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For: Keinonen J, Hautala M, Rauhala E, Erola M. Hydrogen-implantation-induced damage in silicon. Phys Rev B Condens Matter 1987;36:1344-1347. [PMID: 9942960 DOI: 10.1103/physrevb.36.1344] [Citation(s) in RCA: 18] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [What about the content of this article? (0)] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/11/2023]
Number Cited by Other Article(s)
1
Brusa RS, Zecca A, Nobili C, Ottaviani G, Tonini R, Dupasquier A. Vacancy-hydrogen interaction in H-implanted Si studied by positron annihilation. PHYSICAL REVIEW. B, CONDENSED MATTER 1994;49:7271-7280. [PMID: 10009465 DOI: 10.1103/physrevb.49.7271] [Citation(s) in RCA: 12] [Impact Index Per Article: 0.4] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
2
Hayashi N, Suzuki R, Hasegawa M, Kobayashi N, Tanigawa S, Mikado T. Ion-beam-induced recrystallization in Si(100) studied with slow positron annihilation and Rutherford backscattering and channeling. PHYSICAL REVIEW LETTERS 1993;70:45-48. [PMID: 10053254 DOI: 10.1103/physrevlett.70.45] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.1] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/23/2023]
3
Mäkinen S, Rajainmäki H, Linderoth S. Hydrogen- and helium-implanted silicon: Low-temperature positron-lifetime studies. PHYSICAL REVIEW. B, CONDENSED MATTER 1991;44:5510-5517. [PMID: 9998386 DOI: 10.1103/physrevb.44.5510] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
4
Nielsen B, Lynn KG, Welch DO, Leung TC, Rubloff GW. Microvoids at the SiO2/Si interface. PHYSICAL REVIEW. B, CONDENSED MATTER 1989;40:1434-1437. [PMID: 9991995 DOI: 10.1103/physrevb.40.1434] [Citation(s) in RCA: 12] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
5
Schultz PJ, Tandberg E, Lynn KG, Nielsen B, Jackman TE, Denhoff MW, Aers GC. Defects and impurities at the Si/Si(100) interface studied with monoenergetic positrons. PHYSICAL REVIEW LETTERS 1988;61:187-190. [PMID: 10039055 DOI: 10.1103/physrevlett.61.187] [Citation(s) in RCA: 19] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/23/2023]
6
Lahtinen J, Vehanen A, Punkka E, Hautojärvi P, Keinonen J, Hautala M, Rauhala E, Karttunen V, Kuronen A, Räisänen J. Damage production in hydrogen-implanted silicon. SURF INTERFACE ANAL 1988. [DOI: 10.1002/sia.740120513] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/06/2022]
7
Keinonen J, Hautala M, Rauhala E, Karttunen V, Kuronen A, Räisänen J, Lahtinen J, Vehanen A, Punkka E, Hautojärvi P. Defect formation in H implantation of crystalline Si. PHYSICAL REVIEW. B, CONDENSED MATTER 1988;37:8269-8277. [PMID: 9944162 DOI: 10.1103/physrevb.37.8269] [Citation(s) in RCA: 37] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/11/2023]
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