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Hong SC, Ho MS, Lu HF, Sun YC. Calculated Life Times of the First (v=1) Hydrogen Stretching Excited State on Hydrogen-Covered H/Ge(111 )Germanium Surface. J CHIN CHEM SOC-TAIP 2013. [DOI: 10.1002/jccs.200000119] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.2] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/07/2022]
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Sakong S, Kratzer P, Han X, Balgar T, Hasselbrink E. Isotope effects in the vibrational lifetime of hydrogen on germanium(100): Theory and experiment. J Chem Phys 2009; 131:124502. [DOI: 10.1063/1.3224121] [Citation(s) in RCA: 12] [Impact Index Per Article: 0.8] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/14/2022] Open
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David ML, Pizzagalli L, Pailloux F, Barbot JF. Atomic scale structure of (001) hydrogen-induced platelets in germanium. PHYSICAL REVIEW LETTERS 2009; 102:155504. [PMID: 19518649 DOI: 10.1103/physrevlett.102.155504] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.1] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/09/2009] [Indexed: 05/27/2023]
Abstract
An accurate characterization of the structure of hydrogen-induced platelets is a prerequisite for investigating both hydrogen aggregation and formation of larger defects. On the basis of quantitative high resolution transmission electron microscopy experiments combined with extensive first principles calculations, we present a model for the atomic structure of (001) hydrogen-induced platelets in germanium. It involves broken Ge-Ge bonds in the [001] direction that are dihydride passivated, vacancies, and trapped H(2) molecules, showing that the species involved in platelet formation depend on the habit plane. This model explains all previous experimental observations.
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Affiliation(s)
- Marie-Laure David
- Laboratoire PHYMAT, Université de Poitiers/CNRS UMR 6630, 86962 Futuroscope-Chasseneuil cedex, France
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Han X, Balgar T, Hasselbrink E. Vibrational dynamics of hydrogen on Ge surfaces. J Chem Phys 2009; 130:134701. [DOI: 10.1063/1.3102438] [Citation(s) in RCA: 15] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/14/2022] Open
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Loscutoff PW, Bent SF. REACTIVITY OF THE GERMANIUM SURFACE: Chemical Passivation and Functionalization. Annu Rev Phys Chem 2006; 57:467-95. [PMID: 16599818 DOI: 10.1146/annurev.physchem.56.092503.141307] [Citation(s) in RCA: 194] [Impact Index Per Article: 10.8] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/09/2022]
Abstract
With the rapidly changing materials needs of modern microelectronics, germanium provides an opportunity for future-generation devices. Controlling germanium interfaces will be essential for this purpose. We review germanium surface reactivity, beginning with a description of the most commonly used surfaces, Ge(100) and Ge(111). An analysis of oxide formation shows why the poor oxide properties have hindered practical use of germanium to date. This is followed by an examination of alternate means of surface passivation, with particular attention given to sulfide, chloride, and hydride termination. Specific tailoring of the interface properties is possible through organic functionalization. The few solution functionalization methods that have been studied are reviewed. Vacuum functionalization has been studied to a much greater extent, with dative bonding and cycloaddition reactions emerging as principle reaction mechanisms. These are reviewed through molecular reaction studies that demonstrate the versatility of the germanium surface.
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Affiliation(s)
- Paul W Loscutoff
- Department of Chemical Engineering, Stanford University, Stanford, California 94305, USA.
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Lee JY, Maeng JY, Kim A, Cho YE, Kim S. Kinetics of H2 (D2) desorption from a Ge(100)-2×1:H (D) surface studied using scanning tunneling microscopy and temperature programmed desorption. J Chem Phys 2003. [DOI: 10.1063/1.1531662] [Citation(s) in RCA: 29] [Impact Index Per Article: 1.4] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/14/2022] Open
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Murota J, Matsuura T, Sakuraba M. Atomically controlled processing for group IV semiconductors. SURF INTERFACE ANAL 2002. [DOI: 10.1002/sia.1331] [Citation(s) in RCA: 38] [Impact Index Per Article: 1.7] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/11/2022]
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Wang JK, Tsai CS, Lin CE, Lin JC. Vibrational dephasing dynamics at hydrogenated and deuterated semiconductor surfaces: Symmetry analysis. J Chem Phys 2000. [DOI: 10.1063/1.1289928] [Citation(s) in RCA: 16] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/14/2022] Open
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Eggeling J, Bell GR, Jones TS. Vibrational Excitation Mechanisms in Electron Energy Loss Spectroscopy Studies of Hydrogen Adsorbed on Si(100) and Ge(100). J Phys Chem B 1999. [DOI: 10.1021/jp992217p] [Citation(s) in RCA: 13] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/28/2022]
