Energy dependence of the optical matrix element in hydrogenated amorphous and crystalline silicon

Novel BiOI/LaOXI〈IX〉 heterojunction with enhanced visible-light driven photocatalytic performance: unveiling the mechanism of interlayer electron transition

Improving visible light absorption plays an important role in the utilization of solar power for photocatalysis. Using first-principles calculations within the HSE06 functional, we propose that the semiconductor heterojunction BiOI/LaOXI〈IX〉 extends the optical absorption to the near-infrared range, boosts the absorption coefficient from 1.28 × 105 cm-1 to above 2.20 × 105 cm-1 in the visible light range, and increases the conversion efficiency of solar power up to 9.48%. The enhanced optical absorption derives from the significant interlayer transition and excitonic effect which benefit from polarized LaOXI with a flat band in the highest valence band (VB). In BiOI/LaOClI〈ICl 〉, the electrostatic potential difference (ΔΦ) modifies the band edge positions to meet the requirements for photocatalytic overall water splitting, while the polarized electric field (Ep) accelerates the separation of photogenerated carriers and regulates the overpotentials of photogenerated carriers following a direct Z-scheme strategy. In addition, BiOI/LaOXI〈IX〉 is dynamically and thermodynamically stable. Furthermore, only a low external potential is needed to drive the redox reaction. Our theoretical results suggest that BiOI/LaOXI〈IX〉 could be a potential photocatalyst for overall water splitting with enhanced visible light absorption.

How to read optical properties of matter via the Kubo-Greenwood approach

Substances with a complex electronic structure exhibit non-Drude optical properties that are challenging to interpret experimentally and theoretically. In our recent paper [Phys. Rev. E 105, 035307 (2022)2470-004510.1103/PhysRevE.105.035307], we offered a computational method based on the continuous Kubo-Greenwood formula, which expresses dynamic conductivity as an integral over the electron spectrum. In this Letter, we propose a methodology to analyze the complex conductivity using liquid Zr as an example to explain its nontrivial behavior. To achieve this, we apply the continuous Kubo-Greenwood formula and extend it to include the imaginary part of the complex conductivity into the analysis. Our method is suitable for a wide range of substances, providing an opportunity to explain optical properties from ab initio calculations of any difficulty.

Optical absorption of bismuthene with a single vacancy: first-principle calculations

The exceptional mechanical, electronic, topological, and optical properties, make bismuthene an ideal candidate for various applications in ultrafast saturation absorption and spintronics. Despite the extensive research efforts devoted to synthesizing this material, the introduction of defects, which can significantly affect its properties, remains a substantial obstacle. In this study, we investigate the transition dipole moment and joint density of states of bismuthene with/without single vacancy defect via energy band theory and interband transition theory. It is demonstrated that the existence of the single defect enhances the dipole transition and joint density of states at lower photon energies, ultimately resulting in an additional absorption peak in the absorption spectrum. Our results suggest that the manipulation of defects in bismuthene has enormous potential for improving the optoelectronic properties of this material.

Continuous Kubo-Greenwood formula: Theory and numerical implementation

In this paper, we present the so-called continuous Kubo-Greenwood formula intended for the numerical calculation of the dynamic Onsager coefficients and, in particular, the real part of dynamic electrical conductivity. In contrast to the usual Kubo-Greenwood formula, which contains the summation over a discrete set of transitions between electron energy levels, the continuous one is formulated as an integral over the whole energy range. This integral includes the continuous functions: the smoothed squares of matrix elements, D(ɛ,ɛ+ℏω), the densities of state, g(ɛ)g(ɛ+ℏω), and the difference of the Fermi weights, [f(ɛ)-f(ɛ+ℏω)]/(ℏω). The function D(ɛ,ɛ+ℏω) is obtained via the specially developed smoothing procedure. From the theoretical point of view, the continuous formula is an alternative to the usual one. Both can be used to calculate matter properties and produce close results. However, the continuous formula includes the smooth functions that can be plotted and examined. Thus, we can analyze the contributions of various parts of the electron spectrum to the obtained properties. The possibility of such analysis is the main advantage of the continuous formula. The continuous Kubo-Greenwood formula is implemented in the parallel code cubogram. Using the code we demonstrate the influence of technical parameters on the simulation results for liquid aluminum. We also analyze various methods of matrix elements computation and their effect on dynamic electrical conductivity.

Revisiting the Determination of the Valence Band Maximum and Defect Formation in Halide Perovskites for Solar Cells: Insights from Highly Sensitive Near-UV Photoemission Spectroscopy

Using advanced near-UV photoemission spectroscopy (PES) in constant final state mode (CFSYS) with a very high dynamic range, we investigate the triple-cation lead halide perovskite Cs_0.05(MA_0.17FA_0.83)_0.95Pb(I_0.83Br_0.17)₃ and gain detailed insights into the density of occupied states (DOS) in the valence band and band gap. A valence band model is established which includes the parabolic valence band edge and an exponentially decaying band tail in a single equation. This allows us to precisely determine two valence band maxima (VBM) at different k-vectors in the angle-integrated spectra, where the highest one, resulting from the VBM at the R-point in the Brillouin zone, is found between -1.50 to -1.37 eV relative to the Fermi energy E_F. We investigate quantitatively the formation of defect states in the band gap up to E_F upon decomposition of the perovskites during sample transfer, storage, and measurements: during near-UV-based PES, the density of defect states saturates at a value that is around 4 orders of magnitude below the density of states at the valence band edge. However, even short air exposure, or 3 h of X-ray illumination, increased their density by almost a factor of six and ∼40, respectively. Upon prolonged storage in vacuum, the formation of a distinct defect peak is observed. Thus, near-UV CFSYS with modeling as shown here is demonstrated as a powerful tool to characterize the valence band and quantify defect states in lead halide perovskites.

