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For: Xu X, Okumura A, Morimoto A, Kumeda M, Shimizu T. Thermally induced metastable defects in hydrogenated amorphous silicon and silicon-carbon alloy films. Phys Rev B Condens Matter 1988;38:8371-8376. [PMID: 9945594 DOI: 10.1103/physrevb.38.8371] [Citation(s) in RCA: 14] [Impact Index Per Article: 0.4] [Reference Citation Analysis] [What about the content of this article? (0)] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/11/2023]
Number Cited by Other Article(s)
1
Schumm G, Bauer GH. Thermodynamical equilibrium gap-state distribution in undoped a-Si: H. ACTA ACUST UNITED AC 2006. [DOI: 10.1080/13642819108215274] [Citation(s) in RCA: 35] [Impact Index Per Article: 1.9] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 10/23/2022]
2
Stutzmann M. The defect density in amorphous silicon. ACTA ACUST UNITED AC 2006. [DOI: 10.1080/13642818908205926] [Citation(s) in RCA: 232] [Impact Index Per Article: 12.9] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 10/23/2022]
3
Thèye ML, Chahed L, Cabarrocas PRI, Zellama K. Studies by photothermal deflection spectroscopy of defect formation in a-Si:H. ACTA ACUST UNITED AC 2006. [DOI: 10.1080/01418639108224435] [Citation(s) in RCA: 15] [Impact Index Per Article: 0.8] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 10/23/2022]
4
Meaudre R, Meaudre M, Chanel J. Temperature dependence of the dc conductivity of undoped a-Si1-xGex:H alloys: Influence of metastability. PHYSICAL REVIEW. B, CONDENSED MATTER 1991;43:9792-9798. [PMID: 9996680 DOI: 10.1103/physrevb.43.9792] [Citation(s) in RCA: 8] [Impact Index Per Article: 0.2] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 11/07/2022]
5
Zafar S, Schiff EA. Hydrogen and defects in amorphous silicon. PHYSICAL REVIEW LETTERS 1991;66:1493-1496. [PMID: 10043223 DOI: 10.1103/physrevlett.66.1493] [Citation(s) in RCA: 9] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/23/2023]
6
Winer K. Defect formation in a-Si:H. PHYSICAL REVIEW. B, CONDENSED MATTER 1990;41:12150-12161. [PMID: 9993670 DOI: 10.1103/physrevb.41.12150] [Citation(s) in RCA: 47] [Impact Index Per Article: 1.4] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
7
Xu X, Sasaki H, Morimoto A, Kumeda M, Shimizu T. Thermal-equilibrium defects in undoped hydrogenated amorphous silicon, silicon-carbon, and silicon-nitrogen. PHYSICAL REVIEW. B, CONDENSED MATTER 1990;41:10049-10057. [PMID: 9993389 DOI: 10.1103/physrevb.41.10049] [Citation(s) in RCA: 8] [Impact Index Per Article: 0.2] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
8
Winer K, Jackson WB. Universal dopant and defect equilibration kinetics in n-type a-Si:H. PHYSICAL REVIEW. B, CONDENSED MATTER 1989;40:12558-12561. [PMID: 9991902 DOI: 10.1103/physrevb.40.12558] [Citation(s) in RCA: 4] [Impact Index Per Article: 0.1] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
9
Street RA, Winer K. Defect equilibria in undoped a-Si:H. PHYSICAL REVIEW. B, CONDENSED MATTER 1989;40:6236-6249. [PMID: 9992692 DOI: 10.1103/physrevb.40.6236] [Citation(s) in RCA: 114] [Impact Index Per Article: 3.3] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
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