Temperature dependence of the quantized Hall effect

Observation of fractionally quantized anomalous Hall effect

The integer quantum anomalous Hall (QAH) effect is a lattice analogue of the quantum Hall effect at zero magnetic field1-3. This phenomenon occurs in systems with topologically non-trivial bands and spontaneous time-reversal symmetry breaking. Discovery of its fractional counterpart in the presence of strong electron correlations, that is, the fractional QAH effect4-7, would open a new chapter in condensed matter physics. Here we report the direct observation of both integer and fractional QAH effects in electrical measurements on twisted bilayer MoTe2. At zero magnetic field, near filling factor ν = -1 (one hole per moiré unit cell), we see an integer QAH plateau in the Hall resistance Rxy quantized to h/e2 ± 0.1%, whereas the longitudinal resistance Rxx vanishes. Remarkably, at ν  =  -2/3 and -3/5, we see plateau features in Rxy at [Formula: see text] and [Formula: see text], respectively, whereas Rxx remains small. All features shift linearly versus applied magnetic field with slopes matching the corresponding Chern numbers -1, -2/3 and -3/5, precisely as expected for integer and fractional QAH states. Additionally, at zero magnetic field, Rxy is approximately 2h/e2 near half-filling (ν  = -1/2) and varies linearly as ν  is tuned. This behaviour resembles that of the composite Fermi liquid in the half-filled lowest Landau level of a two-dimensional electron gas at high magnetic field8-14. Direct observation of the fractional QAH and associated effects enables research in charge fractionalization and anyonic statistics at zero magnetic field.

Phonon-drag thermopower and thermoelectric performance of MoS2monolayer in quantizing magnetic field

We present a theory of phonon-drag thermopower,Sxxg, in MoS₂monolayer at a low-temperature regime in the presence of a quantizing magnetic fieldB. Our calculations forSxxgconsider the electron-acoustic phonon interaction via deformation potential (DP) and piezoelectric (PE) couplings for longitudinal (LA) and transverse (TA) phonon modes. The unscreened TA-DP is found to dominateSxxgover other mechanisms. TheSxxgis found to oscillate with the magnetic field where the lifting effect of the valley and spin degeneracies in MoS₂monolayer has been clearly observed. An enhancedSxxgwith a peak value of∼1mV K^-1at aboutT = 10 K is predicted, which is closer to the zero field experimental observation. In the Bloch-Grüneisen regime the temperature dependence ofSxxggives the power-lawSxxg∝Tδe, whereδ_evaries marginally around 3 and 5 for unscreened and screened couplings, respectively. In addition,Sxxgis smaller for larger electron densityn_e. The power factor PF is found to increase with temperatureT, decrease withn_e, and oscillate withB. The prediction of an increase of thermal conductivity with temperature and the magnetic field is responsible for the limit of the figure of merit (ZT). At a particular magnetic field and temperature,ZTcan be maximized by optimizing electron density. By fixingne=1012cm^-2, the highestZTis found to be 0.57 atT = 5.8 K andB = 12.1 T. Our findings are compared with those in graphene and MoS₂for the zero-magnetic field.

Fractional quantum Hall effects in In0.75Ga0.25As bilayer electron systems observed as "Finger print"

Observations of fractional quantum Hall (FQH) plateaus are reported in bilayer electron gas system in wide (>80 nm) In0.75Ga0.25As wells. Several q/p (p = 5, 3, and 2, q > 5) QH states are confirmed at high temperatures (~1.6 K) when the critical conditions including an electron density imbalance as well as a dynamical resistance behavior at the bilayer-monolayer transition are properly satisfied. The former leads to a quantum limit in either of the layers and the latter might bring a meta-stable nature into FQH phenomena. Such a behavior occurs as a probability process associating with impurities or defects in the wells, they inevitably reflect the local structural landscapes of each sample. This is verified by the new finding that the kinds of fractional plateaus (what set of fractional filling factors) appeared are different depending on the samples, that is, they are the "finger print" in each sample.

Inelastic electron backscattering in a generic helical edge channel

We evaluate the low-temperature conductance of a weakly interacting one-dimensional helical liquid without axial spin symmetry. The lack of that symmetry allows for inelastic backscattering of a single electron, accompanied by forward scattering of another. This joint effect of weak interactions and potential scattering off impurities results in a temperature-dependent deviation from the quantized conductance, δG ∝ T4. In addition, δG is sensitive to the position of the Fermi level. We determine numerically the parameters entering our generic model for the Bernevig-Hughes-Zhang Hamiltonian of a HgTe/CdTe quantum well in the presence of Rashba spin-orbit coupling.