Amplification of a new surface plasma mode in the type-I semiconductor superlattice

Observation of terahertz plasmon and plasmon-polariton splitting in a grating-coupled AlGaN/GaN heterostructure

Plasmon in two-dimensional electron gas (2DEG) has long been considered as a promising active medium for terahertz emitters and detectors. However, the efficiency of terahertz plasmonic devices is severely limited by the high damping rate of plasma wave in solid state. In addition to the enhancement of plasmon lifetime by using 2DEGs with higher carrier mobility, engineering on the boundary condition and electromagnetic environment of plasmon cavity helps to preserve the plasmon states. Here we report on terahertz reflection spectroscopy of plasmon states in a grating-coupled AlGaN/GaN-2DEG plasmonic device at 7 K in equilibrium with ambient blackbody irradiation. Localized plasmon states and plasmon-polariton states were observed when the core plasmonic device is integrated with a silicon lens and when it is embedded in a terahertz Fabry-Pérot cavity, respectively. Simulation results including the reflection spectra and total reflection power agree well with the measured results. The Rabi splitting is found to be inversely proportional to the resonance frequency, and follows a linear relation with the square root of the sheet electron density. A normalized coupling ratio, Ω_Rω₀≈0.13, is achieved between the Rabi splitting Ω_R and the resonance frequency ω₀. The coupling ratio could be further increased to allow for ultrastrong coupling between terahertz photons and plasmons.