Validation of a MOSFET dosemeter system for determining the absorbed and effective radiation doses in diagnostic radiology

Effect of MOSFET dosimeters' calibration method on calibration factors and radiation doses measured with the dosimeters in radiology

MOSFET dosimeters have widely been used to measure radiation doses caused by x-rays. When using the MOSFET dosimeters, calibration factors (CFs) have a direct effect on reliability of dose measurements. The aim of this paper was to study the effect of various calibration methods on the CFs of the MOSFET dosimeters. The CFs were measured on clinical digital x-ray angiography (XA) and computed tomography (CT) devices using a calibrated CT ionization chamber and a standard polymethyl methacrylate (PMMA) phantom. The measurements were conducted by having the dosimeters (1) in air, (2) on the surface of the PMMA phantom and (3) inside the phantom. A statistically significant difference was seen between the CFs measured on the XA and CT devices. The CFs measured on the CT device were 20%-165% higher than those measured with the XA device (p < 0.001) in every calibration geometry. Furthermore, the calibration geometry had a notable effect on the CFs on CT. The CFs on the surface of the phantom were 18%-25% higher than in air (p < 0.05), and the CFs inside the phantom were 32%-39% smaller than in air (p < 0.05). These results suggest that the calibration of the MOSFET dosimeters should be conducted with the same device that is used in actual dose measurements. Also, the scattering conditions and the calibration geometry should be similar in the calibration and subsequent dose measurements.

Characterization of MOSFET dosimeters for low-dose measurements in maxillofacial anthropomorphic phantoms

The aims of this study were to characterize reinforced metal-oxide-semiconductor field-effect transistor (MOSFET) dosimeters to assess the measurement uncertainty, single exposure low-dose limit with acceptable accuracy, and the number of exposures required to attain the corresponding limit of the thermoluminescent dosimeters (TLD). The second aim was to characterize MOSFET dosimeter sensitivities for two dental photon energy ranges, dose dependency, dose rate dependency, and accumulated dose dependency. A further aim was to compare the performance of MOSFETs with those of TLDs in an anthropomorphic phantom head using a dentomaxillofacial CBCT device. The uncertainty was assessed by exposing 20 MOSFETs and a Barracuda MPD reference dosimeter. The MOSFET dosimeter sensitivities were evaluated for two photon energy ranges (50-90 kVp) using a constant dose and polymethylmethacrylate backscatter material. MOSFET and TLD comparative point-dose measurements were performed on an anthropomorphic phantom that was exposed with a clinical CBCT protocol. The MOSFET single exposure low dose limit (25% uncertainty, k = 2) was 1.69 mGy. An averaging of eight MOSFET exposures was required to attain the corresponding TLD (0.3 mGy) low-dose limit. The sensitivity was 3.09 ± 0.13 mV/mGy independently of the photon energy used. The MOSFET dosimeters did not present dose or dose rate sensitivity but, however, presented a 1% decrease of sensitivity per 1000 mV for accumulated threshold voltages between 8300 mV and 17500 mV. The point doses in an anthropomorphic phantom ranged for MOSFETs between 0.24 mGy and 2.29 mGy and for TLDs between 0.25 and 2.09 mGy, respectively. The mean difference was -8%. The MOSFET dosimeters presented statistically insignificant energy dependency. By averaging multiple exposures, the MOSFET dosimeters can achieve a TLD-comparable low-dose limit and constitute a feasible method for diagnostic dosimetry using anthropomorphic phantoms. However, for single in vivo measurements (<1.7 mGy) the sensitivity is too low.