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Jiang M, Xiao HY, Peng SM, Qiao L, Yang GX, Liu ZJ, Zu XT. Effects of stacking periodicity on the electronic and optical properties of GaAs/AlAs superlattice: a first-principles study. Sci Rep 2020; 10:4862. [PMID: 32184414 PMCID: PMC7078191 DOI: 10.1038/s41598-020-61509-x] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.8] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 08/20/2019] [Accepted: 02/24/2020] [Indexed: 11/09/2022] Open
Abstract
The effects of stacking periodicity on the electronic and optical properties of GaAs/AlAs superlattice have been explored by density functional theory calculations. Among the (GaAs)m/(AlAs)m, (GaAs)1/(AlAs)m and (GaAs)m/(AlAs)1 (m = 1 to 5) superlattices, the band gaps of (GaAs)m/(AlAs)1 superlattices decrease significantly as the layer of GaAs increases, and the cut-off wavelengths are found to locate in the near infrared region. For (GaAs)m/(AlAs)1 SLs, the conduction bands shift toward Fermi level, resulting in the smaller band gap, while conduction bands of (GaAs)1/(AlAs)n SLs slightly shift to higher energy, which lead to comparable band gaps. The layer number of GaAs shows negligible effects on the reflectivity spectra of superlattice structures, while the absorption coefficient shows a red-shift with the increasing layer of GaAs, which is beneficial for the application of GaAs/AlAs superlattice in the field of near infrared detector. These results demonstrate that controlling the number of GaAs layers is a good method to engineer the optoelectronic properties of GaAs/AlAs superlattice.
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Affiliation(s)
- M Jiang
- School of Physics, University of Electronic Science and Technology of China, Chengdu, 610054, China
| | - H Y Xiao
- School of Physics, University of Electronic Science and Technology of China, Chengdu, 610054, China.
| | - S M Peng
- Institute of Nuclear Physics and Chemistry, Chinese Academy of Engineering Physics, Mianyang, 621900, China
| | - L Qiao
- School of Physics, University of Electronic Science and Technology of China, Chengdu, 610054, China
| | - G X Yang
- Institute of Nuclear Physics and Chemistry, Chinese Academy of Engineering Physics, Mianyang, 621900, China
| | - Z J Liu
- Department of Physics, Lanzhou City University, Lanzhou, 730070, China.
| | - X T Zu
- School of Physics, University of Electronic Science and Technology of China, Chengdu, 610054, China
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Anikeeva M, Albrecht M, Mahler F, Tomm JW, Lymperakis L, Chèze C, Calarco R, Neugebauer J, Schulz T. Role of hole confinement in the recombination properties of InGaN quantum structures. Sci Rep 2019; 9:9047. [PMID: 31227738 PMCID: PMC6588636 DOI: 10.1038/s41598-019-45218-8] [Citation(s) in RCA: 6] [Impact Index Per Article: 1.2] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 03/06/2019] [Accepted: 05/21/2019] [Indexed: 11/16/2022] Open
Abstract
We study the isolated contribution of hole localization for well-known charge carrier recombination properties observed in conventional, polar InGaN quantum wells (QWs). This involves the interplay of charge carrier localization and non-radiative transitions, a non-exponential decay of the emission and a specific temperature dependence of the emission, denoted as “s-shape”. We investigate two dimensional In0.25Ga0.75N QWs of single monolayer (ML) thickness, stacked in a superlattice with GaN barriers of 6, 12, 25 and 50 MLs. Our results are based on scanning and high-resolution transmission electron microscopy (STEM and HR-TEM), continuous-wave (CW) and time-resolved photoluminescence (TRPL) measurements as well as density functional theory (DFT) calculations. We show that the recombination processes in our structures are not affected by polarization fields and electron localization. Nevertheless, we observe all the aforementioned recombination properties typically found in standard polar InGaN quantum wells. Via decreasing the GaN barrier width to 6 MLs and below, the localization of holes in our QWs is strongly reduced. This enhances the influence of non-radiative recombination, resulting in a decreased lifetime of the emission, a weaker spectral dependence of the decay time and a reduced s-shape of the emission peak. These findings suggest that single exponential decay observed in non-polar QWs might be related to an increasing influence of non-radiative transitions.
