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Qiu K, Pomaska M, Li S, Lambertz A, Duan W, Gad A, Geitner M, Brugger J, Liang Z, Shen H, Finger F, Rau U, Ding K. Development of Conductive SiC x:H as a New Hydrogenation Technique for Tunnel Oxide Passivating Contacts. ACS APPLIED MATERIALS & INTERFACES 2020; 12:29986-29992. [PMID: 32501671 DOI: 10.1021/acsami.0c06637] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
Conductive hydrogenated silicon carbide (SiCx:H) is discovered as a promising hydrogenation material for tunnel oxide passivating contacts (TOPCon) solar cells. The proposed SiCx:H layer enables a good passivation quality and features a good electrical conductivity, which eliminates the need of etching back of SiNx:H and indium tin oxide (ITO)/Ag deposition for metallization and reduces the number of process steps. The SiCx:H is deposited by hot wire chemical vapor deposition (HWCVD) and the filament temperature (Tf) during deposition is systematically investigated. Via tuning the SiCx:H layer, implied open-circuit voltages (iVoc) up to 742 ± 0.5 mV and a contact resistivity (ρc) of 21.1 ± 5.4 mΩ·cm2 is achieved using SiCx:H on top of poly-Si(n)/SiOx/c-Si(n) stack at Tf of 2000 °C. Electrochemical capacitance-voltage (ECV) and secondary ion mass spectrometry (SIMS) measurements were conducted to investigate the passivation mechanism. Results show that the hydrogenation at the SiOx/c-Si(n) interface is responsible for the high passivation quality. To assess its validity, the TOPCon stack was incorporated as rear electron selective-contact in a proof-of-concept n-type solar cells featuring ITO/a-Si:H(p)/a-Si:H(i) as front hole selective-contact, which demonstrates a conversion efficiency up to 21.4%, a noticeable open-circuit voltage (Voc) of 724 mV and a fill factor (FF) of 80%.
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Affiliation(s)
- Kaifu Qiu
- IEK-5 Photovoltaik, Forschungszentrum Jülich, 52428, Jülich, Germany
- School of Physics, Sun Yat-Sen University, Guangzhou, 510275, PR China
| | - Manuel Pomaska
- IEK-5 Photovoltaik, Forschungszentrum Jülich, 52428, Jülich, Germany
| | - Shenghao Li
- IEK-5 Photovoltaik, Forschungszentrum Jülich, 52428, Jülich, Germany
- School of Physics, Sun Yat-Sen University, Guangzhou, 510275, PR China
| | - Andreas Lambertz
- IEK-5 Photovoltaik, Forschungszentrum Jülich, 52428, Jülich, Germany
| | - Weiyuan Duan
- IEK-5 Photovoltaik, Forschungszentrum Jülich, 52428, Jülich, Germany
| | - Alaaeldin Gad
- IEK-5 Photovoltaik, Forschungszentrum Jülich, 52428, Jülich, Germany
| | - Matthias Geitner
- Helmholtz Nano Facility, Forschungszentrum Jülich, 52428, Jülich, Germany
| | - Jana Brugger
- Helmholtz Nano Facility, Forschungszentrum Jülich, 52428, Jülich, Germany
| | - Zongcun Liang
- School of Physics, Sun Yat-Sen University, Guangzhou, 510275, PR China
- Institute for Solar Energy Systems, Guangdong Provincial Key Laboratory of Photovoltaic Technology, Sun Yat-Sen University, 510006 Guangzhou, China
- State Key Laboratory of Optoelectronic Materials and Technologies, Sun Yat-Sen University, Guangzhou, Guangdong Province PR China
| | - Hui Shen
- School of Physics, Sun Yat-Sen University, Guangzhou, 510275, PR China
- Institute for Solar Energy Systems, Guangdong Provincial Key Laboratory of Photovoltaic Technology, Sun Yat-Sen University, 510006 Guangzhou, China
- State Key Laboratory of Optoelectronic Materials and Technologies, Sun Yat-Sen University, Guangzhou, Guangdong Province PR China
| | - Friedhelm Finger
- IEK-5 Photovoltaik, Forschungszentrum Jülich, 52428, Jülich, Germany
| | - Uwe Rau
- IEK-5 Photovoltaik, Forschungszentrum Jülich, 52428, Jülich, Germany
| | - Kaining Ding
- IEK-5 Photovoltaik, Forschungszentrum Jülich, 52428, Jülich, Germany
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Ferrari AM, Orlando R, Rérat M. Ab Initio Calculation of the Ultraviolet–Visible (UV-vis) Absorption Spectrum, Electron-Loss Function, and Reflectivity of Solids. J Chem Theory Comput 2015; 11:3245-58. [DOI: 10.1021/acs.jctc.5b00199] [Citation(s) in RCA: 41] [Impact Index Per Article: 4.6] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/29/2022]
Affiliation(s)
- Anna Maria Ferrari
- Dipartimento
di Chimica IFM, Università di Torino and Nanostructured Interfaces and Surfaces (NIS)—Centre of Excellence , Via P. Giuria 7, 10125 Torino, Italy
| | - Roberto Orlando
- Dipartimento
di Chimica IFM, Università di Torino and Nanostructured Interfaces and Surfaces (NIS)—Centre of Excellence , Via P. Giuria 7, 10125 Torino, Italy
| | - Michel Rérat
- Equipe
de Chimie
Physique, IPREM UMR5254, Université de Pau et des Pays de l’Adour, 64000 Pau, France
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