Phosphorene: Synthesis, Scale-Up, and Quantitative Optical Spectroscopy

Phosphorene, a two-dimensional (2D) monolayer of black phosphorus, has attracted considerable theoretical interest, although the experimental realization of monolayer, bilayer, and few-layer flakes has been a significant challenge. Here, we systematically survey conditions for liquid exfoliation to achieve the first large-scale production of monolayer, bilayer, and few-layer phosphorus, with exfoliation demonstrated at the 10 g scale. We describe a rapid approach for quantifying the thickness of 2D phosphorus and show that monolayer and few-layer flakes produced by our approach are crystalline and unoxidized, while air exposure leads to rapid oxidation and the production of acid. With large quantities of 2D phosphorus now available, we perform the first quantitative measurements of the material's absorption edge-which is nearly identical to the material's band gap under our experimental conditions-as a function of flake thickness. Our interpretation of the absorbance spectrum relies on an analytical method introduced in this work, allowing the accurate determination of the absorption edge in polydisperse samples of quantum-confined semiconductors. Using this method, we found that the band gap of black phosphorus increased from 0.33 ± 0.02 eV in bulk to 1.88 ± 0.24 eV in bilayers, a range that is larger than that of any other 2D material. In addition, we quantified a higher-energy optical transition (VB-1 to CB), which changes from 2.0 eV in bulk to 3.23 eV in bilayers. This work describes several methods for producing and analyzing 2D phosphorus while also yielding a class of 2D materials with unprecedented optoelectronic properties.

Open-Circuit Voltage Physics in Amorphous Silicon Solar Cells

We have performed computer calculations to explore effects of the p/i interface on the open-circuit voltage in a-Si:H based pin solar cells. The principal conclusions are that interface limitation can occur for values of VOC significantly below the built-in potential VBI of a cell, and that the effects can be understood in terms of thermionic emission of electrons from the intrinsic layer into the p-layer. We compare measurements of VOC and electroabsorption estimates of VBI with the model calculations. We conclude that p/i interface limitation is important for current a-Si:H based cells, and that the conduction band offset between the p and i layers is as important as the built-in potential for future improvements to VOC.

Comparison of the Optical Cross Section for the Si Dangling Bond in a- Si:H and At the c - Si/SiO2 Interface

The optical properties of the trivalent silicon dangling bond defect in hydrogenated amorphous silicon and at the Si/SiO2 interface are compared. While both defects give rise to ambipolar deep levels within the gap, significant differences in the optical properties between the two systems are found. The absorption in a-Si:H is significantly stronger and is dominated by a transition from the defect to the conduction band while the absorption at the interface is dominated by hole emission. The average dipole matrix element squared is roughly independent of energy in both systems with a magnitude of ∼30Å2. Implications of these results for optical measurements in other silicon systems are discussed.

Optical Properties of Hydrogenated Amorphous Silicon, Silicon-Germanium and Silicon-Carbon Thin Films

The optical properties of solar cell grade hydrogenated amorphous silicon (a-Si:H), silicon germanium (a-SiGe:H) and silicon carbon (a-SiC:H) alloy thin films have been investigated over a wide photon energy range (0.8–4.8 eV) using a combination of subgap photoconductivity, reflection and transmission, and spectroscopie ellipsometry techniques in order to obtain accurate optical functions for solar cell modelling. Studies on films with thicknesses ranging from a few hundred Å to a few microns show that the optical spectra obtained by the different techniques agree closely over the energy ranges of overlap and display no thickness dependence from the Urbach tail energies and above. Thus, the results appear to be free of measurement and sample related artifacts. Three different methods provide a common value for the optical gap within ±0.02 eV and the result for a-Si:H is ∼0.1 eV below the mobility gap.

Bandtail Limits to Solar Conversion Efficiencies in Amorphous Silicon Solar Cells

We describe a model for a-Si:H based pin solar cells derived primarily from valence bandtail properties. We show how hole drift-mobility measurements and measurements of the temperature-dependence of the open-circuit voltage VOC can be used to estimate the parameters, and we present VOC(T) measurements. We compared the power density under solar illumination calculated with this model with published results for as-deposited a-Si:H solar cells. The agreement is within 4% for a range of thicknesses, suggesting that the power from as-deposited cells is close to the bandtail limit.

Ultrathin SiO(2) layers on Si(111): preparation, interface gap states and the influence of passivation

An essential prerequisite for the successful application of Si/SiO(2) nanostructures in photovoltaics is the realization of well-defined and abrupt interfaces with low densities of interface gap states. Here, a complete in situ process from preparation and hydrogen passivation to interface gap state analysis by near-UV photoelectron spectroscopy without breaking ultrahigh vacuum (UHV) conditions is introduced. It is demonstrated that by RF plasma oxidation of Si(111) substrates with thermalized neutral oxygen atoms, ultrathin SiO(2) layers can be realized with compositionally and structurally abrupt Si/SiO(2) interfaces and a minimal amount of intermediate oxidation states bridging the transition from Si to SiO(2). Plasma oxidized samples have significantly lower interface gap states than samples oxidized by thermal oxidation at 850 °C. Interface gap state densities were further reduced by in situ hydrogen plasma passivation with nearly thermalized H atoms. The resulting reduction of interface recombination velocity and the increase of effective majority and minority carrier lifetimes are revealed by constant photocurrent measurements and quasi-steady-state photoconductance, respectively.