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Affiliation(s)
- M Anikeeva
- Leibniz-Institut für Kristallzüchtung, Berlin, Germany.
| | - M Albrecht
- Leibniz-Institut für Kristallzüchtung, Berlin, Germany
| | - F Mahler
- Max Born Institute for Nonlinear Optics and Short Pulse Spectroscopy, Berlin, Germany
| | - J W Tomm
- Max Born Institute for Nonlinear Optics and Short Pulse Spectroscopy, Berlin, Germany
| | - L Lymperakis
- Max-Planck-Institut für Eisenforschung GmbH, Düsseldorf, Germany
| | - C Chèze
- Paul-Drude-Institute of Solid-State Electronics, Berlin, Germany
| | - R Calarco
- Paul-Drude-Institute of Solid-State Electronics, Berlin, Germany
| | - J Neugebauer
- Max-Planck-Institut für Eisenforschung GmbH, Düsseldorf, Germany
| | - T Schulz
- Leibniz-Institut für Kristallzüchtung, Berlin, Germany
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Tan W, Inkson JC, Srivastava GP. Microscopic calculation of valence-band states in semiconductor structures in the presence of a magnetic field. PHYSICAL REVIEW. B, CONDENSED MATTER 1996; 54:14623-14632. [PMID: 9985470 DOI: 10.1103/physrevb.54.14623] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.1] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
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Zhang YA, Strozier JA, Ignatiev A. Low-temperature photoluminescence of disordered thin-layer GaAs/AlAs superlattices: Experiment. PHYSICAL REVIEW. B, CONDENSED MATTER 1996; 53:7426-7433. [PMID: 9982191 DOI: 10.1103/physrevb.53.7426] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.1] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
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Deveaud B, Clérot F, Regreny A, Planel R, Gérard JM. Femtosecond-luminescence study of electron transfer in type-II GaAs/AlAs superlattices: Intervalley scattering versus state mixing. PHYSICAL REVIEW. B, CONDENSED MATTER 1994; 49:13560-13563. [PMID: 10010292 DOI: 10.1103/physrevb.49.13560] [Citation(s) in RCA: 12] [Impact Index Per Article: 0.4] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
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Agulló-Rueda F, Grahn HT, Ploog K. Nonthermal occupation of Gamma and X states in GaAs/AlAs superlattices. PHYSICAL REVIEW. B, CONDENSED MATTER 1994; 49:14456-14459. [PMID: 10010528 DOI: 10.1103/physrevb.49.14456] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.1] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 11/07/2022]
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Voliotis V, Grousson R, Lavallard P, Ivchenko EL, Kiselev AA, Planel R. Absorption coefficient in type-II GaAs/AlAs short-period superlattices. PHYSICAL REVIEW. B, CONDENSED MATTER 1994; 49:2576-2584. [PMID: 10011089 DOI: 10.1103/physrevb.49.2576] [Citation(s) in RCA: 11] [Impact Index Per Article: 0.4] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
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Yu RH. Self-consistent determination of electronic structure and elementary excitations of finite modulation-doped superlattices. PHYSICAL REVIEW. B, CONDENSED MATTER 1993; 47:15692-15699. [PMID: 10005963 DOI: 10.1103/physrevb.47.15692] [Citation(s) in RCA: 4] [Impact Index Per Article: 0.1] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
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Cen J, Bajaj KK. Transition energy between the 1s and 2p+/- magnetoexciton states in type-II quantum-well structures. PHYSICAL REVIEW. B, CONDENSED MATTER 1993; 47:1392-1396. [PMID: 10006150 DOI: 10.1103/physrevb.47.1392] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.1] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
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Wang D. Effects of Gamma -X mixing on the binding energy of a shallow donor in an AlAs/GaAs quantum well. PHYSICAL REVIEW. B, CONDENSED MATTER 1992; 46:7304-7307. [PMID: 10002459 DOI: 10.1103/physrevb.46.7304] [Citation(s) in RCA: 11] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
