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For: Branz HM. Dangling bonds in doped amorphous silicon: Equilibrium, relaxation, and transition energies. Phys Rev B Condens Matter 1989;39:5107-5115. [PMID: 9948899 DOI: 10.1103/physrevb.39.5107] [Citation(s) in RCA: 16] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [What about the content of this article? (0)] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]

For:	Branz HM. Dangling bonds in doped amorphous silicon: Equilibrium, relaxation, and transition energies. Phys Rev B Condens Matter 1989;39:5107-5115. [PMID: 9948899 DOI: 10.1103/physrevb.39.5107] [Citation(s) in RCA: 16] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [What about the content of this article? (0)] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]

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Cited by Other Article(s)

Pierz K, Fuhs W, Mell H. On the mechanism of doping and defect formation in a-Si: H. ACTA ACUST UNITED AC 2006. [DOI: 10.1080/01418639108224434] [Citation(s) in RCA: 75] [Impact Index Per Article: 4.2] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 10/23/2022]

Carlen MW, Xu Y, Crandall RS. Observation of slow dangling-bond relaxation in p-type hydrogenated amorphous silicon. PHYSICAL REVIEW. B, CONDENSED MATTER 1995;51:2173-2179. [PMID: 9978964 DOI: 10.1103/physrevb.51.2173] [Citation(s) in RCA: 12] [Impact Index Per Article: 0.4] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]

Yoon JH, Lee YZ, Park HR. Thermal relaxation of the deposition-induced nonequilibrium state and steady-state defect density in hydrogenated amorphous silicon. PHYSICAL REVIEW. B, CONDENSED MATTER 1994;49:10303-10306. [PMID: 10009850 DOI: 10.1103/physrevb.49.10303] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]

Branz HM, Schiff EA. Dangling-bond relaxation and deep-level measurements in hydrogenated amorphous silicon. PHYSICAL REVIEW. B, CONDENSED MATTER 1993;48:8667-8671. [PMID: 10007080 DOI: 10.1103/physrevb.48.8667] [Citation(s) in RCA: 19] [Impact Index Per Article: 0.6] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]

Balberg I, Lubianiker Y. Evidence for the defect-pool model from induced recombination level shifts in undoped a-Si:H. PHYSICAL REVIEW. B, CONDENSED MATTER 1993;48:8709-8714. [PMID: 10007085 DOI: 10.1103/physrevb.48.8709] [Citation(s) in RCA: 11] [Impact Index Per Article: 0.4] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]

Zhong F, Cohen JD. Measured and calculated distributions of deep defect states in hydrogenated amorphous silicon: Verification of deep defect relaxation dynamics. PHYSICAL REVIEW LETTERS 1993;71:597-600. [PMID: 10055316 DOI: 10.1103/physrevlett.71.597] [Citation(s) in RCA: 5] [Impact Index Per Article: 0.2] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/23/2023]

Chen L, Tauc J, Lee J, Schiff EA. Defects in hydrogenated amorphous silicon-germanium alloys studied by photomodulation spectroscopy. PHYSICAL REVIEW. B, CONDENSED MATTER 1991;43:11694-11702. [PMID: 9996940 DOI: 10.1103/physrevb.43.11694] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]

Crandall RS. Defect relaxation in amorphous silicon: Stretched exponentials, the Meyer-Neldel rule, and the Staebler-Wronski effect. PHYSICAL REVIEW. B, CONDENSED MATTER 1991;43:4057-4070. [PMID: 9997755 DOI: 10.1103/physrevb.43.4057] [Citation(s) in RCA: 71] [Impact Index Per Article: 2.2] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]

Branz HM, Silver M. Potential fluctuations due to inhomogeneity in hydrogenated amorphous silicon and the resulting charged dangling-bond defects. PHYSICAL REVIEW. B, CONDENSED MATTER 1990;42:7420-7428. [PMID: 9994885 DOI: 10.1103/physrevb.42.7420] [Citation(s) in RCA: 54] [Impact Index Per Article: 1.6] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]

Branz HM. Comment on "Excitation-energy dependence of optically induced ESR in a-Si:H". PHYSICAL REVIEW. B, CONDENSED MATTER 1990;41:7887-7890. [PMID: 9993094 DOI: 10.1103/physrevb.41.7887] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.1] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]

Jackson WB. Role of band-tail carriers in metastable defect formation and annealing in hydrogenated amorphous silicon. PHYSICAL REVIEW. B, CONDENSED MATTER 1990;41:1059-1075. [PMID: 9993803 DOI: 10.1103/physrevb.41.1059] [Citation(s) in RCA: 36] [Impact Index Per Article: 1.1] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]

Defect equilibrium thermodynamics in hydrogenated amorphous silicon: Consequences for solar cells. ACTA ACUST UNITED AC 1989. [DOI: 10.1016/0379-6787(89)90025-2] [Citation(s) in RCA: 22] [Impact Index Per Article: 0.6] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/20/2022]