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For: Aldao CM, Vitomirov IM, Xu F, Weaver JH. Disruption, atom distributions, and energy levels for Ge/GaAs(110), Ge/InP(110), and Ge/InSb(110) heterojunctions. Phys Rev B Condens Matter 1989;40:3711-3719. [PMID: 9992341 DOI: 10.1103/physrevb.40.3711] [Citation(s) in RCA: 5] [Impact Index Per Article: 0.1] [Reference Citation Analysis] [What about the content of this article? (0)] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
Number Cited by Other Article(s)
1
Yu X, Raisanen A, Haugstad G, Troullier N, Biasiol G, Franciosi A. Nonmagnetic-semimagnetic semiconductor heterostructures: Ge-Cd1-xMnxTe(110). PHYSICAL REVIEW. B, CONDENSED MATTER 1993;48:4545-4551. [PMID: 10008933 DOI: 10.1103/physrevb.48.4545] [Citation(s) in RCA: 9] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 11/07/2022]
2
Aldao CM, Vitomirov IM, Waddill GD, Weaver JH. Effects of growth temperature on atom distributions, Fermi-level positions, and valence-band offsets for Ge/n-type InP(110) heterojunctions. PHYSICAL REVIEW. B, CONDENSED MATTER 1991;43:13952-13956. [PMID: 9997262 DOI: 10.1103/physrevb.43.13952] [Citation(s) in RCA: 4] [Impact Index Per Article: 0.1] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
3
Whitman LJ, Stroscio JA, Dragoset RA, Celotta RJ. Scanning-tunneling-microscopy study of InSb(110). PHYSICAL REVIEW. B, CONDENSED MATTER 1990;42:7288-7291. [PMID: 9994868 DOI: 10.1103/physrevb.42.7288] [Citation(s) in RCA: 27] [Impact Index Per Article: 0.8] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
4
Jost MB, Wagener TJ, Hu Y, Weaver JH. Ga 3d excitons at surfaces and interfaces. PHYSICAL REVIEW. B, CONDENSED MATTER 1990;42:2937-2940. [PMID: 9995785 DOI: 10.1103/physrevb.42.2937] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.0] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
5
Yu X, Raisanen A, Haugstad G, Ceccone G, Troullier N, Franciosi A. Low-temperature photoemission measurements of valence-band discontinuities at buried heterojunctions. PHYSICAL REVIEW. B, CONDENSED MATTER 1990;42:1872-1875. [PMID: 9995627 DOI: 10.1103/physrevb.42.1872] [Citation(s) in RCA: 7] [Impact Index Per Article: 0.2] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
6
Hu Y, Wagener TJ, Jost MB, Weaver JH. Epitaxial Sn and Bi on GaAs(110): Inverse photoemission, shallow core-hole emission, and Ga 3d excitons. PHYSICAL REVIEW. B, CONDENSED MATTER 1990;41:5817-5824. [PMID: 9994466 DOI: 10.1103/physrevb.41.5817] [Citation(s) in RCA: 6] [Impact Index Per Article: 0.2] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
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