphire/ZnO interface. The presence of atomic steps and the non-polar character of sapphire could be the cause of the Zn-polar crystal nucleation on sapphire, whereas it is proposed that the segregation of aluminum impurities could account for the nucleation of inverted domains for growth on O-polar ZnO.

Carrier depletion and exciton diffusion in a single ZnO nanowire

Carrier depletion and transport in a single ZnO nanowire Schottky device have been investigated at 5 K, using cathodoluminescence measurements. An exciton diffusion length of 200 nm has been determined along the nanowire axis. The depletion width is found to increase linearly with the reverse bias. The origin of this unusual dependence in semiconductor material is discussed in terms of charge location and dimensional effects on the screening of the junction electric field.