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Berchenko NN, Medvedev YV. The chemistry of the compound semiconductor-intrinsic insulator interface. RUSSIAN CHEMICAL REVIEWS 2007. [DOI: 10.1070/rc1994v063n08abeh000108] [Citation(s) in RCA: 15] [Impact Index Per Article: 0.9] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 11/08/2022]
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Lobo A, Borchert H, Talapin D, Weller H, Möller T. Surface oxidation of CdTe nanocrystals—A high resolution core-level photoelectron spectroscopy study. Colloids Surf A Physicochem Eng Asp 2006. [DOI: 10.1016/j.colsurfa.2005.11.068] [Citation(s) in RCA: 29] [Impact Index Per Article: 1.6] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/15/2022]
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XPS analysis of wet chemical etching of GaAs(110) by Br2–H2O: comparison of emersion and model experiments. Electrochim Acta 2000. [DOI: 10.1016/s0013-4686(00)00618-6] [Citation(s) in RCA: 26] [Impact Index Per Article: 1.1] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/20/2022]
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Beerbom M, Mayer T, Jaegermann W. Synchrotron-Induced Photoemission of Emersed GaAs Electrodes after Electrochemical Etching in Br2/H2O Solutions. J Phys Chem B 2000. [DOI: 10.1021/jp0011342] [Citation(s) in RCA: 30] [Impact Index Per Article: 1.3] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 01/21/2023]
Affiliation(s)
- M. Beerbom
- Department of Material Science, Darmstadt University of Technology, Petersenstrasse 23, D-64287 Darmstadt, Germany
| | - Th. Mayer
- Department of Material Science, Darmstadt University of Technology, Petersenstrasse 23, D-64287 Darmstadt, Germany
| | - W. Jaegermann
- Department of Material Science, Darmstadt University of Technology, Petersenstrasse 23, D-64287 Darmstadt, Germany
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Lee DH, Chung J, Oh S. X-ray photoelectron-diffraction analysis of oxygen chemisorption on the GaAs(110) surface. PHYSICAL REVIEW. B, CONDENSED MATTER 1996; 53:13038-13046. [PMID: 9982982 DOI: 10.1103/physrevb.53.13038] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.0] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
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Hollinger G, Skheyta-Kabbani R, Gendry M. Oxides on GaAs and InAs surfaces: An x-ray-photoelectron-spectroscopy study of reference compounds and thin oxide layers. PHYSICAL REVIEW. B, CONDENSED MATTER 1994; 49:11159-11167. [PMID: 10009965 DOI: 10.1103/physrevb.49.11159] [Citation(s) in RCA: 70] [Impact Index Per Article: 2.3] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
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Spindt CJ, Yamada M, Meissner PL, Miyano KE, Kendelewicz T, Herrera-Gomez A, Spicer WE, Arko AJ. Electronic structure and Schottky-barrier formation on GaAs (100) surfaces prepared by thermal desorption of a protective arsenic coating. PHYSICAL REVIEW. B, CONDENSED MATTER 1992; 45:11108-11119. [PMID: 10001031 DOI: 10.1103/physrevb.45.11108] [Citation(s) in RCA: 14] [Impact Index Per Article: 0.4] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
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Chen Y, Seo JM, Anderson SG, Weaver JH. Photoinduced oxidation of InP(110) with condensed O2 at 25 K. PHYSICAL REVIEW. B, CONDENSED MATTER 1991; 44:1699-1706. [PMID: 9999703 DOI: 10.1103/physrevb.44.1699] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.1] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
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Anderson SG, Chen Y, Seo JM, Weaver JH. InP(110) oxidation with O2, NO, and N2O at 20 K: Temperature and photon-energy dependencies. PHYSICAL REVIEW. B, CONDENSED MATTER 1991; 43:9621-9625. [PMID: 9996659 DOI: 10.1103/physrevb.43.9621] [Citation(s) in RCA: 4] [Impact Index Per Article: 0.1] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
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Selci S, Cricenti A, Felici AC, Ferrari L, Goletti C, Chiarotti G. Oxygen chemisorption on cleaved InP(110) surfaces studied with surface differential reflectivity. PHYSICAL REVIEW. B, CONDENSED MATTER 1991; 43:6757-6759. [PMID: 9998123 DOI: 10.1103/physrevb.43.6757] [Citation(s) in RCA: 8] [Impact Index Per Article: 0.2] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
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Seo JM, Li YZ, Anderson SG, Aastuen DJ, Ayyala US, Kroll GH, Weaver JH. X-ray-induced low-temperature oxidation: N2O/GaAs(110). PHYSICAL REVIEW. B, CONDENSED MATTER 1990; 42:9080-9087. [PMID: 9995123 DOI: 10.1103/physrevb.42.9080] [Citation(s) in RCA: 6] [Impact Index Per Article: 0.2] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
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Anderson SG, Komeda T, Seo JM, Capasso C, Waddill GD, Benning PJ, Weaver JH. O2/GaAs(110) interface formation at 20 K: Photon-induced reaction and desorption. PHYSICAL REVIEW. B, CONDENSED MATTER 1990; 42:5082-5092. [PMID: 9996068 DOI: 10.1103/physrevb.42.5082] [Citation(s) in RCA: 12] [Impact Index Per Article: 0.4] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
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Seo JM, Anderson SG, Komeda T, Capasso C, Weaver JH. Dynamic photoinduced low-temperature oxidation of GaAs(110). PHYSICAL REVIEW. B, CONDENSED MATTER 1990; 41:5455-5458. [PMID: 9994422 DOI: 10.1103/physrevb.41.5455] [Citation(s) in RCA: 6] [Impact Index Per Article: 0.2] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
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González ML, Alonso M, Soria F. Structural characterization of III-V semiconductor surfaces by quantitative aes. SURF INTERFACE ANAL 1989. [DOI: 10.1002/sia.740140611] [Citation(s) in RCA: 4] [Impact Index Per Article: 0.1] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/09/2022]
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