Quantum Hall effect in In0.53Ga0.47As-InP heterojunctions with two populated electric subbands

Fractional quantum Hall effects in In0.75Ga0.25As bilayer electron systems observed as "Finger print"

Observations of fractional quantum Hall (FQH) plateaus are reported in bilayer electron gas system in wide (>80 nm) In0.75Ga0.25As wells. Several q/p (p = 5, 3, and 2, q > 5) QH states are confirmed at high temperatures (~1.6 K) when the critical conditions including an electron density imbalance as well as a dynamical resistance behavior at the bilayer-monolayer transition are properly satisfied. The former leads to a quantum limit in either of the layers and the latter might bring a meta-stable nature into FQH phenomena. Such a behavior occurs as a probability process associating with impurities or defects in the wells, they inevitably reflect the local structural landscapes of each sample. This is verified by the new finding that the kinds of fractional plateaus (what set of fractional filling factors) appeared are different depending on the samples, that is, they are the "finger print" in each sample.

Observation of the quantum Hall effect in δ-doped SrTiO3

The quantum Hall effect is a macroscopic quantum phenomenon in a two-dimensional electron system. The two-dimensional electron system in SrTiO3 has sparked a great deal of interest, mainly because of the strong electron correlation effects expected from the 3d orbitals. Here we report the observation of the quantum Hall effect in a dilute La-doped SrTiO3-two-dimensional electron system, fabricated by metal organic molecular-beam epitaxy. The quantized Hall plateaus are found to be solely stemming from the low Landau levels with even integer-filling factors, ν=4 and 6 without any contribution from odd ν's. For ν=4, the corresponding plateau disappears on decreasing the carrier density. Such peculiar behaviours are proposed to be due to the crossing between the Landau levels originating from the two subbands composed of d orbitals with different effective masses. Our findings pave a way to explore unprecedented quantum phenomena in d-electron systems.

Multiple phases with the same quantized Hall conductance in a two-subband system

In a two-dimensional electron system with two occupied subbands, the experimentally determined phase diagram in the density-magnetic field plane exhibits rich topological features. Ringlike structures are observed at even integer filling factors in the phase diagram. Even with the identical quantized Hall resistance values as those given by the ordinary integer quantum Hall effect due to the Landau level quantization, the activation energies of these states within the rings are much smaller. These ring structures cannot be accounted for by the simple single particle picture. We argue that ferromagnetic quantum Hall states, due to the interaction of two energy levels with opposite spin and different subband indices, are responsible for these unusual structures.

Magnetization measurements of magnetic two-dimensional electron gases

We directly measure the magnetization of both the conduction electrons and Mn2+ ions in (Zn,Cd,Mn)Se two-dimensional electron gases (2DEGs) by integrating them into ultrasensitive micromechanical magnetometers. The interplay between spin and orbital energy in these magnetic 2DEGs causes Landau level degeneracies at the Fermi energy. These Landau level crossings result in novel features in the de Haas-van Alphen oscillations, which are quantitatively reproduced by a simple model.