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A comparative screening of the catalytic activity of nanocrystalline MIIZr4(PO4)6 ceramics in the one-pot synthesis of 1,6-diamino-4-aryl-2-oxo-1,2-dihydropyridine-3,5-dicarbonitrile derivatives. RESEARCH ON CHEMICAL INTERMEDIATES 2016. [DOI: 10.1007/s11164-016-2608-6] [Citation(s) in RCA: 6] [Impact Index Per Article: 0.8] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 10/21/2022]
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Li YZ, Patrin JC, Chen Y, Weaver JH. Mg ordering, reaction, and crystallite formation on GaAs(110): Scanning tunneling microscopy and photoemission studies. PHYSICAL REVIEW. B, CONDENSED MATTER 1991; 44:8843-8849. [PMID: 9998842 DOI: 10.1103/physrevb.44.8843] [Citation(s) in RCA: 4] [Impact Index Per Article: 0.1] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
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Aldao CM, Vitomirov IM, Waddill GD, Weaver JH. Effects of growth temperature on atom distributions, Fermi-level positions, and valence-band offsets for Ge/n-type InP(110) heterojunctions. PHYSICAL REVIEW. B, CONDENSED MATTER 1991; 43:13952-13956. [PMID: 9997262 DOI: 10.1103/physrevb.43.13952] [Citation(s) in RCA: 4] [Impact Index Per Article: 0.1] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
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Aldao CM, Aastuen DJ, Vos M, Vitomirov IM, Waddill GD, Benning PJ, Weaver JH. Interface formation with ions and neutral atoms. PHYSICAL REVIEW. B, CONDENSED MATTER 1990; 42:2878-2885. [PMID: 9995777 DOI: 10.1103/physrevb.42.2878] [Citation(s) in RCA: 4] [Impact Index Per Article: 0.1] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 11/07/2022]
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Duò L, Sancrotti M, Cosso R, D'Addato S, Ruocco A, Nannarone S, Norman D, Weightman P. Strong chemical reactivity at the early stages of Yb overgrowth on GaP(110): A synchrotron-radiation study. PHYSICAL REVIEW. B, CONDENSED MATTER 1990; 42:3478-3484. [PMID: 9995862 DOI: 10.1103/physrevb.42.3478] [Citation(s) in RCA: 7] [Impact Index Per Article: 0.2] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
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Vitomirov IM, Aldao CM, Waddill GD, Capasso C, Weaver JH. Metal-InP(110) interface properties: Temperature, dopant-concentration, and cluster-deposition dependencies. PHYSICAL REVIEW. B, CONDENSED MATTER 1990; 41:8465-8476. [PMID: 9993172 DOI: 10.1103/physrevb.41.8465] [Citation(s) in RCA: 10] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
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Waddill GD, Aldao CM, Capasso C, Benning PJ, Hu Y, Wagener TJ, Jost MB, Weaver JH. Thermally reversible band bending for Bi/GaAs(110): Photoemission and inverse-photoemission investigations. PHYSICAL REVIEW. B, CONDENSED MATTER 1990; 41:5960-5968. [PMID: 9994480 DOI: 10.1103/physrevb.41.5960] [Citation(s) in RCA: 11] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
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Trafas BM, Aldao CM, Capasso C, Shapira Y, Boscherini F, Vitomirov IM, Weaver JH. Development of rare-earth-semiconductor interfaces: Ce/InP(110), Sm/InSb(110), and Ce/CdTe(110). PHYSICAL REVIEW. B, CONDENSED MATTER 1989; 40:9811-9817. [PMID: 9991503 DOI: 10.1103/physrevb.40.9811] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.1] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
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Anderson SG, Aldao CM, Waddill GD, Vitomirov IM, Severtson SJ, Weaver JH. Temperature-dependent Al/GaAs(110) interface formation and adatom energy references. PHYSICAL REVIEW. B, CONDENSED MATTER 1989; 40:8305-8312. [PMID: 9991288 DOI: 10.1103/physrevb.40.8305] [Citation(s) in RCA: 5] [Impact Index Per Article: 0.1] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
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Aldao CM, Waddill GD, Anderson SG, Weaver JH. Temperature effects for Ti/GaAs(110) interface formation involving cluster and atom deposition. PHYSICAL REVIEW. B, CONDENSED MATTER 1989; 40:2932-2939. [PMID: 9992223 DOI: 10.1103/physrevb.40.2932] [Citation(s) in RCA: 10] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
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Aldao CM, Vitomirov IM, Xu F, Weaver JH. Disruption, atom distributions, and energy levels for Ge/GaAs(110), Ge/InP(110), and Ge/InSb(110) heterojunctions. PHYSICAL REVIEW. B, CONDENSED MATTER 1989; 40:3711-3719. [PMID: 9992341 DOI: 10.1103/physrevb.40.3711] [Citation(s) in RCA: 5] [Impact Index Per Article: 0.1] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
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Trafas BM, Xu F, Vos M, Aldao CM, Weaver JH. Metal/GaP(110) interface formation: Ti, Pd, Ag, and Au adatom deposition. PHYSICAL REVIEW. B, CONDENSED MATTER 1989; 40:4022-4029. [PMID: 9992376 DOI: 10.1103/physrevb.40.4022] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.1] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
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Chassé T, Wilke WG, Horn K. Chemical reactions and temperature-dependent interface formation of Ti/InP (110). SURF INTERFACE ANAL 1989. [DOI: 10.1002/sia.740140608] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.1] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/06/2022]
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Waddill GD, Vitomirov IM, Aldao CM, Weaver JH. Cluster deposition on GaAs(110): Formation of abrupt, defect-free interfaces. PHYSICAL REVIEW LETTERS 1989; 62:1568-1571. [PMID: 10039707 DOI: 10.1103/physrevlett.62.1568] [Citation(s) in RCA: 21] [Impact Index Per Article: 0.6] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/23/2023]
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Vos M, Anderson SG, Weaver JH. Inelastic mean free paths for electrons at disordered interfaces. PHYSICAL REVIEW. B, CONDENSED MATTER 1989; 39:3274-3278. [PMID: 9948629 DOI: 10.1103/physrevb.39.3274] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
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Trafas BM, Vitomirov IM, Aldao CM, Gao Y, Xu F, Weaver JH, Partin DL. Cr, Co, Pd, Au, and In overlayers on PbS(100): Adatom interactions and interface formation. PHYSICAL REVIEW. B, CONDENSED MATTER 1989; 39:3265-3273. [PMID: 9948628 DOI: 10.1103/physrevb.39.3265] [Citation(s) in RCA: 4] [Impact Index Per Article: 0.1] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
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Vitomirov IM, Aldao CM, Lin Z, Gao Y, Trafas BM, Weaver JH. Pd overlayer growth on InP(110), GaAs(110), and InSb(110): Comparisons of anion surface segregation. PHYSICAL REVIEW. B, CONDENSED MATTER 1988; 38:10776-10786. [PMID: 9945933 DOI: 10.1103/physrevb.38.10776] [Citation(s) in RCA: 4] [Impact Index Per Article: 0.1] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/11/2023]
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Hill DM, Xu F, Lin Z, Weaver JH. Atomic distributions across metal-III-V-compound-semiconductor interfaces. PHYSICAL REVIEW. B, CONDENSED MATTER 1988; 38:1893-1900. [PMID: 9946475 DOI: 10.1103/physrevb.38.1893] [Citation(s) in RCA: 12] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
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