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Abstract
ABSTRACTThis paper reviews the diverse methods used to achieve doping during MBE of Si and SiGe, and the incorporation processes involved. The optimum choice of dopant and methodology depends on the most appropriate growth conditions for a given structure. At growth temperatures exceeding 750°C, Potential Enhanced n-type doping of coevaporated Sb is capable of achieving high resolution structures, at doping levels up to mid-1019 cm−3. At lower temperatures, such as those most suited to SiGe growth, Sb-doping becomes a formidable challenge, due to the high accumulated equilibrium coverages required. Low energy ion implantation appears to be the favoured route for good control, p-type B-doping can readily be achieved by coevaporation of compounds or, to avoid oxygen incorporation at low temperatures, the element. A “designer” chart for B-doping of Si is presented.
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Spencer GS, Menéndez J, Pfeiffer LN, West KW. Optical-phonon Raman-scattering study of short-period GaAs-AlAs superlattices: An examination of interface disorder. PHYSICAL REVIEW. B, CONDENSED MATTER 1995; 52:8205-8218. [PMID: 9979819 DOI: 10.1103/physrevb.52.8205] [Citation(s) in RCA: 11] [Impact Index Per Article: 0.4] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
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Tsai CJ, Vreeland T, Atwater HA. Defect formation and diffusion mechanism in ion-assisted molecular-beam epitaxy. PHYSICAL REVIEW. B, CONDENSED MATTER 1992; 46:7103-7109. [PMID: 10002416 DOI: 10.1103/physrevb.46.7103] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.0] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
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Ni W, Hansson GV, Sundgren J, Hultman L, Wallenberg LR, Yao J, Markert LC, Greene JE. delta -function-shaped Sb-doping profiles in Si(001) obtained using a low-energy accelerated-ion source during molecular-beam epitaxy. PHYSICAL REVIEW. B, CONDENSED MATTER 1992; 46:7551-7558. [PMID: 10002494 DOI: 10.1103/physrevb.46.7551] [Citation(s) in RCA: 14] [Impact Index Per Article: 0.4] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
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Kramer B, Tomasch G, Greene JE, Salvati L, Barr TL, Ray MA. High-resolution (GaAs)1-x(Ge2)x x-ray photoelectron valence-band spectra: Implications for proposed electronic and structural models. PHYSICAL REVIEW. B, CONDENSED MATTER 1992; 46:1372-1376. [PMID: 10003778 DOI: 10.1103/physrevb.46.1372] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.0] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
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Lin D, Hirschorn ES, Chiang T, Tsu R, Lubben D, Greene JE. Scanning-tunneling-microscopy studies of disilane adsorption and pyrolytic growth on Si(100)-(2x1). PHYSICAL REVIEW. B, CONDENSED MATTER 1992; 45:3494-3498. [PMID: 10001926 DOI: 10.1103/physrevb.45.3494] [Citation(s) in RCA: 31] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
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Ni WX, Hansson GV. Band offsets in pseudomorphically grown Si/Si1-xGex heterostructures studied with core-level x-ray photoelectron spectroscopy. PHYSICAL REVIEW. B, CONDENSED MATTER 1990; 42:3030-3037. [PMID: 9995796 DOI: 10.1103/physrevb.42.3030] [Citation(s) in RCA: 8] [Impact Index Per Article: 0.2] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
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