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Firszt F, Męczyńska H, Łęgowski S, Zakrzewski J, Strzałkowski K, Wróbel M. Persistent photoconductivity and optically stimulated luminescence in Zn0.8
Mg0.2
Se mixed crystals. ACTA ACUST UNITED AC 2004. [DOI: 10.1002/pssc.200304135] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.1] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/05/2022]
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Onopko DE, Ryskin AI. Chemical bonding and structure of metastable impurity centers in semiconductor crystals. J STRUCT CHEM+ 2000. [DOI: 10.1007/bf02683931] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 10/23/2022]
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Carey DD, Stoddart ST, Bending SJ, Harris JJ, Foxon CT. Investigation of deep metastable traps in Si delta -doped GaAs/Al0.33Ga0.67As quantum-well samples using noise spectroscopy. PHYSICAL REVIEW. B, CONDENSED MATTER 1996; 54:2813-2821. [PMID: 9986135 DOI: 10.1103/physrevb.54.2813] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.1] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
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Baraldi A, Frigeri P, Ghezzi C, Parisini A, Bosacchi A, Franchi S, Gombia E, Mosca R. Coexistence of the DX center with nonmetastable states of the donor impurity in Si-doped AlxGa1-xAs: Effects on the low-temperature electron mobility. PHYSICAL REVIEW. B, CONDENSED MATTER 1996; 53:10715-10727. [PMID: 9982638 DOI: 10.1103/physrevb.53.10715] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
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Mäkinen J, Laine T, Partanen J, Saarinen K, Hautojärvi P, Tappura K, Hakkarainen T, Asonen H, Pessa M, Kauppinen JP, Vänttinen K, Paalanen MA, Likonen J. Donor levels and the microscopic structure of the DX center in n-type Si-doped AlxGa0.51-xIn0.49P grown by molecular-beam epitaxy. PHYSICAL REVIEW. B, CONDENSED MATTER 1996; 53:7851-7862. [PMID: 9982235 DOI: 10.1103/physrevb.53.7851] [Citation(s) in RCA: 6] [Impact Index Per Article: 0.2] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
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Mäkinen J, Laine T, Saarinen K, Hautojärvi P, Corbel C, Airaksinen VM, Nagle J. Microscopic structure of the DX center in Si-doped AlxGa1-xAs: Observation of a vacancy by positron-annihilation spectroscopy. PHYSICAL REVIEW. B, CONDENSED MATTER 1995; 52:4870-4883. [PMID: 9981671 DOI: 10.1103/physrevb.52.4870] [Citation(s) in RCA: 4] [Impact Index Per Article: 0.1] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
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Zeman J, Zigone M, Martinez G. Optical investigation of the DX centers in GaAs under hydrostatic pressure. PHYSICAL REVIEW. B, CONDENSED MATTER 1995; 51:17551-17560. [PMID: 9978780 DOI: 10.1103/physrevb.51.17551] [Citation(s) in RCA: 5] [Impact Index Per Article: 0.2] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 11/07/2022]
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Baraldi A, Colonna F, Frigeri P, Ghezzi C, Parisini A, Gombia E, Mosca R. Low-temperature occupation of a donor state resonant with the conduction band in Al0.35Ga0.65As. PHYSICAL REVIEW. B, CONDENSED MATTER 1993; 48:17835-17840. [PMID: 10008414 DOI: 10.1103/physrevb.48.17835] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.0] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
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Cheong BH, Chang KJ. First-principles study of the atomic structure and local vibrational modes of the DX center in GaAs under pressure. PHYSICAL REVIEW. B, CONDENSED MATTER 1992; 46:13131-13135. [PMID: 10003352 DOI: 10.1103/physrevb.46.13131] [Citation(s) in RCA: 5] [Impact Index Per Article: 0.2] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
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Chadi DJ. Tetrahedrally symmetric DX-like states of substitutional donors in GaAs and AlxGa1-xAs alloys. PHYSICAL REVIEW. B, CONDENSED MATTER 1992; 46:6777-6780. [PMID: 10002379 DOI: 10.1103/physrevb.46.6777] [Citation(s) in RCA: 16] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
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Fletcher R, Zaremba E, D'Iorio M, Foxon CT, Harris JJ. Persistent photoconductivity and two-band effects in GaAs/AlxGa1-xAs heterojunctions. PHYSICAL REVIEW. B, CONDENSED MATTER 1990; 41:10649-10666. [PMID: 9993474 DOI: 10.1103/physrevb.41.10649] [Citation(s) in RCA: 52] [Impact Index Per Article: 1.5] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
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Zazoui M, Feng SL, Bourgoin JC. Energy level associated with the DX center in Ga1-xAlxAs. PHYSICAL REVIEW. B, CONDENSED MATTER 1990; 41:8485-8492. [PMID: 9993174 DOI: 10.1103/physrevb.41.8485] [Citation(s) in RCA: 9] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
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Lin JY, Jiang HX. Relaxation of stored charge carriers in a Zn0.3Cd0.7Se mixed crystal. PHYSICAL REVIEW. B, CONDENSED MATTER 1990; 41:5178-5187. [PMID: 9994377 DOI: 10.1103/physrevb.41.5178] [Citation(s) in RCA: 12] [Impact Index Per Article: 0.4] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
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Dmochowski JE, Dobaczewski L, Langer JM, Jantsch W. Electron trapping by metastable effective-mass states of DX donors in indirect-band-gap AlxGa1-xAs:Te. PHYSICAL REVIEW. B, CONDENSED MATTER 1989; 40:9671-9682. [PMID: 9991487 DOI: 10.1103/physrevb.40.9671] [Citation(s) in RCA: 20] [Impact Index Per Article: 0.6] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
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Glaser E, Kennedy TA, Sillmon RS, Spencer MG. Symmetry of the Si shallow donor state in AlAs/GaAs and AlxGa1-xAs/GaAs heterostructures. PHYSICAL REVIEW. B, CONDENSED MATTER 1989; 40:3447-3450. [PMID: 9992305 DOI: 10.1103/physrevb.40.3447] [Citation(s) in RCA: 11] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
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Chadi DJ, Chang KJ. Energetics of DX-center formation in GaAs and AlxGa1-xAs alloys. PHYSICAL REVIEW. B, CONDENSED MATTER 1989; 39:10063-10074. [PMID: 9947784 DOI: 10.1103/physrevb.39.10063] [Citation(s) in RCA: 175] [Impact Index Per Article: 5.0] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
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Mooney PM, Wilkening W, Kaufmann U, Kuech TF. Electron-paramagnetic-resonance measurements of Si-donor-related levels in AlxGa1-xAs. PHYSICAL REVIEW. B, CONDENSED MATTER 1989; 39:5554-5557. [PMID: 9948961 DOI: 10.1103/physrevb.39.5554] [Citation(s) in RCA: 21] [Impact Index Per Article: 0.6] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
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Gibart P, Williamson DL, Basmaji P. 119Sn Mössbauer study of shallow and deep states of Sn in Ga1-xAlxAs. PHYSICAL REVIEW. B, CONDENSED MATTER 1988; 38:1885-1892. [PMID: 9946474 DOI: 10.1103/physrevb.38.1885] [Citation(s) in RCA: 11] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
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