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Jarwal B, Abbas S, Chou TL, Vailyaveettil SM, Kumar A, Quadir S, Ho TT, Wong DP, Chen LC, Chen KH. Boosting Thermoelectric Performance in Nanocrystalline Ternary Skutterudite Thin Films through Metallic CoTe 2 Integration. ACS APPLIED MATERIALS & INTERFACES 2024; 16:14770-14780. [PMID: 38489232 PMCID: PMC10982935 DOI: 10.1021/acsami.3c17695] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/25/2023] [Revised: 03/01/2024] [Accepted: 03/01/2024] [Indexed: 03/17/2024]
Abstract
Metal-semiconductor nanocomposites have emerged as a viable strategy for concurrently tailoring both thermal and electronic transport properties of established thermoelectric materials, ultimately achieving synergistic performance. In this investigation, a series of nanocomposite thin films were synthesized, embedding metallic cobalt telluride (CoTe2) nanophase within the nanocrystalline ternary skutterudite (Co(Ge1.22Sb0.22)Te1.58 or CGST) matrix. Our approach harnessed composition fluctuation-induced phase separation and in situ growth during thermal annealing to seamlessly integrate the metallic phase. The distinctive band structures of both materials have developed an ohmic-type contact characteristic at the interface, which raised carrier density considerably yet negligibly affected the mobility counterpart, leading to a substantial improvement in electrical conductivity. The intricate balance in transport properties is further influenced by the metallic CoTe2 phase's role in diminishing lattice thermal conductivity. The presence of the metallic phase instigates enhanced phonon scattering at the interface boundaries. Consequently, a 2-fold enhancement in the thermoelectric figure of merit (zT ∼ 1.30) is attained with CGST-7 wt. % CoTe2 nanocomposite film at 655 K compared to that of pristine CGST.
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Affiliation(s)
- Bhawna Jarwal
- Molecular
Science and Technology Program, Taiwan International
Graduate Program, Academia Sinica, Taipei 10617, Taiwan
- International
Graduate Program of Molecular Science and Technology, National Taiwan University, Taipei 10617, Taiwan
- Institute
of Atomic and Molecular Sciences, Academia Sinica, Taipei 10617, Taiwan
- Center
for Condensed Matter Sciences, National
Taiwan University, Taipei 10617, Taiwan
| | - Suman Abbas
- Molecular
Science and Technology Program, Taiwan International
Graduate Program, Academia Sinica, Taipei 10617, Taiwan
- Institute
of Atomic and Molecular Sciences, Academia Sinica, Taipei 10617, Taiwan
- Center
for Condensed Matter Sciences, National
Taiwan University, Taipei 10617, Taiwan
- Department
of Physics, National Central University, Taoyuan 32001, Taiwan
| | - Ta-Lei Chou
- Center
for Condensed Matter Sciences, National
Taiwan University, Taipei 10617, Taiwan
| | | | - Ashutosh Kumar
- Department
of Materials Science and Metallurgical Engineering, Indian Institute of Technology Bhilai, Durg, Chhattisgarh 491001, India
| | - Shaham Quadir
- Center
for Condensed Matter Sciences, National
Taiwan University, Taipei 10617, Taiwan
- Materials
Science Center, National Renewable Energy
Laboratory (NREL), Golden , Colorado 80401, United States
| | - Thi-Thong Ho
- Institute
of Atomic and Molecular Sciences, Academia Sinica, Taipei 10617, Taiwan
| | - Deniz P. Wong
- Helmholtz-Zentrum
Berlin für Materialien und Energie, Hahn-Meitner-Platz 1, Berlin D-14109, Germany
| | - Li-Chyong Chen
- Center
for Condensed Matter Sciences, National
Taiwan University, Taipei 10617, Taiwan
- Department
of Physics, National Taiwan University, Taipei 10617, Taiwan
- Center
of Atomic Initiative for New Materials, National Taiwan University, Taipei 10617, Taiwan
| | - Kuei-Hsien Chen
- Institute
of Atomic and Molecular Sciences, Academia Sinica, Taipei 10617, Taiwan
- Center
for Condensed Matter Sciences, National
Taiwan University, Taipei 10617, Taiwan
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Zhao N, Schwingenschlögl U. Transition from Schottky to Ohmic contacts in Janus MoSSe/germanene heterostructures. NANOSCALE 2020; 12:11448-11454. [PMID: 32451521 DOI: 10.1039/d0nr02084b] [Citation(s) in RCA: 6] [Impact Index Per Article: 1.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
The performance of an electronic device based on a two-dimensional material is strongly affected by the contact with the metallic electrodes. In this article, we study the electronic properties of two-dimensional MoSSe in contact with a germanene electrode by first-principles calculations. The results show that the contact characteristics are significantly different for the two sides of MoSSe. Notably, for both sides in-plane tensile strain induces a transition from Schottky to Ohmic behavior. Increasing the thickness of MoSSe also leads to an Ohmic contact. We propose an effective route to high performance MoSSe electronic devices.
