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Citation(s) in
RCA
10
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For:
Hull R
, Bean JC, Werder DJ, Leibenguth RE.
Activation barriers to strain relaxation in lattice-mismatched epitaxy.
Phys Rev B Condens Matter
1989;
40
:1681-1684. [PMID:
9992025
DOI:
10.1103/physrevb.40.1681
]
[
Citation(s) in
RCA
: 26
]
[
Impact Index Per Article: 0.7
]
[
Reference Citation Analysis
]
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[Indexed: 04/12/2023]
Number
Cited by Other Article(s)
1
Hull R
, Bean J, Bonar J, Peticolas L. Strain Relaxation Mechanisms in Lattice Mismatched Epitaxy.
ACTA ACUST UNITED AC
2011. [DOI:
10.1557/proc-198-459
]
[
Citation(s) in
RCA
: 2
]
[
Impact Index Per Article: 0.2
]
[
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[Indexed: 11/13/2022]
Abstract
ABSTRACT
The relaxation of strained epitaxial layers by the introduction of misfit dislocations is reviewed. Current theoretical and experimental understanding of the nucleation, propagation and interaction of misfit dislocations are summarized. The ramifications for applicability of strained layer epitaxy to practical device structures are discussed.
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2
Fischer A
, Kühne H, Eichler M, Holländer F, Richter H. Strain and surface phenomena in SiGe structures.
PHYSICAL REVIEW. B, CONDENSED MATTER
1996;
54
:8761-8768. [PMID:
9984556
DOI:
10.1103/physrevb.54.8761
]
[
Citation(s) in
RCA
: 6
]
[
Impact Index Per Article: 0.2
]
[
Reference Citation Analysis
]
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[Indexed: 04/12/2023]
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3
Fischer A
, Kühne H, Richter H. New approach in equilibrium theory for strained layer relaxation.
PHYSICAL REVIEW LETTERS
1994;
73
:2712-2715. [PMID:
10057173
DOI:
10.1103/physrevlett.73.2712
]
[
Citation(s) in
RCA
: 9
]
[
Impact Index Per Article: 0.3
]
[
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]
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[Indexed: 05/23/2023]
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4
LeGoues FK
, Mooney PM, Tersoff J. Measurement of the activation barrier to nucleation of dislocations in thin films.
PHYSICAL REVIEW LETTERS
1993;
71
:396-399. [PMID:
10055260
DOI:
10.1103/physrevlett.71.396
]
[
Citation(s) in
RCA
: 3
]
[
Impact Index Per Article: 0.1
]
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[Indexed: 05/23/2023]
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5
Snyder CW
, Mansfield JF, Orr BG. Kinetically controlled critical thickness for coherent islanding and thick highly strained pseudomorphic films of InxGa1-xAs on GaAs(100).
PHYSICAL REVIEW. B, CONDENSED MATTER
1992;
46
:9551-9554. [PMID:
10002764
DOI:
10.1103/physrevb.46.9551
]
[
Citation(s) in
RCA
: 53
]
[
Impact Index Per Article: 1.7
]
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[Indexed: 04/12/2023]
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6
Holländer B
, Butz R, Mantl S. Interdiffusion and thermally induced strain relaxation in strained Si1-xGex/Si superlattices.
PHYSICAL REVIEW. B, CONDENSED MATTER
1992;
46
:6975-6981. [PMID:
10002403
DOI:
10.1103/physrevb.46.6975
]
[
Citation(s) in
RCA
: 13
]
[
Impact Index Per Article: 0.4
]
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[Indexed: 04/12/2023]
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7
Freund L
. Dislocation interactions in relaxation of a strained epitaxial layer.
ACTA ACUST UNITED AC
1992. [DOI:
10.1016/0956-716x(92)90486-x
]
[
Citation(s) in
RCA
: 6
]
[
Impact Index Per Article: 0.2
]
[
Reference Citation Analysis
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[Indexed: 10/27/2022]
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8
Capano MA
. Multiplication of dislocations in Si1-xGex layers on Si(001).
PHYSICAL REVIEW. B, CONDENSED MATTER
1992;
45
:11768-11774. [PMID:
10001191
DOI:
10.1103/physrevb.45.11768
]
[
Citation(s) in
RCA
: 8
]
[
Impact Index Per Article: 0.3
]
[
Reference Citation Analysis
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[Indexed: 04/12/2023]
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9
Lowe W
, MacHarrie RA, Bean JC, Peticolas L, Clarke R, Brizard C, Rodricks B. Real-time x-ray diffraction observation of a pin-slip mechanism in GexSi1-x strained layers.
PHYSICAL REVIEW LETTERS
1991;
67
:2513-2516. [PMID:
10044445
DOI:
10.1103/physrevlett.67.2513
]
[
Citation(s) in
RCA
: 1
]
[
Impact Index Per Article: 0.0
]
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[Indexed: 05/23/2023]
Abstract
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10
LeGoues FK
, Meyerson BS, Morar JF. Anomalous strain relaxation in SiGe thin films and superlattices.
PHYSICAL REVIEW LETTERS
1991;
66
:2903-2906. [PMID:
10043649
DOI:
10.1103/physrevlett.66.2903
]
[
Citation(s) in
RCA
: 23
]
[
Impact Index Per Article: 0.7
]
[
Reference Citation Analysis
]
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[Indexed: 05/23/2023]
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