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Samson B, Dumelow T, Hamilton AA, Parker TJ, Smith SR, Tilley DR, Foxon CT, Hilton D, Moore KJ. Effects of interface broadening on far-infrared and Raman spectra of GaAs/AlAs superlattices. PHYSICAL REVIEW. B, CONDENSED MATTER 1992; 46:2375-2392. [PMID: 10003912 DOI: 10.1103/physrevb.46.2375] [Citation(s) in RCA: 23] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
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Ge W, Schmidt WD, Sturge MD, Pfeiffer LN, West KW. Conduction-band minimum of (GaAs)1/(AlAs)1 superlattices: Relationship to X minimum of AlAs. PHYSICAL REVIEW. B, CONDENSED MATTER 1991; 44:3432-3435. [PMID: 9999961 DOI: 10.1103/physrevb.44.3432] [Citation(s) in RCA: 5] [Impact Index Per Article: 0.2] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
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Binder R, Galbraith I, Koch SW. Theory of band-edge optical nonlinearities in type-I and type-II quantum-well structures. PHYSICAL REVIEW. B, CONDENSED MATTER 1991; 44:3031-3042. [PMID: 9999895 DOI: 10.1103/physrevb.44.3031] [Citation(s) in RCA: 18] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
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Gil B, Lefebvre P, Boring P, Moore KJ, Duggan G, Woodbridge K. Valence-band coupling in thin (Ga,In)As-AlAs strained quantum wells. PHYSICAL REVIEW. B, CONDENSED MATTER 1991; 44:1942-1945. [PMID: 9999739 DOI: 10.1103/physrevb.44.1942] [Citation(s) in RCA: 13] [Impact Index Per Article: 0.4] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
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Spain IL, Skolnick MS, Smith GW, Saker MK, Whitehouse CR. Photoluminescence spectroscopy in GaAs/AlAs superlattices as a function of temperature and pressure: The influence of sample quality. PHYSICAL REVIEW. B, CONDENSED MATTER 1991; 43:14091-14098. [PMID: 9997278 DOI: 10.1103/physrevb.43.14091] [Citation(s) in RCA: 7] [Impact Index Per Article: 0.2] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
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Kalt H, Rühle WW, Reimann K, Rinker M, Bauser E. Alloy-disorder-induced intervalley coupling. PHYSICAL REVIEW. B, CONDENSED MATTER 1991; 43:12364-12373. [PMID: 9997033 DOI: 10.1103/physrevb.43.12364] [Citation(s) in RCA: 9] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
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Matsuoka T, Nakazawa T, Ohya T, Taniguchi K, Hamaguchi C, Kato H, Watanabe Y. Zone-folding effect in short-period (GaAs)n/(AlAs)n superlattices with n in the range 3-15. PHYSICAL REVIEW. B, CONDENSED MATTER 1991; 43:11798-11805. [PMID: 9996952 DOI: 10.1103/physrevb.43.11798] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
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Dandrea RG, Zunger A. First-principles study of intervalley mixing: Ultrathin GaAs/GaP superlattices. PHYSICAL REVIEW. B, CONDENSED MATTER 1991; 43:8962-8989. [PMID: 9996566 DOI: 10.1103/physrevb.43.8962] [Citation(s) in RCA: 19] [Impact Index Per Article: 0.6] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
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Feldmann J, Sacher J, Göbel E. Mode locking using a type II multiple-quantum-well structure as a fast saturable absorber. OPTICS LETTERS 1991; 16:241-243. [PMID: 19773895 DOI: 10.1364/ol.16.000241] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/28/2023]
Abstract
We demonstrate the application of a type II Al(x)Ga((1-x))As/AlAs multiple quantum well as a fast saturable absorber in a hybridly mode-locked dye laser. Type II multiple quantum wells are promising for this application because of the fast recovery of the saturated absorption with picosecond or even subpicosecond time constants. We obtain almost transform-limited pulses as short as 0.9 psec for a type II sample with a recovery time of 2.3 psec.
