Visualization of different carrier concentrations in n-type-GaN semiconductors by phase-shifting electron holography with multiple electron biprisms

Cryogenic Focused Ion Beam Enables Atomic-Resolution Imaging of Local Structures in Highly Sensitive Bulk Crystals and Devices

With the development of ultralow-dose (scanning) transmission electron microscopy ((S)TEM) techniques, atomic-resolution imaging of highly sensitive nanomaterials has recently become possible. However, applying these techniques to the study of sensitive bulk materials remains challenging due to the lack of suitable specimen preparation methods. We report that cryogenic focused ion beam (cryo-FIB) can provide a solution to this challenge. We successfully extracted thin specimens from metal–organic framework (MOF) crystals and a hybrid halide perovskite single-crystal film solar cell using cryo-FIB without damaging the inherent structures. The high quality of the specimens enabled the subsequent (S)TEM and electron diffraction studies to reveal complex unknown local structures at an atomic resolution. The obtained structural information allowed us to resolve planar defects in MOF HKUST-1, three-dimensionally reconstruct a concomitant phase in MOF UiO-66, and discover a new CH₃NH₃PbI₃ structure and locate its distribution in a single-crystal film perovskite solar cell. This proof-of-concept study demonstrates that cryo-FIB has a unique ability to handle highly sensitive materials, which can substantially expand the range of applications for electron microscopy.

Phase-shifting electron holography for accurate measurement of potential distributions in organic and inorganic semiconductors

Phase-shifting electron holography (PS-EH) is an interference transmission electron microscopy technique that accurately visualizes potential distributions in functional materials, such as semiconductors. In this paper, we briefly introduce the features of the PS-EH that overcome some of the issues facing the conventional EH based on Fourier transformation. Then, we present a high-precision PS-EH technique with multiple electron biprisms and a sample preparation technique using a cryo-focused-ion-beam, which are important techniques for the accurate phase measurement of semiconductors. We present several applications of PS-EH to demonstrate the potential in organic and inorganic semiconductors and then discuss the differences by comparing them with previous reports on the conventional EH. We show that in situ biasing PS-EH was able to observe not only electric potential distribution but also electric field and charge density at a GaAs p-n junction and clarify how local band structures, depletion layer widths and space charges changed depending on the biasing conditions. Moreover, the PS-EH clearly visualized the local potential distributions of two-dimensional electron gas layers formed at AlGaN/GaN interfaces with different Al compositions. We also report the results of our PS-EH application for organic electroluminescence multilayers and point out the significant potential changes in the layers. The proposed PS-EH enables more precise phase measurement compared to the conventional EH, and our findings introduced in this paper will contribute to the future research and development of high-performance semiconductor materials and devices.