Emergent phenomena at multiferroic heterointerfaces

High frequency characterization of Si 3 N 4 dielectrics for artificial magnetoelectric devices

Charge mediated magnetoelectric coupling mechanism in artificial multiferroics originates from interfacial charge modulation or ionic movement at a magnetic/dielectric interface. Despite the existence of several dielectric/ferroelectric systems that can be used in charge mediated artificial multiferroic systems, producing suitable systems with fast time responses still remains a challenge. Here we characterize the frequency response of stoichiometric and non-stoichiometric (low strain) Si 3 N 4 thin film membranes, which can potentially be used as the dielectric layer in magnetoelectric devices, to determine the impact of depletion layers, charge traps and defect mobility on the high frequency (up to 100 MHz) interfacial charge modulation via screening. We find that the dielectric/magnetoelectric properties are largely dominated by extrinsic doping due to point defects. In particular, we find that non-stoichiometric Si 3 N 4 has a dielectric behaviour that is dominated by charge traps and/or mobile ions. However, stoichiometric Si 3 N 4 membranes show a reversible response to the applied bias electric field consistent with a doped semiconductor behaviour; at high frequencies, the intrinsic dielectric behaviour is reached, indicating that it may be suitable for high frequency magnetoelectric device applications. Our results show that minimising the impact of defects on the dielectric properties of magnetoelectric heterostructures is an important prerequisite for obtaining a high frequency magnetoelectric response.

SUPPLEMENTARY INFORMATION

The online version contains supplementary material available at 10.1007/s10853-022-07832-2.

Magnetic and dielectric property control in the multivalent nanoscale perovskite Eu0.5Ba0.5TiO3

We report nanoscale Eu_0.5Ba_0.5TiO₃, a multiferroic in the bulk and candidate in the search to quantify the electric dipole moment of the electron. Eu_0.5Ba_0.5TiO₃, in the form of nanoparticles and other nanostructures is interesting for nanocomposite integration, biomedical imaging and fundamental research, based upon the prospect of polarizability, f-orbital magnetism and tunable optical/radio luminescence. We developed a [non-hydrolytic]sol-[H₂O-activated]gel route, derived from in-house metallic Ba_(s)/Eu_(s) alkoxide precursors and Ti{(OCH(CH₃)₂}₄. Two distinct nanoscale compounds of Ba:Ti:Eu with the parent perovskite crystal structure were produced, with variable dielectric, magnetic and optical properties, based on altering the oxidizing/reducing conditions. Eu_0.5Ba_0.5TiO₃ prepared under air/O₂ atmospheres produced a spherical core-shell nanostructure (30-35 nm), with perovskite Eu_0.5Ba_0.5TiO₃ nanocrystal core-insulating oxide shell layer (∼3 nm), presumed a pre-pyrochlore layer abundant with Eu³⁺. Fluorescence spectroscopy shows a high intensity ⁵D₀→⁷F₂ transition at 622 nm and strong red fluorescence. The core/shell structure demonstrated excellent capacitive properties: assembly into dielectric thin films gave low conductivity (2133 GΩ mm^-1) and an extremely stable, low loss permittivity of ε_eff∼25 over a wide frequency range (tan δ < 0.01, 100 kHz-2 MHz). Eu_0.5Ba_0.5TiO₃ prepared under H₂/argon produced more irregular shaped nanocrystals (20-25) nm, with a thin film permittivity around 4 times greater (ε_eff 101, tan δ < 0.05, 10 kHz-2 MHz, σ∼59.54 kΩ mm^-1). Field-cooled magnetization values of 0.025 emu g^-1 for EBTO-Air and 0.84 emu g^-1 for EBTO-Argon were observed. X-ray photoelectron spectroscopy analysis reveals a complex interplay of Eu^II/III/Ti^III/IV configurations which contribute to the observed ferroic and fluorescence behavior.

Polarization Control of the Interface Ferromagnetic to Antiferromagnetic Phase Transition in Co/Pb(Zr,Ti)O3