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Young JF, Charbonneau S, Coleridge PT. Determination of Xz-Xx,y energy separation and intervalley relaxation times in type-II AlxGa1-xAs/AlAs multiple quantum wells. PHYSICAL REVIEW. B, CONDENSED MATTER 1990; 42:11434-11437. [PMID: 9995449 DOI: 10.1103/physrevb.42.11434] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.0] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
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Andreani LC, Pasquarello A. Accurate theory of excitons in GaAs-Ga1-xAlxAs quantum wells. PHYSICAL REVIEW. B, CONDENSED MATTER 1990; 42:8928-8938. [PMID: 9995104 DOI: 10.1103/physrevb.42.8928] [Citation(s) in RCA: 164] [Impact Index Per Article: 4.8] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
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Feldmann J, Nunnenkamp J, Peter G, Göbel E, Kuhl J, Ploog K, Dawson P, Foxon CT. Experimental study of the Gamma -X electron transfer in type-II (Al,Ga)As/AlAs superlattices and multiple-quantum-well structures. PHYSICAL REVIEW. B, CONDENSED MATTER 1990; 42:5809-5821. [PMID: 9996167 DOI: 10.1103/physrevb.42.5809] [Citation(s) in RCA: 53] [Impact Index Per Article: 1.6] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
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Fraizzoli S, Pasquarello A. Binding energies of ground and excited states of shallow acceptors in GaAs/Ga1-xAlxAs quantum wells. PHYSICAL REVIEW. B, CONDENSED MATTER 1990; 42:5349-5352. [PMID: 9996106 DOI: 10.1103/physrevb.42.5349] [Citation(s) in RCA: 16] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
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Duggan G, Moore KJ, Samson B, Raukema A, Woodbridge K. Hot-exciton relaxation in (In,Ga)As-AlAs strained quantum wells. PHYSICAL REVIEW. B, CONDENSED MATTER 1990; 42:5142-5146. [PMID: 9996076 DOI: 10.1103/physrevb.42.5142] [Citation(s) in RCA: 8] [Impact Index Per Article: 0.2] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
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Humlek J, Luke F, Ploog K. Temperature dependence of the direct energy gap in a GaAs/AlAs superlattice. PHYSICAL REVIEW. B, CONDENSED MATTER 1990; 42:2932-2936. [PMID: 9995784 DOI: 10.1103/physrevb.42.2932] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.1] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
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Moore KJ, Duggan G, Woodbridge K, Roberts C, Pulsford NJ, Nicholas RJ. Evolution of the electronic states of coupled (In,Ga)As-GaAs quantum wells into superlattice minibands. PHYSICAL REVIEW. B, CONDENSED MATTER 1990; 42:3024-3029. [PMID: 9995795 DOI: 10.1103/physrevb.42.3024] [Citation(s) in RCA: 5] [Impact Index Per Article: 0.1] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
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Holtz M, Syassen K, Muralidharan R, Ploog K. Effects of wave-function delocalization on the optical properties of GaAs/AlAs short-period asymmetric superlattices. PHYSICAL REVIEW. B, CONDENSED MATTER 1990; 41:7647-7652. [PMID: 9993059 DOI: 10.1103/physrevb.41.7647] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.1] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
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Holtz M, Cingolani R, Reimann K, Muralidharan R, Syassen K, Ploog K. Electronic structure of GaAs/AlAs symmetric superlattices: A high-pressure study near the type-I-type-II crossover. PHYSICAL REVIEW. B, CONDENSED MATTER 1990; 41:3641-3646. [PMID: 9994163 DOI: 10.1103/physrevb.41.3641] [Citation(s) in RCA: 15] [Impact Index Per Article: 0.4] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
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Brozak G, Sham LJ, DeRosa F, Miceli P, Schwarz SA, Harbison JP, Florez LT, Allen SJ. Tunneling cyclotron resonance and the renormalized effective mass in semiconductor barriers. PHYSICAL REVIEW LETTERS 1990; 64:471-474. [PMID: 10041988 DOI: 10.1103/physrevlett.64.471] [Citation(s) in RCA: 15] [Impact Index Per Article: 0.4] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/23/2023]
