Empirical relation between gate voltage and electrostatic potential in the one-dimensional electron gas of a split-gate device

Electrical observation of sub-band formation in SnO2 nanobelts

The electrical observation of energy sub-band formation in the electronic structure, that gives rise to the phenomenon of quantized transport is reported in tin oxide (SnO2) nanobelt back-gate field-effect transistors, at low temperatures. Sub-band formation was observed as current oscillations in the drain current vs. gate voltage characteristics, and was analyzed considering the nanobelt as a "quantum wire" with a rectangular cross-section and hard walls. The lateral quantum confinement in the nanowires created conditions for the successive filling of the first twelve electron energy sub-bands, as the gate voltage increases. When the source-drain voltage is changed, the oscillations are not dislocated with respect to the gate voltage indicating flat-band energies, and that the observations are incompatible with the phenomena of Coulomb blockade and tunnelling oscillations. The separation of the energy sub-bands was found to be in good agreement with the measured cross-section dimensions of the nanobelt and with the threshold temperature, since for T > 60 K the oscillations tend to vanish.

Quantized conductance in an InSb nanowire

Ballistic one-dimensional transport in semiconductor nanowires plays a central role in creating topological and helical states. The hallmark of such one-dimensional transport is conductance quantization. Here we show conductance quantization in InSb nanowires at nonzero magnetic fields. Conductance plateaus are studied as a function of source-drain bias and magnetic field, enabling extraction of the Landé g factor and the subband spacing.