Affiliation(s)
- J. Eggeling
- Department of Chemistry and Centre for Electronic Materials and Devices, Imperial College of Science, Technology and Medicine, London SW7 2AY, U.K
| | - G. R. Bell
- Department of Chemistry and Centre for Electronic Materials and Devices, Imperial College of Science, Technology and Medicine, London SW7 2AY, U.K
| | - T. S. Jones
- Department of Chemistry and Centre for Electronic Materials and Devices, Imperial College of Science, Technology and Medicine, London SW7 2AY, U.K
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Rohlfing M, Krüger P, Pollmann J. Quasiparticle band structures of clean, hydrogen-, and sulfur-terminated Ge(001) surfaces. PHYSICAL REVIEW. B, CONDENSED MATTER 1996; 54:13759-13766. [PMID: 9985293 DOI: 10.1103/physrevb.54.13759] [Citation(s) in RCA: 20] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
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Ku JH, Nemanich RJ. Surface electronic structure of clean and hydrogen-chemisorbed SixGe1-x alloy surfaces. PHYSICAL REVIEW. B, CONDENSED MATTER 1996; 54:14102-14110. [PMID: 9985333 DOI: 10.1103/physrevb.54.14102] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
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Pflanz S, Buchtler R, Moritz W, Over H. Dimer bond geometry in D/Ge(100)-(2 x 1): A low-energy electron-diffraction structure analysis. PHYSICAL REVIEW. B, CONDENSED MATTER 1996; 54:R8313-R8316. [PMID: 9984583 DOI: 10.1103/physrevb.54.r8313] [Citation(s) in RCA: 4] [Impact Index Per Article: 0.1] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
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Lewis LB, Segall J, Janda KC. Recombinative desorption of hydrogen from the Ge(100)–(2×1) surface: A laser‐induced desorption study. J Chem Phys 1995. [DOI: 10.1063/1.469117] [Citation(s) in RCA: 37] [Impact Index Per Article: 1.3] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/14/2022] Open
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D’Evelyn MP, Yang YL, Cohen SM. Adsorption, desorption, and decomposition of HCl and HBr on Ge(100): Competitive pairing and near‐first‐order desorption kinetics. J Chem Phys 1994. [DOI: 10.1063/1.467686] [Citation(s) in RCA: 23] [Impact Index Per Article: 0.8] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/14/2022] Open
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Landemark E, Karlsson CJ, Johansson LS, Uhrberg RI. Electronic structure of clean and hydrogen-chemisorbed Ge(001) surfaces studied by photoelectron spectroscopy. PHYSICAL REVIEW. B, CONDENSED MATTER 1994; 49:16523-16533. [PMID: 10010805 DOI: 10.1103/physrevb.49.16523] [Citation(s) in RCA: 34] [Impact Index Per Article: 1.1] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
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Lu G, Crowell JE. The adsorption and thermal decomposition of digermane on Ge(111). J Chem Phys 1993. [DOI: 10.1063/1.464060] [Citation(s) in RCA: 33] [Impact Index Per Article: 1.1] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/14/2022] Open
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D’Evelyn MP, Cohen SM, Rouchouze E, Yang YL. Surface π bonding and the near‐first‐order desorption kinetics of hydrogen from Ge(100)2×1. J Chem Phys 1993. [DOI: 10.1063/1.464078] [Citation(s) in RCA: 47] [Impact Index Per Article: 1.5] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/14/2022] Open
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Cho J, Nemanich RJ. Surface electronic states of low-temperature H-plasma-exposed Ge(100). PHYSICAL REVIEW. B, CONDENSED MATTER 1992; 46:12421-12426. [PMID: 10003158 DOI: 10.1103/physrevb.46.12421] [Citation(s) in RCA: 7] [Impact Index Per Article: 0.2] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
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Papagno L, Caputi LS, Anderson J, Lapeyre GJ. Comparative study of water adsorption on Ge(100)-(2 x 1) and GexSi1-x(100)-(2 x 1) by high-resolution electron-energy-loss spectroscopy. PHYSICAL REVIEW. B, CONDENSED MATTER 1989; 40:8443-8445. [PMID: 9991308 DOI: 10.1103/physrevb.40.8443] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.1] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
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Leung KT, Terminello LJ, Hussain Z, Zhang XS, Hayashi T, Shirley DA. Surface-bonding geometry of (2 x 1)S/Ge(001) by the normal-emission angle-resolved photoemission extended-fine-structure technique. PHYSICAL REVIEW. B, CONDENSED MATTER 1988; 38:8241-8248. [PMID: 9945577 DOI: 10.1103/physrevb.38.8241] [Citation(s) in RCA: 21] [Impact Index Per Article: 0.6] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/11/2023]
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Kaxiras E, Joannopoulos JD. Hydrogenation of semiconductor surfaces: Si and Ge (111). PHYSICAL REVIEW. B, CONDENSED MATTER 1988; 37:8842-8848. [PMID: 9944251 DOI: 10.1103/physrevb.37.8842] [Citation(s) in RCA: 35] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/11/2023]
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