Statistics for the transient response of single-mode semiconductor laser gain switching

Phase diffusion in gain-switched semiconductor lasers for quantum random number generation

In this paper, we report a theoretical and experimental study of the phase diffusion in a gain-switched single-mode semiconductor laser. Our modelling includes nonlinear dependencies of the carrier recombination rate and the semiconductor material gain on the carrier number. Also a comparison with the results obtained with linear models is performed. We focus on the below threshold operation, that is, the regime where most of the phase diffusion occurs in quantum random number generators based on the above mentioned system. Using the extracted parameters for our laser and simple analytical expressions for the laser linewidth, we show that logarithmic material gain and cubic carrier recombination dependence on the carrier number must be considered for a good agreement between experiments and theory. In this way we show that consideration of these nonlinearities is essential for obtaining a good quantitative description of the phase diffusion when using rate equations modelling.

Statistics of the Optical Phase of a Gain-Switched Semiconductor Laser for Fast Quantum Randomness Generation

The statistics of the optical phase of the light emitted by a semiconductor laser diode when subject to periodic modulation of the applied bias current are theoretically analyzed. Numerical simulations of the stochastic rate equations describing the previous system are performed to describe the temporal dependence of the phase statistics. These simulations are performed by considering two cases corresponding to random and deterministic initial conditions. In contrast to the Gaussian character of the phase that has been assumed in previous works, we show that the phase is not distributed as a Gaussian during the initial stages of evolution. We characterize the time it takes the phase to become Gaussian by calculating the dynamical evolution of the kurtosis coefficient of the phase. We show that, under the typical gain-switching with square-wave modulation used for quantum random number generation, quantity is in the ns time scale; that corresponds to the time it takes the system to lose the memory of the distribution of the initial conditions. We compare the standard deviation of the phase obtained with random and deterministic initial conditions to show that their differences become more important as the modulation speed is increased.

Analysis of the fast recovery dynamics of a semiconductor laser with feedback in the low-frequency fluctuation regime

We experimentally investigate the temporal evolution of the power of an external cavity semiconductor laser in the low-frequency fluctuation regime with subnanosecond resolution. We show, for the first time to our knowledge, that generally the laser power drops to a value significantly different from the solitary laser power. We demonstrate the analogy between the recovery of the laser intensity and the turn-on transient of a semiconductor laser.