Okabayashi N, Komaki K, Yamazaki Y. Enhanced sputtering from the F/Si(100) surface with extraction of the surface bond direction.
PHYSICAL REVIEW LETTERS 2011;
107:113201. [PMID:
22026664 DOI:
10.1103/physrevlett.107.113201]
[Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/27/2011] [Revised: 06/16/2011] [Indexed: 05/31/2023]
Abstract
It was found that slow highly charged ions had a high ability to ionize F atoms on a F/Si(100)-2×1 surface and desorb F+ ions along the local bond direction. Actually, the F+ ion yields were proportional to the incident charge cubed, and the F+ ions were emitted along the Si-F bond directions showing a fourfold symmetry pattern. The trigger process of the F+ formation is discussed based on a charge transfer process of F 2p electrons by extending the classical over barrier model. Further, we found that the kinetic energy of highly charged ion induced F+ ions is lower than that of electron stimulated F+ ions caused by the removal of a F 2s electron.
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