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For: Papagno L, Shen XY, Anderson J, Lapeyre GJ. Hydrogen adsorption on Ge(100) studied by high-resolution energy-loss spectroscopy. Phys Rev B Condens Matter 1986;34:7188-7191. [PMID: 9939374 DOI: 10.1103/physrevb.34.7188] [Citation(s) in RCA: 42] [Impact Index Per Article: 1.1] [Reference Citation Analysis] [What about the content of this article? (0)] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/11/2023]
Number Cited by Other Article(s)
1
Hong SC, Ho MS, Lu HF, Sun YC. Calculated Life Times of the First (v=1) Hydrogen Stretching Excited State on Hydrogen-Covered H/Ge(111 )Germanium Surface. J CHIN CHEM SOC-TAIP 2013. [DOI: 10.1002/jccs.200000119] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.2] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/07/2022]
2
Sakong S, Kratzer P, Han X, Balgar T, Hasselbrink E. Isotope effects in the vibrational lifetime of hydrogen on germanium(100): Theory and experiment. J Chem Phys 2009;131:124502. [DOI: 10.1063/1.3224121] [Citation(s) in RCA: 12] [Impact Index Per Article: 0.8] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/14/2022]  Open
3
David ML, Pizzagalli L, Pailloux F, Barbot JF. Atomic scale structure of (001) hydrogen-induced platelets in germanium. PHYSICAL REVIEW LETTERS 2009;102:155504. [PMID: 19518649 DOI: 10.1103/physrevlett.102.155504] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.1] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/09/2009] [Indexed: 05/27/2023]
4
Han X, Balgar T, Hasselbrink E. Vibrational dynamics of hydrogen on Ge surfaces. J Chem Phys 2009;130:134701. [DOI: 10.1063/1.3102438] [Citation(s) in RCA: 15] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/14/2022]  Open
5
Loscutoff PW, Bent SF. REACTIVITY OF THE GERMANIUM SURFACE: Chemical Passivation and Functionalization. Annu Rev Phys Chem 2006;57:467-95. [PMID: 16599818 DOI: 10.1146/annurev.physchem.56.092503.141307] [Citation(s) in RCA: 194] [Impact Index Per Article: 10.8] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/09/2022]
6
Lee JY, Maeng JY, Kim A, Cho YE, Kim S. Kinetics of H2 (D2) desorption from a Ge(100)-2×1:H (D) surface studied using scanning tunneling microscopy and temperature programmed desorption. J Chem Phys 2003. [DOI: 10.1063/1.1531662] [Citation(s) in RCA: 29] [Impact Index Per Article: 1.4] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/14/2022]  Open
7
Murota J, Matsuura T, Sakuraba M. Atomically controlled processing for group IV semiconductors. SURF INTERFACE ANAL 2002. [DOI: 10.1002/sia.1331] [Citation(s) in RCA: 38] [Impact Index Per Article: 1.7] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/11/2022]
8
Ateca S, Bater C, Sanders M, Craig JH. Adsorption studies of digermane and disilane on Ge(100). SURF INTERFACE ANAL 2000. [DOI: 10.1002/(sici)1096-9918(200003)29:3<194::aid-sia682>3.0.co;2-t] [Citation(s) in RCA: 9] [Impact Index Per Article: 0.4] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/11/2022]
9
Wang JK, Tsai CS, Lin CE, Lin JC. Vibrational dephasing dynamics at hydrogenated and deuterated semiconductor surfaces: Symmetry analysis. J Chem Phys 2000. [DOI: 10.1063/1.1289928] [Citation(s) in RCA: 16] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/14/2022]  Open
10
Eggeling J, Bell GR, Jones TS. Vibrational Excitation Mechanisms in Electron Energy Loss Spectroscopy Studies of Hydrogen Adsorbed on Si(100) and Ge(100). J Phys Chem B 1999. [DOI: 10.1021/jp992217p] [Citation(s) in RCA: 13] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/28/2022]
11
Rohlfing M, Krüger P, Pollmann J. Quasiparticle band structures of clean, hydrogen-, and sulfur-terminated Ge(001) surfaces. PHYSICAL REVIEW. B, CONDENSED MATTER 1996;54:13759-13766. [PMID: 9985293 DOI: 10.1103/physrevb.54.13759] [Citation(s) in RCA: 20] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