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Li G, Jiang D, Han H, Wang Z, Ploog K. Type-I-type-II transition of GaAs/AlAs short-period superlattices investigated by photoluminescence spectroscopy under hydrostatic pressure. PHYSICAL REVIEW. B, CONDENSED MATTER 1989; 40:10430-10435. [PMID: 9991590 DOI: 10.1103/physrevb.40.10430] [Citation(s) in RCA: 19] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
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Cingolani R, Tapfer L, Zhang YH, Muralidharan R, Ploog K, Tejedor C. Spectroscopic investigation of the electronic states in narrow coupled GaAs/AlAs quantum wells with indirect band structure. PHYSICAL REVIEW. B, CONDENSED MATTER 1989; 40:8319-8326. [PMID: 9991290 DOI: 10.1103/physrevb.40.8319] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.1] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
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Cingolani R, Baldassarre L, Ferrara M, Lugar M, Ploog K. Type-I-type-II transition in ultra-short-period GaAs/AlAs superlattices. PHYSICAL REVIEW. B, CONDENSED MATTER 1989; 40:6101-6107. [PMID: 9992677 DOI: 10.1103/physrevb.40.6101] [Citation(s) in RCA: 21] [Impact Index Per Article: 0.6] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
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Lu YT, Sham LJ. Valley-mixing effects in short-period superlattices. PHYSICAL REVIEW. B, CONDENSED MATTER 1989; 40:5567-5578. [PMID: 9992591 DOI: 10.1103/physrevb.40.5567] [Citation(s) in RCA: 59] [Impact Index Per Article: 1.7] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
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Brown LD, Jaros M, Wolford DJ. Splitting of the states derived from the bulk X minima in GaAs-AlAs superlattices. PHYSICAL REVIEW. B, CONDENSED MATTER 1989; 40:6413-6416. [PMID: 9992718 DOI: 10.1103/physrevb.40.6413] [Citation(s) in RCA: 9] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
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Brown LD, Jaros M, Herbert DC. Large intersubband infrared transitions in GaAs-Ga1-xAlxAs superlattices. PHYSICAL REVIEW. B, CONDENSED MATTER 1989; 40:1616-1619. [PMID: 9992017 DOI: 10.1103/physrevb.40.1616] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
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Cosman EC, Dawson P, Moore KJ, Foxon CT. Order of the X conduction-band valleys in type-II GaAs/AlAs quantum wells. PHYSICAL REVIEW. B, CONDENSED MATTER 1989; 39:13426-13433. [PMID: 9948245 DOI: 10.1103/physrevb.39.13426] [Citation(s) in RCA: 60] [Impact Index Per Article: 1.7] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
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Skolnick MS, Smith GW, Spain IL, Whitehouse CR, Herbert DC, Whittaker DM, Reed LJ. Phonon coupling and X- Gamma mixing in GaAs-AlAs short-period superlattices. PHYSICAL REVIEW. B, CONDENSED MATTER 1989; 39:11191-11194. [PMID: 9947944 DOI: 10.1103/physrevb.39.11191] [Citation(s) in RCA: 30] [Impact Index Per Article: 0.9] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
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Feldmann J, Sattmann R, Göbel EO, Kuhl J, Hebling J, Ploog K, Muralidharan R, Dawson P, Foxon CT. Subpicosecond real-space charge transfer in type-II GaAs/AlAs superlattices. PHYSICAL REVIEW LETTERS 1989; 62:1892-1895. [PMID: 10039797 DOI: 10.1103/physrevlett.62.1892] [Citation(s) in RCA: 24] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/23/2023]
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Salmassi BR, Bauer GE. Exchange interaction in type-II quantum wells. PHYSICAL REVIEW. B, CONDENSED MATTER 1989; 39:1970-1972. [PMID: 9948426 DOI: 10.1103/physrevb.39.1970] [Citation(s) in RCA: 15] [Impact Index Per Article: 0.4] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
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Bauer GE, Ando T. Exciton mixing in quantum wells. PHYSICAL REVIEW. B, CONDENSED MATTER 1988; 38:6015-6030. [PMID: 9947061 DOI: 10.1103/physrevb.38.6015] [Citation(s) in RCA: 78] [Impact Index Per Article: 2.2] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
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