Based on first-principles calculations, we predict the polarization control of the interfacial magnetic phase and a giant electronically driven magnetoelectric coupling (MEC) in Co/PbZr_0.25Ti_0.75O₃ (PZT)(001). The effect of Co oxidation at the interface shared with (Zr,Ti)O₂-terminated PZT is evidenced. The magnetic phase of the oxidized Co interface layer is electrically switched from the ferromagnetic to the antiferromagnetic state by reversing the PZT polarization from upward to downward, respectively. A comparative study between oxidized and unoxidized Co/PZT interfaces shows that in oxidized Co/PZT bilayers, the variation of the interface spin moment upon polarization reversal exceeds that of unoxidized Co/PZT bilayers by about 1 order of magnitude. We define a surface MEC constant α_S taking into account the polarization dependence of both the spin and orbital moments. In unoxidized Co/PZT bilayers, we obtain α_S ≈ 2 × 10^-10 G cm² V^-1, while a giant surface coupling α_S ≈ 12 × 10^-10 G cm² V^-1 is found in the case of oxidized Co/PZT. We demonstrate that the polarization control of the magnetocrystalline anisotropy via spin-orbit coupling is not only effective at the interface but it extends to the Co film despite the interface origin of the MEC. This study shows that tailoring the nature of atomic bonding and electron occupancies allows for improving the performance of functional interfaces, enabling an efficient electric field control of spin-orbit interactions. Moreover, the nonlocal character of this effect holds promising perspectives for the application of electronically driven interface MEC in spin-orbitronic devices.

Nanoscale LuFeO3: shape dependent ortho/hexa-phase constitution and nanogenerator application

In multiferroic LuFeO₃ the hexagonal (-h) phase is an intermediate metastable phase encountered during the amorphous to orthorhombic (-o) transformation and is ferroelectric in nature. Thus far it has only been stabilized in a substrate-supported few layered ultrathin film form. Herein we show that the surface-induced strain field intrinsically present in nano-systems can self-stabilize this phase and the hexagonal to orthorhombic phase constitution ratio depends on the shape of the nanomaterial. Thus, nanoparticles (nanofibres) strain-stabilize the o : h ratio of about 75 : 25 (23 : 77). The inclusion of nano-LuFeO₃ into PDMS renders impressive nanogenerator performance, consistent with the ferroelectric phase content.

Engineering magnetism at functional oxides interfaces: manganites and beyond

The family of transition metal oxides (TMOs) is a large class of magnetic materials that has been intensively studied due to the rich physics involved as well as the promising potential applications in next generation electronic devices. In TMOs, the spin, charge, orbital and lattice are strongly coupled, and significant advances have been achieved to engineer the magnetism by different routes that manipulate these degrees of freedom. The family of manganites is a model system of strongly correlated magnetic TMOs. In this review, using manganites thin films and the heterostructures in conjunction with other TMOs as model systems, we review the recent progress of engineering magnetism in TMOs. We first discuss the role of the lattice that includes the epitaxial strain and the interface structural coupling. Then we look into the role of charge, focusing on the interface charge modulation. Having demonstrated the static effects, we continue to review the research on dynamical control of magnetism by electric field. Next, we review recent advances in heterostructures comprised of high T _c cuprate superconductors and manganites. Following that, we discuss the emergent magnetic phenomena at interfaces between 3d TMOs and 5d TMOs with strong spin-orbit coupling. Finally, we provide our outlook for prospective future directions.

Inversion of Ferrimagnetic Magnetization by Ferroelectric Switching via a Novel Magnetoelectric Coupling

Although several multiferroic materials or heterostructures have been extensively studied, finding strong magnetoelectric couplings for the electric field control of the magnetization remains challenging. Here, a novel interfacial magnetoelectric coupling based on three components (ferroelectric dipole, magnetic moment, and antiferromagnetic order) is analytically formulated. As an extension of carrier-mediated magnetoelectricity, the new coupling is shown to induce an electric-magnetic hysteresis loop. Realizations employing BiFeO_{3} bilayers grown along the [111] axis are proposed. Without involving magnetic phase transitions, the magnetization orientation can be switched by the carrier modulation driven by the field effect, as confirmed using first-principles calculations.

Multiferroic Domain Walls in Ferroelectric PbTiO3 with Oxygen Deficiency

Atomically thin multiferroics with the coexistence and cross-coupling of ferroelectric and (anti)ferromagnetic order parameters are promising for novel magnetoelectric nanodevices. However, such ferroic order disappears at a critical thickness in nanoscale. Here, we show a potential path toward ultrathin multiferroics by engineering an unusual domain wall (DW)-oxygen vacancy interaction in nonmagnetic ferroelectric PbTiO3. We demonstrate from first-principles that oxygen vacancies formed at the DW unexpectedly bring about magnetism with a localized spin moment around the vacancy. This magnetism originates from the orbital symmetry breaking of the defect electronic state due to local crystal symmetry breaking at the DW. Moreover, the energetics of defects shows the self-organization feature of oxygen vacancies at the DW, resulting in a planar-arrayed concentration of magnetic oxygen vacancies, which consequently changes the deficient DWs into multiferroic atomic layers. This DW-vacancy engineering opens up a new possibility for novel ultrathin multiferroic.