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Affiliation(s)
- Ning Zhao
- Physical Science and Engineering Division (PSE), King Abdullah University of Science and Technology (KAUST), Thuwal, 23955-6900, Saudi Arabia.
| | - Udo Schwingenschlögl
- Physical Science and Engineering Division (PSE), King Abdullah University of Science and Technology (KAUST), Thuwal, 23955-6900, Saudi Arabia.
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Tenkyong T, Praveen B, Pugazhendhi K, Sharmila DJ, Shyla JM. Effect of the length of anodically grown titania nanotubes on the efficiency of a moisture-stable hole transport material (HTM)-free perovskite solar cell. CrystEngComm 2019. [DOI: 10.1039/c9ce00533a] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.6] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022]
Abstract
A simple and facile means of developing a cost-efficient, easily reproducible perovskite solar cell (PSC) is presented in this report.
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Affiliation(s)
- Tenzin Tenkyong
- Department of Physics
- Energy Nanotechnology Centre (ENTeC)
- Loyola Institute of Frontier Energy (LIFE)
- Loyola College
- Chennai 600 034
| | - B. Praveen
- Department of Physics
- Energy Nanotechnology Centre (ENTeC)
- Loyola Institute of Frontier Energy (LIFE)
- Loyola College
- Chennai 600 034
| | - K. Pugazhendhi
- Department of Physics
- Energy Nanotechnology Centre (ENTeC)
- Loyola Institute of Frontier Energy (LIFE)
- Loyola College
- Chennai 600 034
| | - D. J. Sharmila
- Department of Physics
- Energy Nanotechnology Centre (ENTeC)
- Loyola Institute of Frontier Energy (LIFE)
- Loyola College
- Chennai 600 034
| | - J. Merline Shyla
- Department of Physics
- Energy Nanotechnology Centre (ENTeC)
- Loyola Institute of Frontier Energy (LIFE)
- Loyola College
- Chennai 600 034
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Huan YW, Sun SM, Gu CJ, Liu WJ, Ding SJ, Yu HY, Xia CT, Zhang DW. Recent Advances in β-Ga 2O 3-Metal Contacts. NANOSCALE RESEARCH LETTERS 2018; 13:246. [PMID: 30136254 PMCID: PMC6104468 DOI: 10.1186/s11671-018-2667-2] [Citation(s) in RCA: 8] [Impact Index Per Article: 1.3] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 06/23/2018] [Accepted: 08/10/2018] [Indexed: 06/08/2023]
Abstract
Ultra-wide bandgap beta-gallium oxide (β-Ga2O3) has been attracting considerable attention as a promising semiconductor material for next-generation power electronics. It possesses excellent material properties such as a wide bandgap of 4.6-4.9 eV, a high breakdown electric field of 8 MV/cm, and exceptional Baliga's figure of merit (BFOM), along with superior chemical and thermal stability. These features suggest its great potential for future applications in power and optoelectronic devices. However, the critical issue of contacts between metal and Ga2O3 limits the performance of β-Ga2O3 devices. In this work, we have reviewed the advances on contacts of β-Ga2O3 MOSFETs. For improving contact properties, four main approaches are summarized and analyzed in details, including pre-treatment, post-treatment, multilayer metal electrode, and introducing an interlayer. By comparison, the latter two methods are being studied intensively and more favorable than the pre-treatment which would inevitably generate uncontrollable damages. Finally, conclusions and future perspectives for improving Ohmic contacts further are presented.
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Affiliation(s)
- Ya-Wei Huan
- State Key Laboratory of ASIC and System, School of Microelectronics, Fudan University, Shanghai, 200433 China
| | - Shun-Ming Sun
- State Key Laboratory of ASIC and System, School of Microelectronics, Fudan University, Shanghai, 200433 China
| | - Chen-Jie Gu
- Division of Microelectronics, School of Science, Ningbo University, Ningbo, 315211 China
| | - Wen-Jun Liu
- State Key Laboratory of ASIC and System, School of Microelectronics, Fudan University, Shanghai, 200433 China
| | - Shi-Jin Ding
- State Key Laboratory of ASIC and System, School of Microelectronics, Fudan University, Shanghai, 200433 China
| | - Hong-Yu Yu
- Department of Electrical and Electronic Engineering, Southern University of Science and Technology, Shenzhen, 518055 China
| | - Chang-Tai Xia
- Key Laboratory of Materials for High Power Laser, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Science, Shanghai, 201800 China
| | - David Wei Zhang
- State Key Laboratory of ASIC and System, School of Microelectronics, Fudan University, Shanghai, 200433 China
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Mandelis A, Siu EK. Combined photoacoustic and photoconductive spectroscopic investigation of nonradiative recombination and electronic transport phenomena in crystalline n-type CdS. I. Experiment. PHYSICAL REVIEW. B, CONDENSED MATTER 1986; 34:7209-7221. [PMID: 9939377 DOI: 10.1103/physrevb.34.7209] [Citation(s) in RCA: 14] [Impact Index Per Article: 0.4] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/11/2023]
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