12
Ku JH, Nemanich RJ. Surface electronic structure of clean and hydrogen-chemisorbed SixGe1-x alloy surfaces. PHYSICAL REVIEW. B, CONDENSED MATTER 1996;54:14102-14110. [PMID: 9985333 DOI: 10.1103/physrevb.54.14102] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
13
Pflanz S, Buchtler R, Moritz W, Over H. Dimer bond geometry in D/Ge(100)-(2 x 1): A low-energy electron-diffraction structure analysis. PHYSICAL REVIEW. B, CONDENSED MATTER 1996;54:R8313-R8316. [PMID: 9984583 DOI: 10.1103/physrevb.54.r8313] [Citation(s) in RCA: 4] [Impact Index Per Article: 0.1] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
14
Lewis LB, Segall J, Janda KC. Recombinative desorption of hydrogen from the Ge(100)–(2×1) surface: A laser‐induced desorption study. J Chem Phys 1995. [DOI: 10.1063/1.469117] [Citation(s) in RCA: 37] [Impact Index Per Article: 1.3] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/14/2022]  Open
15
D’Evelyn MP, Yang YL, Cohen SM. Adsorption, desorption, and decomposition of HCl and HBr on Ge(100): Competitive pairing and near‐first‐order desorption kinetics. J Chem Phys 1994. [DOI: 10.1063/1.467686] [Citation(s) in RCA: 23] [Impact Index Per Article: 0.8] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/14/2022]  Open
16
Landemark E, Karlsson CJ, Johansson LS, Uhrberg RI. Electronic structure of clean and hydrogen-chemisorbed Ge(001) surfaces studied by photoelectron spectroscopy. PHYSICAL REVIEW. B, CONDENSED MATTER 1994;49:16523-16533. [PMID: 10010805 DOI: 10.1103/physrevb.49.16523] [Citation(s) in RCA: 34] [Impact Index Per Article: 1.1] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
17
Lu G, Crowell JE. The adsorption and thermal decomposition of digermane on Ge(111). J Chem Phys 1993. [DOI: 10.1063/1.464060] [Citation(s) in RCA: 33] [Impact Index Per Article: 1.1] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/14/2022]  Open
18
D’Evelyn MP, Cohen SM, Rouchouze E, Yang YL. Surface π bonding and the near‐first‐order desorption kinetics of hydrogen from Ge(100)2×1. J Chem Phys 1993. [DOI: 10.1063/1.464078] [Citation(s) in RCA: 47] [Impact Index Per Article: 1.5] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/14/2022]  Open
19
Cho J, Nemanich RJ. Surface electronic states of low-temperature H-plasma-exposed Ge(100). PHYSICAL REVIEW. B, CONDENSED MATTER 1992;46:12421-12426. [PMID: 10003158 DOI: 10.1103/physrevb.46.12421] [Citation(s) in RCA: 7] [Impact Index Per Article: 0.2] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
20
Papagno L, Caputi LS, Anderson J, Lapeyre GJ. Comparative study of water adsorption on Ge(100)-(2 x 1) and GexSi1-x(100)-(2 x 1) by high-resolution electron-energy-loss spectroscopy. PHYSICAL REVIEW. B, CONDENSED MATTER 1989;40:8443-8445. [PMID: 9991308 DOI: 10.1103/physrevb.40.8443] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.1] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
21
Leung KT, Terminello LJ, Hussain Z, Zhang XS, Hayashi T, Shirley DA. Surface-bonding geometry of (2 x 1)S/Ge(001) by the normal-emission angle-resolved photoemission extended-fine-structure technique. PHYSICAL REVIEW. B, CONDENSED MATTER 1988;38:8241-8248. [PMID: 9945577 DOI: 10.1103/physrevb.38.8241] [Citation(s) in RCA: 21] [Impact Index Per Article: 0.6] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/11/2023]
22
Kaxiras E, Joannopoulos JD. Hydrogenation of semiconductor surfaces: Si and Ge (111). PHYSICAL REVIEW. B, CONDENSED MATTER 1988;37:8842-8848. [PMID: 9944251 DOI: 10.1103/physrevb.37.8842] [Citation(s) in RCA: 35] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/11/2023]
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