Multiferroic Heterostructures Integrating Ferroelectric and Magnetic Materials

Multiferroic heterostructures can be synthesized by integrating monolithic ferroelectric and magnetic materials, with interfacial coupling between electric polarization and magnetization, through the exchange of elastic, electric, and magnetic energy. Although the nature of the interfaces remains to be unraveled, such cross coupling can be utilized to manipulate the magnetization (or polarization) with an electric (or magnetic) field, known as a converse (or direct) magnetoelectric effect. It can be exploited to significantly improve the performance of or/and add new functionalities to many existing or emerging devices such as memory devices, tunable microwave devices, sensors, etc. The exciting technological potential, along with the rich physical phenomena at the interface, has sparked intensive research on multiferroic heterostructures for more than a decade. Here, we summarize the most recent progresses in the fundamental principles and potential applications of the interface-based magnetoelectric effect in multiferroic heterostructures, and present our perspectives on some key issues that require further study in order to realize their practical device applications.

Emergence of low dimensional ferroelectricity in Pr0.67Ca0.33MnO3 nanocrystal arrays

We discuss the emergence of low dimensional ferroelectricity in self-organized Pr_0.67Ca_0.33MnO₃ nanocrystalline arrays deposited on a Si substrate.

Multifunctional magnetoelectric materials for device applications

Over the past decade magnetoelectric (ME) mutiferroic (MF) materials and their devices are one of the highest priority research topics that has been investigated by the scientific ferroics community to develop the next generation of novel multifunctional materials. These systems show the simultaneous existence of two or more ferroic orders, and cross-coupling between them, such as magnetic spin, polarisation, ferroelastic ordering, and ferrotoroidicity. Based on the type of ordering and coupling, they have drawn increasing interest for a variety of device applications, such as magnetic field sensors, nonvolatile memory elements, ferroelectric photovoltaics, nano-electronics etc. Since single-phase materials exist rarely in nature with strong cross-coupling properties, intensive research activity is being pursued towards the discovery of new single-phase multiferroic materials and the design of new engineered materials with strong magneto-electric (ME) coupling. This review article summarises the development of different kinds of multiferroic material: single-phase and composite ceramic, laminated composite and nanostructured thin films. Thin-film nanostructures have higher magnitude direct ME coupling values and clear evidence of indirect ME coupling compared with bulk materials. Promising ME coupling coefficients have been reported in laminated composite materials in which the signal to noise ratio is good for device fabrication. We describe the possible applications of these materials.

Intrinsic interfacial phenomena in manganite heterostructures

We review recent advances in our understanding of interfacial phenomena that emerge when dissimilar materials are brought together at atomically sharp and coherent interfaces. In particular, we focus on phenomena that are intrinsic to the interface and review recent work carried out on perovskite manganites interfaces, a class of complex oxides whose rich electronic properties have proven to be a useful playground for the discovery and prediction of novel phenomena.

Hollandites as a new class of multiferroics

Discovery of new complex oxides that exhibit both magnetic and ferroelectric properties is of great interest for the design of functional magnetoelectrics, in which research is driven by the technologically exciting prospect of controlling charges by magnetic fields and spins by applied voltages, for sensors, 4-state logic, and spintronics. Motivated by the notion of a tool-kit for complex oxide design, we developed a chemical synthesis strategy for single-phase multifunctional lattices. Here, we introduce a new class of multiferroic hollandite Ba-Mn-Ti oxides not apparent in nature. BaMn₃Ti₄O_14.25, designated BMT-134, possesses the signature channel-like hollandite structure, contains Mn⁴⁺ and Mn³⁺ in a 1:1 ratio, exhibits an antiferromagnetic phase transition (T_N ~ 120 K) with a weak ferromagnetic ordering at lower temperatures, ferroelectricity, a giant dielectric constant at low frequency and a stable intrinsic dielectric constant of ~200 (1-100 MHz). With evidence of correlated antiferromagnetic and ferroelectric order, the findings point to an unexplored family of structures belonging to the hollandite supergroup with multifunctional properties, and high potential for developing new magnetoelectric materials.

Electric field control of ferromagnetism using multi-ferroics: the bismuth ferrite story

Since the re-emergence of multi-ferroics and magnetoelectrics almost a decade ago, bismuth ferrite has been among the most heavily studied model system. It is a multi-ferroic with robust ferroelectricity and antiferromagnetism, in conjunction with weak ferromagnetism arising primarily from spin-orbit coupling effects. This material system has generated a significant amount of discussion in the community, because many of the physical properties measured in thin films are different from the bulk. This paper summarizes some of the key observations in this versatile materials system, with a particular focus on thin films, heterostructures and interfacial phenomena.